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Features
• Very Sharp Breakdown Characteristics
• Very Tight Tolerance on V
• Ideally Suited for Automated Assembly Processes
• Very Low Leakage Current
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
Maximum Ratings @T
Forward Voltage @ IF = 10mA VF
Z
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Mechanical Data
• Case: SOD-323
• Case Material: Molded Plastic, “Green” Molding Compound. UL
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
• Polarity: Cathode Band
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.004 grams (approximate)
Top View
DDZ9689S - DDZ9717S
SURFACE MOUNT PRECISION ZENER DIODE
Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DDZ9689S - DDZ9717S
Document number: DS30409 Rev. 6 - 2
3.
Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
PD
R
JA
T
J, TSTG
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200 mW
625
-65 to +150
°C/W
°C
August 2009
© Diodes Incorporated
DDZ9689S - DDZ9717S
Electrical Characteristics @T
Type
Number
Type
Code
= 25°C unless otherwise specified
A
Zener Voltage Range (Note 3)
VZ @ IZT IZT IR @ VR
Nom (V) Min (V) Max (V)
Maximum Reverse
Leakage Current (Note 4)
A μA
DDZ9689S HH 5.1 4.85 5.36 50 5 3
DDZ9690S HJ 5.6 5.32 5.88 50 2 4
DDZ9691S HK 6.2 5.89 6.51 50 1 5
DDZ9692S HL 6.8 6.46 7.14 50 0.1 5.1
DDZ9693S HM 7.5 7.13 7.88 50 0.1 5.7
DDZ9694S HN 8.2 7.79 8.61 50 0.1 6.2
DDZ9696S HP 9.1 8.65 9.56 50 0.1 6.9
DDZ9697S HQ 10 9.50 10.50 50 0.1 7.6
DDZ9698S HR 11 10.45 11.55 50 0.05 8.4
DDZ9699S HS 12 11.40 12.60 50 0.05 9.1
DDZ9700S HT 13 12.35 13.65 50 0.05 9.8
DDZ9701S HU 14 13.30 14.70 50 0.05 10.6
DDZ9702S HV 15 14.25 15.75 50 0.05 11.4
DDZ9703S HW 16 15.20 16.80 50 0.05 12.1
DDZ9705S (Note 5) HY 18 17.10 18.90 50 0.05 13.6
DDZ9707S MD 20 19.00 21.00 50 0.05 15.2
DDZ9708S ME 22 20.90 23.10 50 0.05 16.7
DDZ9709S MF 24 22.80 25.20 50 0.05 18.2
DDZ9711S MH 27 25.65 28.35 50 0.05 20.4
DDZ9712S MJ 28 26.60 29.40 50 0.05 21.2
DDZ9713S MK 30 28.50 31.50 50 0.05 22.8
DDZ9714S ML 33 31.35 34.65 50 0.05 25.0
DDZ9715S MM 36 34.20 37.80 50 0.05 27.3
DDZ9716S MN 39 37.05 40.95 50 0.05 29.6
DDZ9717S MO 43 40.85 45.15 50 0.05 32.6
Notes: 3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TT = 30°C ±1°C.
4. Short duration pulse test used to minimize self-heating effect.
5. Qualified to AEC-Q101 Standards for High Reliability
240
1,000
V
(mA)
(mW)
160
I
120
DISSI
WE
,
D
200
80
40
0
250 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Derating Curve
°
D
WA
S
E
F
I, I
100
10
1.0
0.1
0.01
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward C haracter istics
0.2
0.4
0.6 0.8
1.0
1.2
DDZ9689S - DDZ9717S
Document number: DS30409 Rev. 6 - 2
2 of 7
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August 2009
© Diodes Incorporated
DDZ9689S - DDZ9717S
100m
10m
1m
(A)
EN
Z
I, ZENE
100n
10n
35
40 45
100m
10m
05
10 15
20
25 30
100m
10m
(A)
1m
Z
I, ZE
100n
3.0 5.0 7.0
4.0 6.0 8.0
V , ZENER VOLTAGE (V)
Z
Fig. 4 Typical Zener Breakdown Cha r ac t eristics,
DDZ9692S - DDZ9694S
100m
10m
(A)
1m
EN
9.0
(A)
1m
Z
I, ZENE
100n
10.0
8.0 11.0 13.0 15.0
V , ZENER VOLTAGE (V)
Fig. 5 Typical Zener Br eakdown Characteristics,
Z
DDZ9696S - DDZ9701S
12.0 14.0
100m
10m
(A)
1m
Z
I, ZENE
100n
14 16
15 17
V , ZENER VOLT AGE (V)
Z
18 20
19
Fig. 6 Typical Zener Breakdown Characteristics,
DDZ9702S - DDZ9705S
Z
I, ZENE
100n
19 21 23
20
V , ZENER VOLTAGE (V)
Z
Fig. 7 Typical Zener Breakdown Characte r istics,
DDZ9707S - DDZ9709S
22
24
25
DDZ9689S - DDZ9717S
Document number: DS30409 Rev. 6 - 2
3 of 7
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August 2009
© Diodes Incorporated