Diodes DDTD-LO-R1-C User Manual
Please click here to visit our online spice models database.
Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (DDTB)
• Built-In Biasing Resistors
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Information: See Table Below & Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
P/N R1 (NOM) R2 (NOM) Type Code
DDTD122LC
DDTD142JC
DDTD122TC
DDTD142TC
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
N75
N76
N77
N78
DDTD (LO-R1) C
NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
A
E
D
G
H
B
IN
Schematic and Pin Configuation
OUT
R1
BTOP VIEW
C
K
J
L
M
SOT-23
Dim Min Max
0.37 0.51
A
1.20 1.40
B
2.30 2.50
C
0.89 1.03
D
0.45 0.60
E
1.78 2.05
G
2.80 3.00
H
0.013 0.10
J
0.903 1.10
K
0.45 0.61
L
0.085 0.180
M
α 0° 8°
3
C
R2
E
21
GND(0)
All Dime sions in mmn
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTD122LC
DDTD142JC
Input Voltage, (2) to (1) DDTD122TC
DDTD142TC
Output Current All
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2. No purposefully added lead. Halogen and Antimony Free.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
DS30399 Rev. 6 - 2
VCC
VIN
V
EBO (MAX)
IC
PD
R
JA
θ
TJ, T
1 of 3
www.diodes.com
STG
50 V
-5 to +6
-5 to +6
5 V
V
500 mA
200 mW
Fire Retardants.
2O3
625
-55 to +150
°C/W
°C
DDTD (LO-R1) C
© Diodes Incorporated
Electrical Characteristics @T
A
Characteristic Symbol Min Typ Max Unit Test Condition
DDTD122LC
Input Voltage
DDTD142JC
DDTD122LC
DDTD142JC
Output Voltage
Input Current
DDTD122LC
DDTD142JC
Output Current
DC Current Gain
DDTD122LC
DDTD142JC
Gain-Bandwidth Product*
* Transistor - For Reference Only
Electrical Characteristics @T
= 25°C unless otherwise specified R1-Only, R2-Only Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTD122TC
DDTD142TC
Collector Cutoff Current
Emitter Cutoff Current
DDTD122TC
DDTD142TC
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DDTD122TC
DDTD142TC
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30399 Rev. 6 - 2
= 25°C unless otherwise specified R1, R2 Types
V
V
V
l(off)
l(on)
O(on)
0.3
0.3
⎯ ⎯
⎯ ⎯
Il ⎯ ⎯
⎯ ⎯
56
56
I
O(off)
Gl
fT ⎯
BV
BV
BV
I
I
V
CE(sat)
hFE
CBO
CEO
EBO
CBO
EBO
50
40
5
⎯ ⎯
⎯
⎯
⎯ ⎯
100
100
fT ⎯
⎯ ⎯
2.0
2.0
0.3V V
28
13
0.5
⎯ ⎯ ⎯ VO = 5V, IO = 50mA
200
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
250
200
V
V
mA
μA
MHz
0.5
0.5
0.5
0.3 V
600
600
MHz
⎯
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
IO/Il = 50mA/2.5mA
VI = 5V
VCC = 50V, VI = 0V
VCE = 10V, IE = 5mA, f = 100MHz
V
IC = 50μA
V
IC = 1mA
IE = 50μA
V
IE = 50μA
μA
VCB = 50V
μA
VEB = 4V
IC = 50mA, IB = 2.5mA
⎯ IC = 5mA, VCE = 5V
VCE = 10V, IE = -5mA, f = 100MHz
2 of 3
www.diodes.com
DDTD (LO-R1) C
© Diodes Incorporated
Loading...