Diodes DDTCxxxxLP User Manual

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PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ultra-Small Leadless Surface Mount Package

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Part Number R1 (NOM) R2 (NOM)

DDTC123JLP 2.2K 47K
DDTC143ZLP 4.7K 47K
DDTC114YLP 10K 47K

Bottom View

3

C

R

R

1

2

Package Pin Out

Configuration

DDTCxxxxLP (R1≠R2 Series

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: Collector Dot (See Diagram and

Marking Information)

• Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.0009 grams (approximate)

3

C

2

E

1

B

IN

B

1

C

OUT

E

2

3

GND

Device Schematics

1

IN

R

B

1

R

2

OUT

E

2

GND

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic P/N Symbol Value Unit

Supply Voltage

DDTC123JLP

Input Voltage

DDTC114YLP -5 to +40
DDTC123JLP

Output Voltage

DDTC114YLP 70

Maximum Collector Current

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Power Deration above 25 °C
Thermal Resistance, Junction to Ambient Air (Note 3)

(Equivalent to one heated junction of NPN)
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DDTCxxxxLP (R1≠R2 Series)

Document number: DS30755 Rev. 7 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 6 or our website at http://www.diodes.com/datasheets/ap02001.pdf.

VCC

VIN

IO

I

C(MAX

PD

P

de

R

JA

θ

TJ, T

STG

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www.diodes.com

50 V

-5 to +12
V DDTC143ZLP -5 to +30

100

mA DDTC143ZLP 100

100 mA

250 mW

2

mW/°C

500 °C/W

-55 to +150

°C

March 2009

© Diodes Incorporated

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(BR)

(BR)

(BR)

)

X

)

)

)

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)

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Δ

Δ

P, P

O

R

P

T

O

)

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic P/N Symbol Min Typ Max Unit Test Condition

Off Characteristics (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage *
Collector Cutoff Current *
Base Cutoff Current (I

) IBL ⎯ ⎯

BE

Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I

O(OFF

Emitter-Base Cut Off Current
Input-Off Voltage

I

V

CBO

V

CEO

V

EBO

I

CEX

I

CBO
CEO

I

EBO

V

I(OFF

On Characteristics (Note 4)

DDTC123JLP

Base-Emitter Turn-On Voltage*

DDTC143ZLP

V

BE(ON)

DDTC114YLP

DDTC123JLP

Base-Emitter Saturation Voltage*

DDTC143ZLP

V

BE(SAT)

DDTC114YLP

Input-On Voltage

V

I(ON

DDTC123JLP

Input Current

DDTC143ZLP

I

I

DDTC114YLP

DC Current Gain

Collector-Emitter Saturation Voltage
Output On Voltage (Same as V

CE(SAT

Input Resistor +/-30%
Resistor Ratio

) V

h

FE

V

CE(SAT)

O(ON

R1

(R2/R1)
Small Signal Characteristics
Transition Frequency (gain bandwidth product)

*Guaranteed by design
Notes: 4. Short duration pulse test us ed to minimize self-heating effect.

Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02

f

⎯

T

50
50

4.5

⎯ ⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯ ⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

1.1

⎯ ⎯
⎯ ⎯
⎯ ⎯

50

70
125
150
180

⎯ ⎯

⎯ ⎯

⎯ ⎯

-30

-20

250

DDTCxxxxLP (R1≠R2 Series

⎯ ⎯
⎯ ⎯
⎯ ⎯

0.5

0.5

0.5

0.5

0.5 mA

0.5 V

0.85

0.85

0.95

0.98

0.998

0.98

⎯ ⎯

7.2

1.5

7.2

⎯ ⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯ V

0.15 V

0.2 V

0.3

⎯
⎯

30 %

-20 %

⎯

V

IC = 10μA, IE = 0

V

IC = 2mA, IB = 0

V

IE = 50μA, IC = 0

μA

VCE = 50V, V

μA

VCE = 50V, V

μA

VCB = 50V, IE = 0

μA

VCE = 50V, IB = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 100μA

V

VCE = 5V, IC = 2mA

V

IC = 10mA, IB = 1mA, VCE=5V

V

VO = 0.3V, IC = 5mA

mA

VI = 5V

V

CE

V

CE

V

CE

V

CE
CE

= 10mA, IB = 1mA

I

C

IC = 50mA, IB = 5mA
IJ = 2.5mA, IO = 50mA

⎯
⎯

MHz

VCE = 10V, IE = 5mA, f = 100MHz

EB(OFF
EB(OFF

= 5V, IC = 1mA
= 5V, IC = 2mA
= 5V, IC = 5mA
= 5V, IC = 10mA
= 5V, IC = 50mA

= 3.0V
= 3.0V

Typical Characteristics Curves @T

300

= 25°C unless otherwise specified

A

250

N (mW

200

I
A

150

DISSI
WE

100

D

50

R = 500 C/W

°

θ

JA

0

0 25 50 75 100 125 150 175

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power D issipa ti on vs. Ambien t Temperatur e

(Note 3)

DDTCxxxxLP (R1≠R2 Series)

Document number: DS30755 Rev. 7 - 2

2 of 7

www.diodes.com

March 2009

© Diodes Incorporated

)

C CUR

REN

T GAIN

C

O

CTO

R CUR

REN

T

PUT VOLTAG

T

T

R VO

TAG

Characteristics Curves of DDTC123JLP @T

350

V = 5V

300

250

T = 150 C

A

T = 85 C

°

A

°

200

T = 25 C

A

150

100

FE

h, D

T = -55 C

A

50

0

0.1 1 10 100 1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 2 Typical DC Current Gain vs. Collector Current

0.15

I = 3.5mA

B

I = 3.0mA

B

I = 4.0mA

B

I = 4.5mA

0.12

(A)

0.09

CE

°

°

B

I = 5.0mA

B

DDTCxxxxLP (R1≠R2 Series

= 25°C unless otherwise specified

A

SATURATION VOLTAGE (V)

CE(SAT)

V , COLLECTOR EMITTER

0.1 1 10 100

2

1.8

1.6

1.4

E (V)

1.2

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical Collector Emitter Saturation Voltage

T = 85 C

°

A

T = -55 C

A

vs. Collector Curr ent

V = 0.3V

I = 5mA

O

I/I = 10

CB

T = 150 C

A

T = 25 C

A

°

O

°

°

0.8

0.6

I(ON)

V, IN

0.4

1

LLE

I,

0.06

0.03

C

I = 1.0mA

B

I = 0.5mA

B

I = 1.5mA

B

I = 2.0mA

B

I = 2.5mA

B

0.2

0

012345678910

V , COLLECTOR EMITTER VOLTAGE (V)

CE

Fig. 4 Typical Collector Current vs. Collector Emitter Voltage

0

-60 -30 0 30 60 90 120 150

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 5 Typical Input Voltage vs. Ambient T emperature

30

4.5

V = 5V

CE

27

I/I = 10

CB

24

E (V)

L

3

E

21
18

15
12

T = 25 C

°

1.5

T = -55 C

A

BE

V , BASE EMI

0

0.1 1 10 100

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base Emitter Voltage vs. C ollecto r Cu r r ent

DDTCxxxxLP (R1≠R2 Series)

Document number: DS30755 Rev. 7 - 2

A

°

T = 85 C

A

9

BE(SAT)

V , BASE EMITTER

SATURATION VOLTAGE (V)

6

T = 150 C

°

°

A

3
0

0.1 1 10 100

I , COLLECTOR CURRENT (mA)

C

Fig. 7 Typical Base Emitter Saturation Voltage

vs. Collector Current

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T = -55 C

A

T = 25 C

°

A

°

T = 85 C

T = 150 C

A

°

A

© Diodes Incorporated

°

March 2009