Diodes DF005M, DF10M User Manual

DF005M - DF10M

1.0A GLASS PASSIVATED BRIDGE RECTIFIERS

Features

• Glass Passivated Die Construction

• Low Forward Voltage Drop, High Current Capability

• Surge Overload Rating to 50A Peak

• Designed for Printed Circuit Board Applications

• UL Listed Under Recognized Component Index, File

Number E94661

• Lead Free Finish, RoHS Compliant (Date Code 0532+)
(Note 3)

Mechanical Data

• Case: DF-M

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Finish - Tin. Solder Plated Leads,

Solderable per MIL-STD-202, Method 208

• Polarity: As Marked on Case

• Marking Information: Type Number, See Page 3

• Weight: 0.38 grams (approximate)

H

J

L

K

Maximum Ratings and Electrical Characteristics @T

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

V
V

V

RMM
RWM

V

RMS

DF

005M

50 100 200 400 600 800 1000 V

R

35 70 140 280 420 580 700 V

C

A

B

E

D

G

= 25°C unless otherwise specified

A

DF

01M

DF

02M

DF

04M

DF

06M

DF-M

Dim Min Max

A 7.40 7.90
B 6.20 6.50
C 0.22 0.30
D 1.27 2.03
E 7.60 8.90
G 3.81 4.69
H 8.13 8.51
J 2.40 3.40
K 5.00 5.20
L 0.46 0.58

All Dimensions in mm

DF

08M

DF

10M

Unit

Average Rectified Output Current @ TA = 40°C I
Non-Repetitive Peak Forward Surge Current, 8.3 ms

Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage (per element) @ IF = 1.0 A V
Peak Reverse Current @ TA = 25°C

at Rated DC Blocking Voltage (per element) @ TA = 125°C
I2t Rating for Fusing (t<8.3ms) I2t 10.4 A2s

Typical Total Capacitance per element (Note 1)
Typical Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range

Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS21201 Rev. 15 - 2

2. Thermal Resistance, junction to ambient, measured on PC board with 5.0mm

3. RοHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.

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I

FSM

I

C

R

Tj, T

1 of 3

RM

θ

O

FM

T

JA

STG

2

(0.03mm thick) land areas.

1.0 A
50 A

1.1 V
10

500

25 pF
40 °C/W

-65 to +150 °C

DF005M-DF10M

© Diodes Incorporated

µA

TANT

O

US FOR

RD C

URRENT

P

O

RWAR

URGE CUR

RENT

C, TOT

CAPACITANC

F

1.0

0.5

(AV)

I , AVERAGE FORWARD CURRENT (A)

0

40

60

T , AMBIENT TEMPERATURE (°C)

A

80

Fig. 1 Output Current Derating Curve

100 120 140

60

(A)

50

10

(A)

1.0

WA

0.1

ANE

F

I, INS

0.01

0.4

0.6

V , INSTANTANEOUS FORWARD VOLTA GE (V)

F

0.8 1.0

Fig. 2 Typical Forward Characteristics (per element)

100

T = 25°C

j

f = 1.0 Mhz

)

V = 50 mV p-p

sig

E (p

1.2

1.4

40

30

D S

20

10

EAK F

FSM

0

I,

110

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Forward Surge Current

100

10

1.0

AL

100

10

T

1

110

V , REVERSE VOLT AGE (V)

R

Fig. 4 Typical Total Capacitance (per element)

100

0.1

0.01
200406080100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typ Rev erse Char acteristi cs (per element)

DS21201 Rev. 15 - 2

2 of 3

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DF005M-DF10M

© Diodes Incorporated