Diodes DJT4030P User Manual

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Features

• Ideally Suited for Automated Assembly Processes

• Complementary NPN Type Available (DJT4031N)

• Low Collector-Emitter Saturation Voltage

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

NEW PRODUCT

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current

Top View

= 25°C unless otherwise specified

A

L

L

C

E

C

O

2,4

1

E

S

A

B

3

E

T

I

M

T

Device Schematic

DJT4030P

LOW V

PNP SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-223

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.115 grams (approximate)

O

R

T

3

E
C

4

C

E

R

Pin Out Configuration

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

2

B

1

-40 V

-40 V

-6 V

-5 A

-3 A

-1 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DJT4030P

Document number: DS31590 Rev. 2 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.

R

R

, T

T

J

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JA

JA

STG

1.2 W

104 °C/W

2 W

62.5 °C/W

-55 to +150 °C

March 2009

© Diodes Incorporated

(BR)

(BR)

(BR)

)

)

)

r

C

O

CTO

R

CUR

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current
Emitter-Base Cutoff Current

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

NEW PRODUCT

Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS

Transition Frequency
Output Capacitance

Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

2.0

V
V
V

V

R

CBO
CEO
EBO

I

CBO

I

⎯ ⎯

EBO

h

FE

CE(SAT)

CE(SAT

V

BE(SAT

V

BE(ON

f

⎯

T

C

⎯

obo

C

⎯

ibo

t

on

t

d

t

t

off

t

s

t

f

-40

-40

-6

⎯ ⎯

⎯ ⎯

220
200
100

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯
⎯
⎯
⎯
⎯
⎯

10

⎯ ⎯
⎯ ⎯
⎯ ⎯

-100

-50

-100 nA

⎯ ⎯
⎯

400

⎯ ⎯ V

-150

-200

-500
167

-1.0 V

-1.0 V

150

35

150

53
12

41
180
146

34

⎯
⎯

⎯

⎯
⎯
⎯
⎯
⎯
⎯

V

IC = -100μA

V

IC = -10mA

V

IE = -50μA

nA

μA

= -40V, IE = 0

V

CB

= -40V, IE = 0, TA = 150°C

V

CB

VEB = -6V, IC = 0

V

= -1V, IC = -0.5A

CE

V

⎯

mV

mΩ

= -1V, IC = -1A

CE

= -1V, IC = -3A

CE

I

= -0.5A, IB = -5mA

C

I

= -1A, IB = -10mA

C

= -3A, IB = -0.3A

I

C

IE = -3A, IB = -0.3A
IC = -1A, IB = -0.1A
VCE = -2V, IC = -1A

= -10V, IC = -100mA,

V

MHz

CE

f = 100MHz

pF

VCB = -10V, f = 1MHz

pF

VCB = -5V, f = 1MHz

ns

V

= -10V, IC = -2A,

CC

ns

I

= -200mA

B1

ns
ns

V

= -10V, IC = -2A,

CC

ns
ns

= IB2 = -200mA

I

B1

DJT4030P

1.6

(A)

Pw = 1ms

1

1.2

(Note 4)

DC

Pw = 100ms

Pw = 10ms

0.8

0.1

(Note 3)

D

0.4

P , POWER DISSIPA TION (W)

0

0

25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Dissipation vs. Ambient Temperature

A

DJT4030P

Document number: DS31590 Rev. 2 - 2

°

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LLE

C

I,

0.01

0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collect or-Emitter Voltage (Note 3)

March 2009

© Diodes Incorporated

C CUR

R

N

T GAIN

C

O

CTO

R

T

TER

T

TER TURN-O

OLTAG

T

TER

TURATIO

OLTAG

C

P

CITANC

F

800

V = -1V

CE

600

T = 150°C

A

E

T = 85°C

400

A

-EMI

1

I/I = 10

CB

0.1

T = 150°C

A

T = 85°C

VOLTAGE (V)

A

LLE

T = 25°C

FE

h, D

200

A

T = -55°C

A

0.01

T = -55°C

SATURATION

CE(SAT)

-V ,

A

DJT4030P

T = 25°C

A

NEW PRODUCT

0

1 10 100 1,000 10,000

Fig. 3 Typical DC Current Gain vs. Collector Current

-I , COLLECTOR CURRENT (mA)

C

1.0

E (V)

V = -2V

CE

0.8

N V

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

0.2

T = 150°C

A

BE(ON)

0

-V , BASE-EMI

0.1 1 10 100 1,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

1,000

f = 1MHz

0.001
1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

1.0

E (V)

I = 10

/I

CB

0.8

T = -55°C

N V

A

0.6

T = 25°C

A

SA

0.4

T = 85°C

A

T = 150°C

0.2

A

0

0.1

BE(SAT)

-V , BASE-EMI

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

)
E (p

C

100

ibo

A
A

C

obo

10

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

DJT4030P

Document number: DS31590 Rev. 2 - 2

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March 2009

© Diodes Incorporated

T

R

T T

HER

R

T

C

1

D = 0.7
D = 0.5

D = 0.3

0.1

D = 0.1

0.01

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

NEW PRODUCT

E
AN

ESIS

MAL

ANSIEN

r(t),

0.001

Fig. 8 Transient Thermal Response (Note 3)

Ordering Information (Note 6)

Part Number Case Packaging

DJT4030P-13 SOT-223 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

R (t) = r(t) *

θ

JA

R = 92°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

DJT4030P

R

θθJA

10,000

Marking Information

Package Outline Dimensions

A

A1

Y

ZPS34

W

ZPS34 = Product Type Marking Code

W

YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52

SOT-223

Dim Min Max Typ

A 1.55 1.65 1.60

A1 0.010 0.15 0.05

b1 2.90 3.10 3.00
b2 0.60 0.80 0.70

C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50

E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm

DJT4030P

Document number: DS31590 Rev. 2 - 2

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March 2009

© Diodes Incorporated

DJT4030P

Suggested Pad Layout

NEW PRODUCT

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

Y1

Y2

X2

X1

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3

DJT4030P

Document number: DS31590 Rev. 2 - 2

5 of 5

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March 2009

© Diodes Incorporated