Features
• Complementary Pair
• Epitaxial Planar Die Construction
• One 22
22A Type (NPN),
One 2907A Type (PNP)
• Ideal for Lo
• Lead Free
• "Gree
w Power Amplification and Switching
By Design/RoHS Compliant (Note 2)
n Device" (Note 3)
Mechanical Data
• Case: SOT-26
• Case Material: M
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminals: Finish - Matte Tin a
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Conn
• Orde
NEW PRODUCT
• Marking Informat
ring & Date Code Information: See Page 6
• Weight: 0.006 gr
olded Plastic, “Green” Molding
ections: See Diagram
ion: See Page 6
ams (approximate)
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
: Level 1 per J-STD-020C
nnealed over Copper
A
K
J
E
C
1
1
E2B
B
1
H
D
C
2
C
B
2
M
L
F
Note: E1, B1, and C1 = 2222A Type (NPN)
E2, B2, and C2 = 2907A Type (PNP)
T
e marking indicates orientation
C
E
C
1
2
1
DMB2227A
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D – – 0.95
F – – 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°
α
All Dimensi mm ons in
–
Maximum Ratings: 2222A Type (NPN) @T
Characteristic Symbol 2222A (NPN) Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Maximum Ratings: 2907A Type (PNP) @T
Characteristic Symbol 2907A (PNP) Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Maximum Ratings: Total @T
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
DS31217 Rev. 4 - 2 1 of 6
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
= 25°C unless otherwise specified
A
B
2E2B1
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
C
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
C
P
D
R
JA
θ
T
, T
j
STG
www
.diodes.com
75 V
40 V
6.0 V
600 mA
-60 V
-60 V
-5.0 V
-600 mA
300 mW
417
-55 to +150
°C/W
°C
DMB2227A
© Diodes Incorporated
Electrical Characteristics: 2222A Type (NPN) @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 4. Pulse test: pulse width ≤300μS, duty cycle ≤2%.
DS31217 Rev. 4 - 2 2 of 6
Characteristic Symbol Min Max Unit Test Condition
www.diodes.com
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
h
V
CE(SAT)
V
BE(SAT)
C
C
BL
FE
obo
ibo
f
T
t
d
t
t
t
= 25°C unless otherwise specified
A
75
40
6.0
⎯
⎯
⎯
⎯
35
50
75
100
40
50
35
⎯
0.6
⎯
⎯
⎯
⎯
⎯
10
10 nA
10 nA
20 nA
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
8 pF
— 25 pF
300
⎯
r
s
f
⎯
⎯
⎯
⎯
10 ns
25 ns
225 ns
60 ns
V
I
= 10μA, IE = 0
C
V
I
= 10mA, IB = 0
C
V
I
= 10μA, IC = 0
E
nA
μA
⎯
V
V
= 60V, IE = 0
V
CB
V
= 60V, IE = 0, TA = 150°C
CB
V
= 60V, V
CE
V
= 3.0V, IC = 0
EB
V
= 60V, V
CE
= 100μA, V
I
C
= 1.0mA, VCE = 10V
I
C
I
= 10mA, VCE = 10V
C
= 150mA, V
I
C
I
= 500mA, VCE = 10V
C
= 10mA, VCE = 10V, TA = -55°C
I
C
I
= 150mA, VCE = 1.0V
C
= 150mA, IB = 15mA
I
C
= 500mA, IB = 50mA
I
C
= 150mA, IB = 15mA
I
C
= 500mA, IB = 50mA
I
C
VCB = 10V, f = 1.0MHz, IE = 0
V
= 0.5V, f = 1.0MHz, IC = 0
EB
= 20V, IC = 20mA,
V
MHz
CE
f = 100MHz
V
= 30V, IC = 150mA,
CC
V
= - 0.5V, IB1 = 15mA
BE(off)
V
= 30V, IC = 150mA,
CC
= IB2 = 15mA
I
B1
EB(OFF)
EB(OFF)
= 10V
CE
= 10V
CE
= 3.0V
= 3.0V
DMB2227A
© Diodes Incorporated