Diodes DDTD-LO-R1-U User Manual

DDTD (LO-R1) U

NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary PNP Types Available (DDTB)

• Built-In Biasing Resistors

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device, Note 3 and 4

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, "Green" Molding

Compound, Note 4. UL Flammability Classification
Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

• Marking Information: See Table Below & Page 3

• Ordering Information: See Page 3

• Weight: 0.006 grams (approximate)

P/N R1 (NOM) R2 (NOM) MARKING

DDTD122LU
DDTD142JU
DDTD122TU
DDTD142TU

0.22KΩ

0.47KΩ

0.22KΩ

0.47KΩ

10KΩ

10KΩ
OPEN
OPEN

N75
N76
N77
N78

A

G
H

K

J

C

B

M

L

ED

OUT

3

C

R1

B

R2

E

21

IN

Schematic and Pin Configuration

GND(0)

SOT-323

Dim Min Max

A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18

0° 8°

α

All Dimensions in mm

Maximum Ratings @T

Characteristic Symbol Value Unit

Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTD122LU

DDTD142JU
Input Voltage, (2) to (1) DDTD122TU

DDTD142TU
Output Current All

Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range

Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30398 Rev. 6 - 2

= 25°C unless otherwise specified

A

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1 of 3

VCC

VIN

V

EBO (MAX)

IC

Pd

R

θ

Tj, T

JA

STG

-5 to +6

-5 to +6

500 mA
200 mW
625

-55 to +150

50 V

5 V

°C/W

°C

DDTD (LO-R1) U

© Diodes Incorporated

V

Electrical Characteristics @T

= 25°C unless otherwise specified R1, R2 Types

A

Characteristic Symbol Min Typ Max Unit Test Condition

DDTD122LU

Input Voltage

DDTD142JU
DDTD122LU

DDTD142JU

Output Voltage
Input Current

DDTD122LU
DDTD142JU

Output Current
DC Current Gain

DDTD122LU
DDTD142JU

Gain-Bandwidth Product*

* Transistor - For Reference Only

Electrical Characteristics @T

= 25°C unless otherwise specified R1-Only, R2-Only Types

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage DDTD122TU
DDTD142TU

Collector Cutoff Current

Emitter Cutoff Current

DDTD122TU
DDTD142TU

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

DDTD122TU
DDTD142TU

Gain-Bandwidth Product*

* Transistor - For Reference Only

DS30398 Rev. 6 - 2

V

l(off)

V

⎯ ⎯

l(on)

V

O(on)

0.3

0.3

⎯ ⎯

Il ⎯ ⎯

I

⎯ ⎯

O(off)

Gl

56
56

fT ⎯

50
40

5

⎯ ⎯
⎯

⎯
⎯ ⎯

100
100

⎯

BV
BV

BV

I
I

V

CE(sat)

hFE

CBO

CEO

EBO

CBO

EBO

fT

2 of 3

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2.0

2.0

28
13

0.5

V

VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA

V

VO = 0.3V, IO = 20mA
IO/Il = 50mA/2.5mA

mA

VI = 5V

μA

VCC = 50V, VI = 0V

⎯ ⎯

0.3V V

⎯ ⎯ ⎯ VO = 5V, IO = 50mA

200

⎯ ⎯
⎯ ⎯

⎯ ⎯

⎯

250
250

200

MHz

⎯

0.5

0.5

0.5

0.3 V

600
600

⎯

VCE = 10V, IE = 5mA, f = 100MHz

V

IC = 50μA

V

IC = 1mA
IE = 50μA

V

IE = 50μA

μA

VCB = 50V

μA

VEB = 4V

IC = 50mA, IB = 2.5mA

⎯ IC = 5mA, VCE = 5V

MHz

VCE = 10V, IE = -5mA, f = 100MHz

DDTD (LO-R1) U

© Diodes Incorporated