Diodes DDTC-LO-R1-E User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (DDTA)
• Built-In Biasing Resistors
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Solderable per MIL-STD-202,
Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe)
• Terminal Connections: See Diagram
• Marking Information: See Table Below & Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DDTC122LE
DDTC142JE
DDTC122TE
DDTC142TE
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
N81
N82
N83
N84
DDTC (LO-R1) E
NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR
A
TOP VIEW
G
H
K
J
Schematic and Pin Diagram
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
C
B
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
N
M
K 0.60 0.80 0.75
L 0.10 0.30 0.22
D
L
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
All Dimensions in mm
OUT
3
C
R1
B
R2
E
21
IN
GND(0)
⎯
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTC122LE
DDTC142JE
Input Voltage, (2) to (1) DDTC122TE
DDTC142TE
Output Current All
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30404 Rev. 6 - 2
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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VCC
VIN
V
EBO (MAX)
IC
Pd
R
θ
Tj, T
JA
STG
-5 to +6
-5 to +6
-55 to +150
50 V
V
5 V
100 mA
150 mW
625
°C/W
°C
DDTC (LO-R1) E
© Diodes Incorporated
P, P
OWER
P
T
O
Electrical Characteristics @T
= 25°C unless otherwise specified R1, R2 Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
DDTC122LE
Input Voltage
DDTC142JE
DDTC122LE
DDTC142JE
Output Voltage
Input Current
DDTC122LE
DDTC142JE
Output Current
DC Current Gain
DDTC122LE
DDTC142JE
Gain-Bandwidth Product*
* Transistor - For Reference Only
Electrical Characteristics @T
= 25°C unless otherwise specified R1-Only Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTC122TE
DDTC142TE
Collector Cutoff Current
Emitter Cutoff Current
DDTC122TE
DDTC142TE
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DDTC122TE
DDTC142TE
V
V
V
l(off)
l(on)
O(on)
0.3
0.3
⎯ ⎯
⎯ ⎯
Il ⎯ ⎯
I
⎯ ⎯
O(off)
Gl
56
56
fT ⎯
BV
BV
BV
I
I
V
CE(sat)
hFE
CBO
CEO
EBO
CBO
EBO
50
40
5
⎯ ⎯
⎯
⎯
⎯ ⎯
100
100
28
13
V
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
V
VO = 0.3V, IO = 20mA
IO/Il = 5mA/0.25mA
mA
VI = 5V
μA
VCC = 50V, VI = 0V
⎯ ⎯
2.0
2.0
0.3V V
0.5
⎯ ⎯ ⎯ VO = 5V, IO = 10mA
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
250
MHz
⎯
0.5
0.5
0.5
0.3 V
600
600
VCE = 10V, IE = 5mA, f = 100MHz
V
IC = 50μA
V
IC = 1mA
IE = 50μA
V
IE = 50μA
μA
VCB = 50V
μA
VEB = 4V
IC = 5mA, IB = 0.25mA
⎯ IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
* Transistor - For Reference Only
250
fT ⎯
200
⎯
MHz
VCE = 10V, IE = -5mA, f = 100MHz
200
N (mW)
I
150
A
DISSI
100
d
50
0
-50
050100
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Derating Curve
DS30404 Rev. 6 - 2
°
150
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DDTC (LO-R1) E
© Diodes Incorporated
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