Diodes DJT4030P User Manual
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Features
• Ideally Suited for Automated Assembly Processes
• Complementary NPN Type Available (DJT4031N)
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Top View
= 25°C unless otherwise specified
A
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
Device Schematic
DJT4030P
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
O
R
T
3
E
C
4
C
E
R
Pin Out Configuration
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
2
B
1
-40 V
-40 V
-6 V
-5 A
-3 A
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DJT4030P
Document number: DS31590 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
R
R
, T
T
J
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JA
JA
STG
1.2 W
104 °C/W
2 W
62.5 °C/W
-55 to +150 °C
March 2009
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
)
r
C
O
CTO
R
CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
V
V
V
V
R
CBO
CEO
EBO
I
CBO
I
⎯ ⎯
EBO
h
FE
CE(SAT)
CE(SAT
V
BE(SAT
V
BE(ON
f
⎯
T
C
⎯
obo
C
⎯
ibo
t
on
t
d
t
t
off
t
s
t
f
-40
-40
-6
⎯ ⎯
⎯ ⎯
220
200
100
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100
-50
-100 nA
⎯ ⎯
⎯
400
⎯ ⎯ V
-150
-200
-500
167
-1.0 V
-1.0 V
150
35
150
53
12
41
180
146
34
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
IC = -100μA
V
IC = -10mA
V
IE = -50μA
nA
μA
= -40V, IE = 0
V
CB
= -40V, IE = 0, TA = 150°C
V
CB
VEB = -6V, IC = 0
V
= -1V, IC = -0.5A
CE
V
⎯
mV
mΩ
= -1V, IC = -1A
CE
= -1V, IC = -3A
CE
I
= -0.5A, IB = -5mA
C
I
= -1A, IB = -10mA
C
= -3A, IB = -0.3A
I
C
IE = -3A, IB = -0.3A
IC = -1A, IB = -0.1A
VCE = -2V, IC = -1A
= -10V, IC = -100mA,
V
MHz
CE
f = 100MHz
pF
VCB = -10V, f = 1MHz
pF
VCB = -5V, f = 1MHz
ns
V
= -10V, IC = -2A,
CC
ns
I
= -200mA
B1
ns
ns
V
= -10V, IC = -2A,
CC
ns
ns
= IB2 = -200mA
I
B1
DJT4030P
1.6
(A)
Pw = 1ms
1
1.2
(Note 4)
DC
Pw = 100ms
Pw = 10ms
0.8
0.1
(Note 3)
D
0.4
P , POWER DISSIPA TION (W)
0
0
25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
DJT4030P
Document number: DS31590 Rev. 2 - 2
°
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LLE
C
I,
0.01
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collect or-Emitter Voltage (Note 3)
March 2009
© Diodes Incorporated
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