Diodes DLD101 User Manual

Features

• Primarily Designed for Driving LED/s for Illumination, Signage
and Backlighting Applications

• Ideally Suited for Linear Mode Constant Current Applications

• V

• Includes:

• High Voltage Capable (50V)

• Small Form Factor Surface Mount Package

• High Dissipation Capability

• Low Thermal Resistance

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

Referenced Current Sink Circuit

BE

• N-Channel Enhancement Mode MOSFET (Q1)

• Base Accessible Pre-Biased Transistor (Q2)

S2 B1 B1’ E1

8

Q1

76

R1

5

R2

Q2

23

1

4

D2 G2 NC C1

Top View

Internal Schematic

Mechanical Data

• Case: DFN3030D-8

• Case Material: Molded Plastic, "Green" Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — NiPdAu over Copper leadframe. Solderable

• Marking Information: See Page 7

• Ordering Information: See Page 7

• Weight: 0.0172 grams (approximate)

S2 B1 B1’ E1

8765

1234

D2 G2 NC C1

Package Pin-Out Configuration

Top View

DLD101

LINEAR MODE CURRENT SINK LED DRIVER

UL Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

V Supply

CC

R

C

34

2

C

Q2

E

5

GD

B

R2

R1

6

7

Typical Application Circuit for Linear

LED St ring

1

V

DS

Q1

S

8

Option 3
Option 2

Option 1

R

S

Mode Current Sink LED Driver

Option 3:

V

BE

≈

I

LED

R

S

Options 1 & 2:

1.1V

I

≈

LED

R

Option 2:
Capacitor is across R2 for
better no ise performance.

BE

S

Maximum Ratings: (Q1) @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 3) TA = 25°C
T

= 70°C

A

Drain Current (Note 3) Pulsed
Body-Diode Continuous Current (Note 3)

V

DSS

V

GSS

I

D

I

DM

I

S

100 V
±20

1.0

0.8

3.0 A

1.0 A

Maximum Ratings: (Q2) @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current (DC)

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DLD101

Document number: DS32007 Rev. 8 - 2

1 of 9

www.diodes.com

V

CC

V

IN

I

O

50 V

-5 to +30 V
100 mA

V
A

April 2010

© Diodes Incorporated

)

g

g

g

)

r

)

)

)

)

)

Thermal Characteristics – Total Device

Characteristic Symbol Value Unit

Power Dissipation @TA = 25°C PD

Thermal Resistance Junction to Ambient @TA = 25°C
Thermal Resistance Junction to Case @TA = 25°C

Operating and Storage Temperature Range

Notes: 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6).

4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated.

Electrical Characteristics: (Q1) @T

NEW PRODUCT

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated.

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

100

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Diode Forward Voltage

V

GS(th

R

DS (ON)

g

⎯

fs

V

SD

⎯

⎯

2.0

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯

iss

C

⎯

oss

C

⎯

rss

SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Q

⎯

Q

⎯

s

Q

⎯

d

t

d(on

t

t

d(off

t

f

⎯

⎯

⎯

⎯

R

JA

θ

R

JC

θ

T

, T

J

STG

⎯ ⎯

⎯

⎯

⎯

0.9

0.89 1.1 V

129

14

8

3.4

0.9
1

7.9

11.4

14.3

9.6

0.7 (Note 3)

0.9 (Note 4)

1.4 (Note 5)

See Figure 1

(Notes 3, 4, & 5)

See Figure 2

(Notes 3, 4, & 5)

-55 to +150

V

1

±100

μA

nA

4.1 V

0.85

0.99

⎯

⎯
⎯
⎯

Ω

S

pF
pF
pF

⎯

⎯

nC

⎯
⎯

⎯

⎯

ns

⎯

V

= 0V, ID = 250μA

GS

= 60V, VGS = 0V

V

DS

V

= ±20V, VDS = 0V

GS

V

= VGS, ID = 250μA

DS

= 10V, ID = 1.5A

V

GS

V

= 6V, ID = 1A

GS

V

= 15V, ID = 1A

DS

VGS = 0V, IS = 1.5A

= 50V, VGS = 0V

V

DS

f = 1.0MHz

= 50V, VGS = 10V, ID = 1A

V

DS

V

= 50V, VDS = 10V,

GS

= 1A, RG ≈ 6Ω

I

D

DLD101

W

°C/W
°C/W

°C

Electrical Characteristics: (Q2) @T

= 25°C unless otherwise specified

A

Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition

V

Input Voltage
Output Voltage

Output Current
DC Current Gain
Input Resistance
Resistance Ratio

Transition Frequency

Notes: 6. Short duration pulse test used to minimize self-hea ting effect.

V

V

I

R

I(off
I(on

O(on

O(off

G
R

2/R1

f

1
1

T

0.4 - - V

- - 1.5 V

- 0.05 0.3 V

- - 0.5

80 - - -

3.2 4.7 6.2 kΩ ­8 10 12 - -

- 260 - MHz

VCC = 5V, IO = 100μA
VCC = 0.3V, IO = 5mA
IO/II = 5mA/0.25mA

μA

VCC = 50V, VI = 0V
VO = 5V, IO = 10mA

= 10V, IE = 5mA,

V

CE

f = 100MHz

DLD101

Document number: DS32007 Rev. 8 - 2

2 of 9

www.diodes.com

April 2010

© Diodes Incorporated

R

R

R

P

P

OWER

PATIO

N

NEW PRODUCT

DLD101

Thermal Characteristics

180
160

T = 25°C

A

140
120

100

80
60

JA

40

θ

R , THERMAL RESISTANCE,

JUNCTION TO AMBIENT AIR (°C/W)

20

0

0 5 10 15 20 25 30 35 40

COPPER AREA (mm )

2

Fig. 1 Thermal Resistance, Junction to

Ambient Ai r Charac ter ist ic

1.6

40

35

T = 25°C

A

30

25

ESISTANCE,

20

MAL

15

, THE

10

JC

θ

JUNCTION TO CASE AIR (°C/W)

5
0

0 5 10 15 20 25 30 35 40

COPPER AREA (mm )

2

Fig. 2 Thermal Resistance, Junction to

Case Air Characteristic

1.4

1.2

(W)

T = 25°C

A

1.0

0.8

DISSI

0.6

,

0.4

D

0.2

0

0 5 10 15 20 25 30 35 40

COPPER AREA (mm )

2

Fig. 3 Power Dissipation Characteristic

DLD101

Document number: DS32007 Rev. 8 - 2

3 of 9

www.diodes.com

April 2010

© Diodes Incorporated