Diodes DLD101 User Manual

Features

• Primarily Designed for Driving LED/s for Illumination, Signage
and Backlighting Applications

• Ideally Suited for Linear Mode Constant Current Applications

• V

• Includes:

• High Voltage Capable (50V)

• Small Form Factor Surface Mount Package

• High Dissipation Capability

• Low Thermal Resistance

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

Referenced Current Sink Circuit

BE

• N-Channel Enhancement Mode MOSFET (Q1)

• Base Accessible Pre-Biased Transistor (Q2)

S2 B1 B1’ E1

8

Q1

76

R1

5

R2

Q2

23

1

4

D2 G2 NC C1

Top View

Internal Schematic

Mechanical Data

• Case: DFN3030D-8

• Case Material: Molded Plastic, "Green" Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — NiPdAu over Copper leadframe. Solderable

• Marking Information: See Page 7

• Ordering Information: See Page 7

• Weight: 0.0172 grams (approximate)

S2 B1 B1’ E1

8765

1234

D2 G2 NC C1

Package Pin-Out Configuration

Top View

DLD101

LINEAR MODE CURRENT SINK LED DRIVER

UL Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

V Supply

CC

R

C

34

2

C

Q2

E

5

GD

B

R2

R1

6

7

Typical Application Circuit for Linear

LED St ring

1

V

DS

Q1

S

8

Option 3
Option 2

Option 1

R

S

Mode Current Sink LED Driver

Option 3:

V

BE

≈

I

LED

R

S

Options 1 & 2:

1.1V

I

≈

LED

R

Option 2:
Capacitor is across R2 for
better no ise performance.

BE

S

Maximum Ratings: (Q1) @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 3) TA = 25°C
T

= 70°C

A

Drain Current (Note 3) Pulsed
Body-Diode Continuous Current (Note 3)

V

DSS

V

GSS

I

D

I

DM

I

S

100 V
±20

1.0

0.8

3.0 A

1.0 A

Maximum Ratings: (Q2) @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current (DC)

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DLD101

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V

CC

V

IN

I

O

50 V

-5 to +30 V
100 mA

V
A

April 2010

© Diodes Incorporated

)

g

g

g

)

r

)

)

)

)

)

Thermal Characteristics – Total Device

Characteristic Symbol Value Unit

Power Dissipation @TA = 25°C PD

Thermal Resistance Junction to Ambient @TA = 25°C
Thermal Resistance Junction to Case @TA = 25°C

Operating and Storage Temperature Range

Notes: 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6).

4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated.

Electrical Characteristics: (Q1) @T

NEW PRODUCT

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated.

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

I

⎯ ⎯

DSS

I

⎯ ⎯

GSS

100

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Diode Forward Voltage

V

GS(th

R

DS (ON)

g

⎯

fs

V

SD

⎯

⎯

2.0

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯

iss

C

⎯

oss

C

⎯

rss

SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Q

⎯

Q

⎯

s

Q

⎯

d

t

d(on

t

t

d(off

t

f

⎯

⎯

⎯

⎯

R

JA

θ

R

JC

θ

T

, T

J

STG

⎯ ⎯

⎯

⎯

⎯

0.9

0.89 1.1 V

129

14

8

3.4

0.9
1

7.9

11.4

14.3

9.6

0.7 (Note 3)

0.9 (Note 4)

1.4 (Note 5)

See Figure 1

(Notes 3, 4, & 5)

See Figure 2

(Notes 3, 4, & 5)

-55 to +150

V

1

±100

μA

nA

4.1 V

0.85

0.99

⎯

⎯
⎯
⎯

Ω

S

pF
pF
pF

⎯

⎯

nC

⎯
⎯

⎯

⎯

ns

⎯

V

= 0V, ID = 250μA

GS

= 60V, VGS = 0V

V

DS

V

= ±20V, VDS = 0V

GS

V

= VGS, ID = 250μA

DS

= 10V, ID = 1.5A

V

GS

V

= 6V, ID = 1A

GS

V

= 15V, ID = 1A

DS

VGS = 0V, IS = 1.5A

= 50V, VGS = 0V

V

DS

f = 1.0MHz

= 50V, VGS = 10V, ID = 1A

V

DS

V

= 50V, VDS = 10V,

GS

= 1A, RG ≈ 6Ω

I

D

DLD101

W

°C/W
°C/W

°C

Electrical Characteristics: (Q2) @T

= 25°C unless otherwise specified

A

Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition

V

Input Voltage
Output Voltage

Output Current
DC Current Gain
Input Resistance
Resistance Ratio

Transition Frequency

Notes: 6. Short duration pulse test used to minimize self-hea ting effect.

V

V

I

R

I(off
I(on

O(on

O(off

G
R

2/R1

f

1
1

T

0.4 - - V

- - 1.5 V

- 0.05 0.3 V

- - 0.5

80 - - -

3.2 4.7 6.2 kΩ ­8 10 12 - -

- 260 - MHz

VCC = 5V, IO = 100μA
VCC = 0.3V, IO = 5mA
IO/II = 5mA/0.25mA

μA

VCC = 50V, VI = 0V
VO = 5V, IO = 10mA

= 10V, IE = 5mA,

V

CE

f = 100MHz

DLD101

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R

R

R

P

P

OWER

PATIO

N

NEW PRODUCT

DLD101

Thermal Characteristics

180
160

T = 25°C

A

140
120

100

80
60

JA

40

θ

R , THERMAL RESISTANCE,

JUNCTION TO AMBIENT AIR (°C/W)

20

0

0 5 10 15 20 25 30 35 40

COPPER AREA (mm )

2

Fig. 1 Thermal Resistance, Junction to

Ambient Ai r Charac ter ist ic

1.6

40

35

T = 25°C

A

30

25

ESISTANCE,

20

MAL

15

, THE

10

JC

θ

JUNCTION TO CASE AIR (°C/W)

5
0

0 5 10 15 20 25 30 35 40

COPPER AREA (mm )

2

Fig. 2 Thermal Resistance, Junction to

Case Air Characteristic

1.4

1.2

(W)

T = 25°C

A

1.0

0.8

DISSI

0.6

,

0.4

D

0.2

0

0 5 10 15 20 25 30 35 40

COPPER AREA (mm )

2

Fig. 3 Power Dissipation Characteristic

DLD101

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R

C

URRENT

R

R

OUR

C

O

R

T

C

R

R

OUR

CE ON-R

TANC

5

R

R

OUR

C

NEW PRODUCT

DLD101

Q1 Typical Performance Curves

10

V = DSV

9

GS

8
7

(A)

6

T = 150°C

A

5

T = 125°C

4

AIN

3

D

I, D

2
1

0

1.5 2 2.5 3 3.5 4 4.5

1.6

Ω

E ( )

1.4

A

T = 85°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Transfer Characteristic

V = 10V

GS

T = 25°C

A

T = -55°C

A

1.2

ESIS

1.0

0.8

T = 150°C

A

T = 125°C

A

T = 85°C

A

0.6

T = 25°C

AIN-S
, D

0.4

A

T = -55°C

A

0.2

DS(ON)

0

0 0.4 0.8 1.2 1.6

I , DRAIN CURRENT (A)

D

Fig. 6 Typical On-Resistance

vs. Drain Current and Tem peratur e

1.

10

Ω

E ( )
AN

ESIS
N­E

1

V = 6V

GS

V = 10V

GS

AIN-S
, D

DS(ON)

0.1
0 0.4 0.8 1.2 1.6

I , DRAIN CURRENT (A)

D

Fig. 5 Typical On-Resistance

vs. Drain C urrent an d G at e Vol t age

3.0

2.5

2.0

V = 10V

GS

I = 1.5A

1.5

1.0

DSON

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

0.5

0

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

D

Fig. 7 On-Resistance Variation with Temperature

4.0

3.8

V = 6V

GS

I = 1A

D

1.2

E

Ω

AIN-S
, D

0.9

0.6

DSON

ON-RESISTANCE ( )

V = 6V

GS

I = 1A

D

V = 10V

I = 1.5A

GS
D

0.3

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 8 On-Resistance Variation with Temperature

DLD101

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3.6

3.4

3.2

I = 1mA

3.0

2.8

I = 250µA

D

D

2.6

2.4

GS(TH)

2.2

V , GATE THRESHOLD VOLTAGE (V)

2.0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 9 Gate Threshold Variation vs. Ambient Temperature

© Diodes Incorporated

April 2010

OUR

CE CUR

REN

T

G

CUR

R

T

C

O

C

TOR CUR

REN

T

C CUR

RENT G

NEW PRODUCT

DLD101

Q1 Typical Performance Curves - continued

1.6

1.4

1.2

(A)

1.0

T = 25°C

A

0.8

0.6

S

0.4

I, S

0.2

0

0.6 0.7 0.8 0.9 1
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 10 Source-Drain Diode Forward Voltage vs. Current

1,000

(nA)
EN

100

E

10

DSS

I , LEAKA

T = 150°C

T = 125°C

A

T = -55°C

A

A

T = 85°C

A

T = 25°C

A

1

0102030405060

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 11 Typical Leakage Current vs. Drain-Source Voltage

Q2 Typical Performance Curves

25

1,000

I = 5mA

20

(mA)

15

10

LLE

5

C

I,

0

0123 45

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 12 Typical Collector Current

vs. Collector-Emitter Voltage

B

I = 4mA

B

I = 3mA

B

I = 2mA

B

I = 1mA

B

AIN

100

FE

h, D

10

T = 150°C

T = 125°C

A

A

T = -55°C

A

T = 85°C

A

T = 25°C

A

1

0.1 1 10
I , COLLECTOR CURRENT (mA)

Fig. 13 Typical DC Current Gain vs. Collector Current

C

50

DLD101

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C

O

CTO

R

T

TER

T

TER TURN-O

O

T

G

NEW PRODUCT

DLD101

Q2 Typical Performance Curves - continued

0.7

0.6

I/I = 10

CB

0.5

-EMI

0.4

VOLTAGE (V)

LLE

0.3

0.2

SATURATION

CE(SAT)

V,

0.1

T = 125°C

A

0

T = 150°C

T = -55°C

A

A

T = 25°C

A

T = 85°C

A

110100

I , COLLECTOR CURRENT (mA)

Fig. 14 Typical Collector-Emitter Saturation Vo ltage

C

vs. Collector Current

1.0

V = 5V

0.9

CE

200

1.0

E (V)

0.9

V = 1V

0.8

0.7

0.6

CE

T = -55°C

A

T = 25°C

A

A
L

N V

0.5

T = 85°C

0.4

0.3

T = 150°C

A

T = 125°C

A

A

0.2

0.1

BE(ON)

0

V , BASE- EM I

0.1 1 10 100

Fig. 15 Base-Emitter Turn-On Voltage vs. Collector Current

I , COLLECTOR CURRENT (mA)

C

0.8

T = -55°C

A

0.7

0.6

0.5

0.4

0.3

T = 25°C

A

T = 150°C

A

T = 125°C

A

T = 85°C

A

0.2

0.1

BE(ON)

0

V , BASE-EMITTER TURN-ON VOLTAGE (V)

0.1 1 10 100

Fig. 16 Base-Emitter Turn-On Voltage vs. Collector Current

I , COLLECTOR CURRENT (mA)

C

DLD101

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Typical Application Circuit

V Supply

CC

R

C

34

2

GD

C

Q2

B

R2

E

R1

5

6

7

NEW PRODUCT

Fig. 12 Typical Application Circuit for

Linear Mode Current Sink LED Driver

Q1

1

8

S

R

S

LED S t r ing

V

DS

Option 3
Option 2

Option 1

Option 3:

V

BE

≈

I

LED

R

S

Option s 1 & 2:

1.1V

I

LED

Option 2:
Capacitor is across R2 for
bett er noise perf ormance.

BE

≈

R

S

DLD101

The DLD101 has been designed primarily for solid state lighting
applications, to be used as a current sink circuit solution for LEDs. It
features a N-channel MOSFET capable of 1A drive current and a pre­biased NPN transistor (which allows direct connection to the base, or
via a series base resistor).

Figure 12 shows a typical application circuit diagram for driving an
LED or string of LEDs. Note that the pre-biased transistor (Q2) has
the option of bypassing the series base resistor by connecting directly
to pin 7. The N-MOSFET (Q1) is configured as a V

current sink and is biased on by R

. The current passed through the

C

LED string, MOSFET and source resistor, develops a voltage across
R

that provides a bias to the NPN transistor. Consideration of the

S

expected linear mode power dissipation must be factored into the
design, with respect to the DLD101's thermal resistance.

VDS = VCC – V

= VDS * I

P

Q1

F LED String

LED String

– VRS

PWM dimming functionality can be effected by either driving the NPN
base via an additional resistor (thereby overriding the feedback from
RS) or by pulling the gate of the MOSFET down by direct connection.
The PWM control pulse stream can be provided by a micro-controller
or simple 555 based circuitry.

referenced

BE

Ordering Information (Note 7)

Part Number Case Packaging

DLD101-7 DFN3030D-8 3000/Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

YYWW

L101

L101 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 to 53)

DLD101

Document number: DS32007 Rev. 8 - 2

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DFN3030D-8

April 2010

© Diodes Incorporated

Package Outline Dimensions

NEW PRODUCT

A

A1

E

E1

Z

BOTTOM VIEW

Suggested Pad Layout

Y5

Y1

Y

b

D1

G1

DLD101

SEATING PLANE

A3

D

D3

E3

D2

e

E2

L

Dim Min Max Typ Dim Min Max Typ

A 0.570 0.630 0.600 e - - 0.650
A1 0 0.050 0.020 E 2.950 3.075 3.000
A3 - - 0.150 E1 1.800 2.000 1.900

b 0.290 0.390 0.340 E2 0.290 0.490 0.390

D 2.950 3.075 3.000 E3 0.175 0.375 0.275
D1 2.175 2.375 2.275 L 0.300 0.40 0.350
D2 0.980 1.180 1.080 Z - - 0.355
D3 0.105 0.305 0.205

DFN3030D-8

All Dimensions in mm

G5

X2

G6

X4

G3

X3

X3

X5

G

Y2

Y3

Y4

Dimensions

C 0.650 X2 0.220

G 0.150 X3 0.375
G1 0.950 X4 1.080
G2 0.270 X5 0.150
G3 0.135 Y 2.600
G4 1.350 Y1 1.900
G5 0.925 Y2 0.150
G6 1.350 Y3 0.390

X 0.440 Y4 0.815
X1 0.210 Y5 0.550

Value

(in mm)

Dimensions

Value

(in mm)

C

X

G2

G4

X1

DLD101

Document number: DS32007 Rev. 8 - 2

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April 2010

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2010, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DLD101

DLD101

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