Glass Passivated Die Construction
Super-Fast Recovery Time for High Efficiency
Patented Interlocking Clip Design for High Surge Current
Capacity
±2kV ESD Protection (IEC61000-4-2, Contact Discharge)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
"Green" Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
Green
Top View
DFLU1200
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
PowerDI
Mechanical Data
Case: PowerDI®123
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.01 grams (approximate)
®
123
Ordering Information (Note 3)
Device Packaging Shipping
DFLU1200-7
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, visit our website at http:// www.diodes.com/products/packages.html
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 3)
RMS Reverse Voltage
Average Rectified Output Current (see figure 4)
V
V
V
R(RMS
RRM
RWM
V
R
I
O
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Power Dissipation (Note 5) @ TA = +25°CPD
Thermal Resistance Junction to Soldering Point (Note 6)
Thermal Resistance Junction to Ambient (Note 5) @TA = +25°C
Thermal Resistance Junction to Ambient (Note 7) @TA = +25°C
Operating and Storage Temperature Range
R
R
R
T
J, TSTG
JS
JA
JA
116
182
DFLU1200
200 V
140 V
1.0 A
1.0 W
-65 to +150 °C
6 °C/W
°C/W
°C/W
Electrical Characteristics(@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage Drop @ IF = 0.6A
@ I
= 1.0A
F
Peak Reverse Current @ TA = +25C
at Rated DC Blocking Voltage (Note 4) @ T
= +100C
A
Reverse Recovery Time (Note 8)
I
FSM
V
I
RM
t
FM
r
Typical Total Capacitance (f = 1MHz, VR = 4VDC) CT
Notes: 4. Short duration pulse test used to minimize self-heating effect.
5. Device mounted on 1" x 1", Polymide PCB; 2 oz. Cu pad layout as shown on Diodes Inc. suggested pad layout document AP02001.pdf.
6. Theoretical R
8. Measured with I
7. Device mounted on FR-4 PCB, 2 oz. Copper, minimum recommended pad layout pattern per http://www.diodes.com/datasheets/ap02001.pdf
DFLU1200
Document number: DS30601 Rev. 4 - 2
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
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