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PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Part Number R1 (NOM) R2 (NOM)
DDTC123JLP 2.2K 47K
DDTC143ZLP 4.7K 47K
DDTC114YLP 10K 47K
Bottom View
3
C
R
R
1
2
Package Pin Out
Configuration
DDTCxxxxLP (R1≠R2 Series
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: Collector Dot (See Diagram and
Marking Information)
• Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.0009 grams (approximate)
3
C
2
E
1
B
IN
B
1
C
OUT
E
2
3
GND
Device Schematics
1
IN
R
B
1
R
2
OUT
E
2
GND
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic P/N Symbol Value Unit
Supply Voltage
DDTC123JLP
Input Voltage
DDTC114YLP -5 to +40
DDTC123JLP
Output Voltage
DDTC114YLP 70
Maximum Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Power Deration above 25 °C
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of NPN)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on page 6 or our website at http://www.diodes.com/datasheets/ap02001.pdf.
VCC
VIN
IO
I
C(MAX
PD
P
de
R
JA
θ
TJ, T
STG
1 of 7
www.diodes.com
50 V
-5 to +12
V DDTC143ZLP -5 to +30
100
mA DDTC143ZLP 100
100 mA
250 mW
2
mW/°C
500 °C/W
-55 to +150
°C
March 2009
© Diodes Incorporated
Page 2
)
(BR)
(BR)
(BR)
)
X
)
)
)
)
)
)
Δ
Δ
P, P
O
R
P
T
O
)
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic P/N Symbol Min Typ Max Unit Test Condition
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage *
Collector Cutoff Current *
Base Cutoff Current (I
) IBL ⎯ ⎯
BE
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I
O(OFF
Emitter-Base Cut Off Current
Input-Off Voltage
I
V
CBO
V
CEO
V
EBO
I
CEX
I
CBO
CEO
I
EBO
V
I(OFF
On Characteristics (Note 4)
DDTC123JLP
Base-Emitter Turn-On Voltage*
DDTC143ZLP
V
BE(ON)
DDTC114YLP
DDTC123JLP
Base-Emitter Saturation Voltage*
DDTC143ZLP
V
BE(SAT)
DDTC114YLP
Input-On Voltage
V
I(ON
DDTC123JLP
Input Current
DDTC143ZLP
I
I
DDTC114YLP
DC Current Gain
Collector-Emitter Saturation Voltage
Output On Voltage (Same as V
CE(SAT
Input Resistor +/-30%
Resistor Ratio
) V
h
FE
V
CE(SAT)
O(ON
R1
(R2/R1)
Small Signal Characteristics
Transition Frequency (gain bandwidth product)
*Guaranteed by design
Notes: 4. Short duration pulse test us ed to minimize self-heating effect.
Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
f
⎯
T
50
50
4.5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
1.1
⎯ ⎯
⎯ ⎯
⎯ ⎯
50
70
125
150
180
⎯ ⎯
⎯ ⎯
⎯ ⎯
-30
-20
250
DDTCxxxxLP (R1≠R2 Series
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.5
0.5
0.5
0.5
0.5 mA
0.5 V
0.85
0.85
0.95
0.98
0.998
0.98
⎯ ⎯
7.2
1.5
7.2
⎯ ⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯ V
0.15 V
0.2 V
0.3
⎯
⎯
30 %
-20 %
⎯
V
IC = 10μA, IE = 0
V
IC = 2mA, IB = 0
V
IE = 50μA, IC = 0
μA
VCE = 50V, V
μA
VCE = 50V, V
μA
VCB = 50V, IE = 0
μA
VCE = 50V, IB = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 100μA
V
VCE = 5V, IC = 2mA
V
IC = 10mA, IB = 1mA, VCE=5V
V
VO = 0.3V, IC = 5mA
mA
VI = 5V
V
CE
V
CE
V
CE
V
CE
CE
= 10mA, IB = 1mA
I
C
IC = 50mA, IB = 5mA
IJ = 2.5mA, IO = 50mA
⎯
⎯
MHz
VCE = 10V, IE = 5mA, f = 100MHz
EB(OFF
EB(OFF
= 5V, IC = 1mA
= 5V, IC = 2mA
= 5V, IC = 5mA
= 5V, IC = 10mA
= 5V, IC = 50mA
= 3.0V
= 3.0V
Typical Characteristics Curves @T
300
= 25°C unless otherwise specified
A
250
N (mW
200
I
A
150
DISSI
WE
100
D
50
R = 500 C/W
°
θ
JA
0
0 25 50 75 100 125 150 175
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power D issipa ti on vs. Ambien t Temperatur e
(Note 3)
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
2 of 7
www.diodes.com
March 2009
© Diodes Incorporated
Page 3
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C CUR
REN
T GAIN
C
O
CTO
R CUR
REN
T
PUT VOLTAG
T
T
R VO
TAG
Characteristics Curves of DDTC123JLP @T
350
V = 5V
300
250
T = 150 C
A
T = 85 C
°
A
°
200
T = 25 C
A
150
100
FE
h, D
T = -55 C
A
50
0
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical DC Current Gain vs. Collector Current
0.15
I = 3.5mA
B
I = 3.0mA
B
I = 4.0mA
B
I = 4.5mA
0.12
(A)
0.09
CE
°
°
B
I = 5.0mA
B
DDTCxxxxLP (R1≠R2 Series
= 25°C unless otherwise specified
A
SATURATION VOLTAGE (V)
CE(SAT)
V , COLLECTOR EMITTER
0.1 1 10 100
2
1.8
1.6
1.4
E (V)
1.2
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical Collector Emitter Saturation Voltage
T = 85 C
°
A
T = -55 C
A
vs. Collector Curr ent
V = 0.3V
I = 5mA
O
I/I = 10
CB
T = 150 C
A
T = 25 C
A
°
O
°
°
0.8
0.6
I(ON)
V, IN
0.4
1
LLE
I,
0.06
0.03
C
I = 1.0mA
B
I = 0.5mA
B
I = 1.5mA
B
I = 2.0mA
B
I = 2.5mA
B
0.2
0
012345678910
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current vs. Collector Emitter Voltage
0
-60 -30 0 30 60 90 120 150
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 5 Typical Input Voltage vs. Ambient T emperature
30
4.5
V = 5V
CE
27
I/I = 10
CB
24
E (V)
L
3
E
21
18
15
12
T = 25 C
°
1.5
T = -55 C
A
BE
V , BASE EMI
0
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base Emitter Voltage vs. C ollecto r Cu r r ent
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
A
°
T = 85 C
A
9
BE(SAT)
V , BASE EMITTER
SATURATION VOLTAGE (V)
6
T = 150 C
°
°
A
3
0
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base Emitter Saturation Voltage
vs. Collector Current
3 of 7
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T = -55 C
A
T = 25 C
°
A
°
T = 85 C
T = 150 C
A
°
A
© Diodes Incorporated
°
March 2009
Page 4
)
C CUR
REN
T G
N
C
O
CTO
R CUR
RENT
PUT VOLTAG
T
T
R VOLT
G
Characteristics Curves of DDTC143ZLP @T
350
T = 150 C
°
300
250
AI
200
A
T = 85 C
°
A
T = 25 C
A
150
T = -55 C
FE
100
h, D
A
50
0
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical DC Current Gain vs. Collector Current
0.05
°
°
V = 5V
CE
DDTCxxxxLP (R1≠R2 Series
= 25°C unless otherwise specified
A
100
I/I = 10
CB
10
1
0.1
SATURATION VOLTAGE (V)
CE(SAT)
V , COLLECTOR EMITTER
0.01
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
Fig. 9 Typical Collector Emitter Saturation Voltage
15
C
T = 150 C
°
A
T = 85 C
°
A
T = 25 C
T = -55 C
A
A
°
vs. Collector Current
°
0.04
(A)
0.03
0.02
LLE
C
I,
0.01
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 10 Typical Collector Current vs. Collector Emitter Voltage
10
V = 5V
9
CE
8
E (V)
7
A
6
E
5
12
E (V)
9
6
I(ON)
V, IN
3
T = -55 C
A
0
0.1 1 10 100
I , OUTPUT CURRENT (mA)
C
°
T = 25 C
°
A
T = 150 C
A
T = 85 C
A
Fig. 11 Typica l Input Voltage vs . Out put Cur r ent
30
I/I = 10
CB
27
24
21
18
15
°
°
4
3
2
BE
V , BASE EMI
1
0
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
T = -55 C
A
Fig. 12 Typical Base Emitter Voltage vs. Collector Current
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
°
T = 25 C
°
A
T = 85 C
°
A
T = 150 C
A
°
4 of 7
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12
9
BE(SAT)
V , BASE EMITTER
SATURATION VOLTAGE (V)
6
3
0
0.1110100
I , COLLECTOR CURRENT (mA)
C
T = 25 C
A
T = -55 C
A
°
°
T = 85 C
A
T = 150 C
°
°
A
Fig. 13 Typical Base Emitter Saturation Voltage
vs. Collector Current
March 2009
© Diodes Incorporated
Page 5
)
C
CUR
RENT G
C
O
CTO
R CUR
RENT
PUT VOLTAG
T
T
R VOLT
G
Characteristics Curves of DDTC114YLP @T
350
V = 5V
CE
300
250
AIN
200
150
FE
100
h, D
50
0
0.1 1 10 100 1,000
Fig. 14 Typical DC Current Gain vs. Collector Current
0.1
I = 0.8mA
B
I = 0.7mA
B
I = 0.6mA
B
B
I = 0.9mA
(A)
0.09
0.08
I = 0.5mA
0.07
0.06
T = 150 C
°
A
T = 85 C
°
A
T = 25 C
°
A
T = -55 C
°
A
I , COLLECTOR CURRENT (mA)
C
I = 1.0mA
B
B
I = 0.4mA
B
I = 0.3mA
B
DDTCxxxxLP (R1≠R2 Series
= 25°C unless otherwise specified
A
10
I/I = 10
CB
1
0.1
SATURATION VOLTAGE (V)
CE(SAT)
V , COLLECTOR EMITTER
0.01
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
Fig. 15 Typical Collector Emitter Saturation Voltage
1.5
1.2
E (V)
0.9
C
T = 150 C
T = 85 C
A
T = -55 C
A
°
T = 25 C
°
A
vs. Collecto r Cu r re nt
°
A
V = 0.3V
°
O
I = 5mA
O
0.05
I = 0.2mA
LLE
I,
0.04
0.03
C
0.02
B
I = 0.1mA
B
V , IN
0.6
I(ON)
0.3
0.01
0
012345678910
V , COLLECTOR EMIT TER VOLTAGE (V)
CE
Fig. 16 Typical Collector Current vs. Collector Emitter Voltage
15
V = 5V
CE
13.5
12
E (V)
10.5
A
9
7.5
E
6
4.5
3
BE
V , BASE EMI
1.5
T = -55 C
0
T = 25 C
°
A
°
A
T = 150 C
°
T = 85 C
A
A
°
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
Fig. 18 Typical Base Emitter Voltage vs. Collector Current
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
C
5 of 7
www.diodes.com
0
-60 -30 0 30 60 90 120 150
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 17 Typical Input Voltage vs. Ambient Temperat ur e
30
I/I = 10
27
CB
24
21
18
15
12
9
BE(SAT )
V , BASE EMITTER
SATURA TION VOL TAGE (V)
6
3
0
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
T = -55 C
°
A
T = 25 C
°
A
T = 85 C
A
T = 150 C
A
°
°
Fig. 19 Typical Base Emitter Saturation Voltage
vs. Collector Current
March 2009
© Diodes Incorporated
Page 6
)
Ordering Information (Note 5)
Part Number
DDTC123JLP-7
DDTC143ZLP-7
DDTC114YLP-7
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Case Packaging
DFN1006-3 3000/Tape & Reel
DFN1006-3 3000/Tape & Reel
DFN1006-3 3000/Tape & Reel
Marking Information
Nx
Nx = Product Type Marking Code:
DDTC123JLP = N0
DDTC143ZLP = N1
DDTC114YLP = N2
Dot Denotes Collector, Pin 3
Package Outline Dimensions
A
A1
D
b1
b2
E
L2
L1L3
e
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
All Dimensions in mm
Suggested Pad Layout
X
1
G2
X
C
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
G1
Y
Z
Y 0.4
C 0.7
DDTCxxxxLP (R1≠R2 Series
DFN1006-3
⎯ ⎯
⎯ ⎯
0.35
0.40
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
6 of 7
www.diodes.com
March 2009
© Diodes Incorporated
Page 7
)
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DDTCxxxxLP (R1≠R2 Series
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
7 of 7
www.diodes.com
March 2009
© Diodes Incorporated
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