Diodes DFLS1150 User Manual

Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Patented Interlocking Clip Design for High Surge Current
Capacity
Lead Free Finish, RoHS Compliant (Note 1)
"Green" Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
DFLS1150
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERDI
Mechanical Data
Case: POWERDI®123
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish – Matte Tin annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.01 grams (approximate)
Top View
®
123
Ordering Information (Note 2)
Part Number Case Packaging
DFLS1150-7
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. For packaging details, go to our website at http://www.diodes.com.
POWERDI
®
123
3000/Tape & Reel
Marking Information
Date Code Key
Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
F07
YM
DFLS1150
Document number: DS30593 Rev. 7 - 2
F07 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: R = 2004) M = Month (ex: 9 = September)
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)
)
θ
θ
(BR)
TANT
O
U
F
O
RWARD CUR
RENT
Maximum Ratings @T
= 25°C unless otherwise specified
A
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage Average Forward Current Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Soldering Point (Note 3) Thermal Resistance Junction to Ambient (Note 4) TA = 25°C R
Operating and Storage Temperature Range
T
DFLS1150
V
RRM
V
RWM
V
R
V
R(RMS
I
F(AV
I
FSM
R
JS JA
, T
J
STG
125
150 V
106 V
1.0 A 50 A
7
-55 to +175
°C/W °C/W
°C
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) Forward Voltage Leakage Current (Note 5) Total Capacitance
Notes: 3. Theoretical R
4. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
10
(A)
1
0.1
0.01
S
0.001
ANE
calculated from the top center of the die straight down to the PCB/cathode tab solder junction.
θJS
= 25°C unless otherwise specified
A
V
R
V
F
I
R
C
T
150
0.82 V 2
28
V
μA pF
IR = 2μA IF = 1.0A
= 150V, TA = 25°C
V
R
VR = 5VDC, f = 1MHz
0.0001
F
I , INS
0.00001
00.40.5 V , INSTANTA NEOUS FORW ARD VOLTAGE (V)
0.20.1
0.3
F
Fig. 1 Typical Forward Characte r is ti cs
0.6 0.7 0.8 0.9
0
V , INSTANTANEOUS REVERSE VOLT AGE (V)
R
Fig. 2 Typical Reverse Characteristics
DFLS1150
Document number: DS30593 Rev. 7 - 2
2 of 4
www.diodes.com
April 2011
© Diodes Incorporated
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