Diodes DDTD-xxxx-C User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (DDTB)
• Built-In Biasing Resistors, R1, R2
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 2 and 3)
Part Number R1 (NOM) R2 (NOM) Marking
DDTD113EC 1K 1K N60
DDTD123EC 2.2K 2.2K N61
DDTD143EC 4.7K 4.7K N62
DDTD114EC 10K 10K N63
DDTD122JC 0.22K 4.7K N64
DDTD113ZC 1K 10K N65
DDTD123YC 2.2K 10K N66
DDTD133HC 3.3K 10K N67
DDTD123TC 2.2K OPEN N69
DDTD143TC 4.7K OPEN N70
DDTD114TC 10K OPEN N71
DDTD114GC 0 10K N72
Top View
DDTD (xxxx) C
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 3. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Table and Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
OUT
3
C
R1
B
R2
E
21
IN
Package Pin Out Configuration
GND(0)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
Input Voltage, (2) to (1) DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
Output Current All
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
VCC
VIN
V
EBO(MAX)
IC
PD
R
JA
TJ, T
1 of 4
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STG
50 V
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
V
-5 to +10
-5 to +12
-6 to +20
5 V
500 mA
200 mW
Fire Retardants.
2O3
625
-55 to +150
°C/W
°C
January 2009
© Diodes Incorporated
)
)
)
Electrical Characteristics - R1, R2 Types @T
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
V
l(OFF)
V
l(ON)
V
⎯ ⎯
O(ON
Il ⎯ ⎯
I
⎯ ⎯
O(OFF
Gl
ΔR1
Δ(R2/R1)
fT ⎯
= 25°C unless otherwise specified
A
0.5
0.5
0.5
0.5
0.5
⎯ ⎯
V
0.3
0.3
0.3
3.0
3.0
3.0
3.0
⎯ ⎯
3.0
V
2.0
2.0
2.0
0.3V V
7.2
3.8
1.8
0.88
mA
28
7.2
3.6
2.4
0.5
μA
33
39
47
56
47
⎯ ⎯ ⎯ VO = 5V, IO = 50mA
56
56
56
-30
-20
⎯
⎯
200
+30 %
+20 %
MHz
⎯
DDTD (xxxx) C
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
IO/Il = -50mA/-2.5mA
VI = 5V
VCC = 50V, VI = 0V
⎯
⎯
VCE = 10V, IE = 5mA,
f = 100MHz
Electrical Characteristics - R1 Only, R2 Only Types @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
Collector Cutoff Current
DDTD123TC
Emitter Cutoff Current
DDTD143TC
DDTD114TC
DDTD114GC
Collector-Emitter Saturation Voltage
DDTD123TC
DC Current Transfer Ratio
DDTD143TC
DDTD114TC
DDTD114GC
Bias Resistor Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
BV
CBO
BV
CEO
BV
EBO
I
⎯ ⎯
CBO
I
EBO
V
CE(SAT
hFE
ΔR1 or ΔR2
fT
50
40
5
⎯
⎯
⎯
300
⎯ ⎯
100
100
100
56
-30
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
250
250
⎯
⎯
200
V
V
V
0.5
μA
0.5
0.5
μA
0.5
580
0.3 V
600
600
⎯
600
⎯
+30 %
MHz
⎯
IC = 50μA
IC = 1mA
IE = 50μA
IE = 50μA
IE = 50μA
IE = 720μA
VCB = 50V
VEB = 4V
IC = 50mA, IB = 2.5mA
IC = 50mA, VCE = 5V
⎯
VCE = 10V, IE = -5mA,
f = 100MHz
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
2 of 4
www.diodes.com
January 2009
© Diodes Incorporated
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