Diodes DIMD10A User Manual

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Features

• Epitaxial Planar Die Construction

• Built-In Biasing Resistors

• One 500mA PNP and One 100mA NPN

• Lead Free/RoHS Compliant (Note 1)

• “Green” Devices (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Part Number R1 R2 Marking

0.1K 10K

DIMD10A

Tr1
Tr2 10K -

C73

Maximum Ratings PNP Section Tr1 @T

Characteristic Symbol Value Unit

Supply Voltage
Input Voltage
Output Current

DIMD10A

DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT

Mechanical Data

• Case: SC-74R

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin Finish annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Table and Page 3

• Ordering Information: See Page 3

• Weight: 0.015 grams (approximate)

T

= 25°C unless otherwise specified

A

R

R

r2

Device Schematic

1

R

1

2

T

r1

VCC

VIN

IO

-50 V

-5 to +5 V

-500 mA

Maximum Ratings NPN Section Tr2 @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current

V

CBO

V

CEO

V

EBO

IC

50 V
50 V

5 V

100 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation
Operating and Storage Temperature Range

* Not to exceed 200mW for either Tr1 or Tr2.

Electrical Characteristics PNP Section Tr1 @T

PD

TJ, T

STG

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage
Output Voltage

Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*

* Transistor - For Reference Only
Notes: 1. No purposefully added lead.

2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

V

I

V
V

O(off

l(off
l(on

O(on

Il

Gl
fT

-0.3

⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯

68

⎯

⎯ ⎯

-1.5

-0.1 -0.3 V

-25 mA

-0.5

⎯ ⎯ ⎯

200

⎯

DIMD10A

Document number: DS30391 Rev. 5 - 2

1 of 4

www.diodes.com

300* mW

-55 to +150 °C

VCC = -5V, IO = -100μA

V

VO = 0.3, IO = -100mA
IO = -100mA/-5mA
VI = -2V

μA

VCC = -50V, VI = 0V

⎯

MHz

VCE = -10V, IE = -50mA, f = 100MHz

September 2010

© Diodes Incorporated

)

P, P

OWER

PATIO

N

C CUR

REN

T GAIN (NOR

C

O

C

T

O

R

T

TER

C

P

CIT

N

C

F

Electrical Characteristics NPN Section Tr2 @T

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio

Gain-Bandwidth Product (Note 3)

Notes: 3. Transistor - For Reference Only

BV

CBO

BV

CEO

BV

EBO

I

⎯ ⎯

CBO

I

EBO

V

CE(SAT

hFE

fT ⎯

Typical Curves - Tr2

250

200

(mW)

150

= 25°C unless otherwise specified

A

50

⎯ ⎯

50

⎯ ⎯

5

⎯ ⎯

0.5

⎯ ⎯
⎯ ⎯

0.5

0.3 V

100 250 600

250

⎯

V
V
V

μA
μA

⎯ IC = 1mA, VCE = 5V

MHz

1,000

MALIZED)

100

DIMD10A

IC = 50μA
IC = 1mA
IE = 50μA
VCB = 50V
VEB = 4V
IC/IB = 10mA / 1.0mA

VCE = 10V, IE = -5mA, f = 100MHz

V = 10

CE

DISSI

100

D

50

0

-50

050100150

T , AMBIENT TEMPERATURE ( C)

A

Fig. 1 Power Dissip ation vs. Ambi ent Te m perature

1

I/I = 10

CB

0.1

EMI

25 C

75 C

°

°

LLE

0.01

SATURATION VOLTAGE (V)

CE(SAT)

V,

-25 C

10

FE

h, D

1

110100

°

I , COLLECTOR CURRENT (mA)

C

Fig. 2 Typical DC Current Gain vs. Collector Current

4

I = 0mA

E

3

)
E (p

°

A

2

A
A

C

1

obo

0.001
0

10

I , COLLECTOR CURRENT (mA)

C

20

30

Fig. 3 Typical Collector Emitter Saturation Voltage

vs. Collect or Current

40

50

0

0

10

5

V , REVERSE VOLTAGE (V)

R

15

Fig. 4 Typical Capacitance Ch ar acterist ics

20

25

30

DIMD10A

Document number: DS30391 Rev. 5 - 2

2 of 4

www.diodes.com

September 2010

© Diodes Incorporated