Diodes DESD6V8DLP User Manual
Features
• IEC 61000-4-2 (ESD): Level 4, Air – 16kV, Contact – 8kV
• MIL STD 883C (ESD) HBM – 16kV
• Low Leakage < 1μA @ 5.25 Volts
• Low Capacitance (40pF typical)
• Surface Mount Package Ideally Suited for Automated Insertion
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
DFN1006-3
Bottom View
DESD6V8DLP
DUAL SURFACE MOUNT TVS
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0009 grams (Approximate)
Top View
Internal Schematic
Ordering Information (Note 3)
Part Number Case Packaging
DESD6V8DLP-7 DFN1006-3 3000/Tape & Reel
DESD6V8DLP-7B DFN1006-3 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DESD6V8DLP-7 DESD6V8DLP-7B
9Z 9Z
Dot Denotes
Anode Side
DESD6V8DLP
Document number: DS32140 Rev. 6 - 2
Bar Denotes
Cathode Side
1 of 4
www.diodes.com
9Z = Product Type Marking Code
February 2011
© Diodes Incorporated
p
θ
K
K
K
C, TOT
CAPACITAN
C
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Forward Voltage @ IF = 10mA VF
Thermal Characteristics
Characteristic Symbol Value Unit
Peak Pulse Power (tp = 8x20μs) (Note 4) TA = 25°C P
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient (Note 4) TA = 25°C
Operating and Storage Temperature Range
NEW PRODUCT
Electrical Characteristics @T
Reverse
Standoff
Voltage
V
(V)
RWM
5.25 6.4 6.8 7.2 5.0 1.0 30 300 0.5 40
Notes: 4. Device mounted on FR-5 PC board of size 1.0 x 0.75 x 0.62 inches.
Breakdown Voltage
V
@ IT
BR
Min (V) Typ (V) Max (V)
5. Short duration pulse test used to minimize self-heating effect.
6. Clamping voltage value is based on an 8x20 μs peak pulse current (I
= 25°C unless otherwise specified
A
Test
Current
Max. Reverse
Leakage @ V
(Note 5)
IT (mA) IR (μA) ZZT @ IT (Ω) Z
R
, T
T
J
RWM
) waveform.
pp
DESD6V8DLP
1.25 V
k
P
D
JA
STG
Maximum Dynamic
Impedance
f = 1kHz
50
45
70 W
385 mW
325
-55 to +150
°C/W
°C
Typical Total
Capacitance C
= 0V, f = 1MHz
V
R
@ I
Z
(Ω) I
Z
Z
(mA)
f = 1MHz
(pF)
T
100
40
E (pF)
35
30
25
50
20
AL
15
T
10
PppP
I , PEAK PULSE CURRENT (%I )
0
0
20 40
t, TIME ( s)
μ
60
Fig. 1 Pulse Waveform
5
0
0123456
V , REVERSE VOLTAGE (V)
R
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
DESD6V8DLP
Document number: DS32140 Rev. 6 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
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