Diodes DDTD-xxxx-U User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (DDTB)
• Built-In Biasing Resistors, R1, R2
• Lead Free/RoHS Compliant Version (Note 2)
• "Green" Device, Note 3 and 4
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: See Table Below & Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
DDTD (xxxx) U
NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
A
G
H
K
J
OUT
R1
B
IN
Schematic and Pin Configuration
SOT-323
Dim Min Max
A 0.25 0.40
C
B
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
M
J 0.0 0.10
K 0.90 1.00
L
ED
3
C
R2
E
21
GND(0)
L 0.25 0.40
M 0.10 0.18
α
All Dimens mm ions in
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
VCC
VIN
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
Input Voltage, (2) to (1) DDTD123TU
DDTD143TU
DDTD114TU
V
EBO (MAX)
DDTD114GU
Output Current All
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30382 Rev. 7 - 2
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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R
Tj, T
IC
Pd
θ
JA
STG
500 mA
200 mW
625
-55 to +150
50 V
5 V
°C/W
°C
DDTD (xxxx) U
© Diodes Incorporated
V
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
DDTD133HU
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
= 25°C unless otherwise specified R1, R2 Types
A
0.5
0.5
0.5
V
l(off)
0.5
0.5
⎯ ⎯
V
VCC = 5V, IO = 100μA
0.3
0.3
0.3
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
V
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
IO/Il = 50mA/2.5mA
V
V
l(on)
O(on)
3.0
3.0
3.0
⎯ ⎯
3.0
3.0
2.0
2.0
2.0
⎯ ⎯
0.3V V
7.2
3.8
1.8
0.88
Il ⎯ ⎯
28
mA
VI = 5V
7.2
3.6
2.4
0.5
I
⎯ ⎯
O(off)
μA
VCC = 50V, VI = 0V
33
39
47
Gl
56
47
⎯ ⎯ ⎯ VO = 5V, IO = 50mA
56
56
56
fT
⎯
200
⎯
MHz
VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics @T
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
Collector Cutoff Current
DDTD123TU
Emitter Cutoff Current
DDTD143TU
DDTD114TU
DDTD114GU
Collector-Emitter Saturation Voltage
DDTD123TU
DC Current Transfer Ratio
DDTD143TU
DDTD114TU
DDTD114GU
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30382 Rev. 7 - 2
= 25°C unless otherwise specified R1-Only, R2-Only Types
BV
BV
CBO
CEO
50
40
⎯ ⎯
⎯ ⎯
V
V
IC = 50μA
IC = 1mA
IE = 50μA
BV
EBO
5
⎯ ⎯
V
IE = 50μA
IE = 50μA
IE = 720μA
0.5
0.5
0.5
0.5
580
0.3 V
600
600
600
⎯
MHz
⎯
μA
VCB = 50V
μA
VEB = 4V
IC = 50mA, IB = 2.5mA
⎯
IC = 5mA, VCE = 5V
VCE = 10V, IE = -5mA, f = 100MHz
© Diodes Incorporated
I
⎯ ⎯
CBO
I
EBO
V
⎯ ⎯
CE(sat)
hFE
fT ⎯
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⎯
⎯
⎯
300
100
100
100
56
⎯
250
250
250
⎯
200
DDTD (xxxx) U
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