Diodes DEMD48 User Manual
Features
• Epitaxial Planar Die Construction
• Surface Mount Package Suited for Automated Assembly
• Simplifies Circuit Design and Reduces Board Space
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish ⎯ Matte Tin Finish annealed over Copper
NEW PRODUCT
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.005 grams (approximate)
Reference Device Type R1(Nom) R2(Nom)
Q
1
Q
2
NPN 47kΩ 47kΩ
PNP 2.2 kΩ 47kΩ
DEMD48
DUAL NPN/PNP PRE-BIASED TRANSISTOR
SOT-563
6
Q
1
54
R
2
R
1
R
1
2.2k
47k
R
47k
2
47k
Q
2
312
Maximum Ratings, Total Device @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
P
D
R
JA
θ
T
, T
j
STG
Maximum Ratings, Pre-Biased NPN Transistor, Q1 @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Input Voltage
Output Current (DC)
Peak Collector Current
V
CBO
V
CEO
V
EBO
V
IN
I
O
I
CM
Maximum Ratings, Pre-Biased PNP Transistor, Q2 @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Input Voltage
Output Current (DC)
Peak Collector Current
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
V
CBO
V
CEO
V
EBO
V
IN
I
O
I
CM
DS31224 Rev. 4 - 2
1 of 4
www.diodes.com
300 mW
417 °C/W
-55 to +150 °C
= 25°C unless otherwise specified
A
50 V
50 V
10 V
-10 to +40 V
100 mA
100 mA
= 25°C unless otherwise specified
A
-50 V
-50 V
-10 V
-12 to +5 V
-100 mA
-100 mA
DEMD48
© Diodes Incorporated
Electrical Characteristics, Pre-Biased NPN Transistor, Q1 @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Cut-Off Current I
Collector-Emitter Cut-Off Current I
Emitter-Base Cut-Off Current I
Input Voltage
Collector-Emitter Saturation Voltage V
CBO
CEO
EBO
V
I(off)
V
I(on)
CE(SAT)
DC Current Gain h
Input Resistance R
Resistance Ratio R2/R
Collector Capacitance C
FE
1
1
C
- - 100 nA VCB = 50V, IE = 0A
- -
- - 90
- 1.2 0.8 V
3 1.6 - V VCE = 0.3V, IO = 2mA
- - 0.15 V IC/IB = 10mA/0.5mA
80 - - - VCE = 5V, IC = 5mA
33 47 61 kΩ -
0.8 1 1.2 - -
- - 2.5 pF VCB = 10V, IE = 0, f = 1MHz
Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @T
NEW PRODUCT
Collector-Base Cut-Off Current I
Collector-Emitter Cut-Off Current I
Emitter-Base Cut-Off Current I
Input Voltage
Collector-Emitter Saturation Voltage V
DC Current Gain h
Input Resistance R
Resistance Ratio R2/R
Collector Capacitance C
1,000
Characteristic Symbol Min Typ Max Unit Test Condition
CBO
CEO
EBO
V
I(off)
V
I(on)
CE(SAT)
FE
1
C
1
- - -100 nA VCB = -50V, IE = 0A
- -
- - -180
- -0.6 -0.5 V
-1.1 -0.75 - V VO = -0.3V, IO = -5mA
- - -0.1 V IC/IB = -5mA/-0.25mA B
100 - - - VCE = -5V, IC = -10mA
1.54 2.2 2.86 kΩ 17 21 26 - -
- - 3.0 pF VCB = -10V, IE = 0, f = 1MHz
= 25°C unless otherwise specified
A
50
1
μA
μA
= 30V, IB = 0A B
V
CE
= 30V, IB = 0A, TB
V
CE
VEB = 5V, IC = 0A
= 150°C
A
VCE = 5V, IO = 100μA
B
= 25°C unless otherwise specified
A
-1
-50
μA
μA
= -30V, IB = 0A B
V
CE
V
= -30V, IB = 0A, TB
CE
VEB = -5V, IC = 0A
= -5V, IO = -100μA
V
CC
= 150°C
A
100
10
1
DS31224 Rev. 4 - 2
2 of 4
www.diodes.com
DEMD48
© Diodes Incorporated
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