Diodes DF005S, DF10S User Manual
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
Low Forward Voltage Drop, High Current Capability
Surge Overload Rating to 50A Peak
Designed for Surface Mount Application
UL Listed Under Recognized Component Index, File
Number E94661
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Pb
DF005S –DF10S
Mechanical Data
Case: DF-S
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Solderable per MIL-STD-202,
Method 208
Polarity: As Marked on Case
Weight: 0.38 grams (approximate)
Ordering Information (Note 3)
Part Number
DFxS
DFxS-T
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Case Packaging
DF-S 50 Per Tube
DF-S 1500/Tape & Reel, 13-inch
Marking Information
DF005S – DF10S
Document number: DS17001 Rev. 16 - 2
DFxxxS = Product Type Marking Code,ex:DF10S
YWW = Date Code Marking
Y = Last digit of year (ex: 2 for 2012)
WW =Week code 01 to 52
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August 2013
© Diodes Incorporated
Maximum Ratings (@T
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Current @ TA = +40°C IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Peak Forward Surge Current, 1.0 ms
Single Half Sine-Wave Superimposed on Rated Load
= +25°C, unless otherwise specified.)
A
V
V
V
I
I
Thermal Characteristics
Characteristic Symbol
Typical Thermal Resistance, Junction to Ambient (Note 2)
R
RMM
RWM
VR
RMS
FSM
FSM
θJA
DF005S –DF10S
DF
005S
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
DF
005S
DF
01S
DF
01S
DF
02S
DF
02S
DF
04S
1.0 A
50 A
100 A
DF
04S
+40 °C/W
DF
06S
DF
06S
DF
08S
DF
08S
DF
10S
DF
10S
Unit
Unit
Operating and Storage Temperature Range
Electrical Characteristics (@T
Characteristic Symbol
Forward Voltage (per element) @ IF = 1.0A VFM
Peak Reverse Current at Rated @ TA = +25°C
DC Blocking Voltage (per element) @ TA = +125°C
I2t Rating for Fusing (t<8.3ms) I2t 10.4 A2s
Typical Total Capacitance (per element) (Note 1)
= +25°C, unless otherwise specified.)
A
DF005S – DF10S
Document number: DS17001 Rev. 16 - 2
TJ, T
STG
DF
005S
IRM
CT
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DF
01S
-65 to +150 °C
DF
02S
DF
04S
1.1 V
10
500
25 pF
DF
06S
DF
08S
© Diodes Incorporated
DF
10S
August 2013
Unit
µA
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