y
PRE-BIASED (R1 = R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Part Number R1 (NOM) R2 (NOM) Marking
DDTC114ELP 10K
DFN1006-3
Bottom View
10K
B
E
Top View
Pin-Out
N5
C
DDTC114ELP
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0009 grams (approximate)
OUT
C
3
1
R
2
Device S
B
E
2
GND
mbol
IN
1
R
B
IN
1
Equivalent Inverter
E
2
Circuit
C
GND
3
OUT
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DDTC114ELP-7 N5 7 8 3,000
DDTC114ELP-7B N5 7 8 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DDTC114ELP
Document number: DS30945 Rev. 7 - 2
DDTC114ELP-7 DDTC114ELP-7B
N5N5
Top View
Dot Denotes
Collector Side
Top View
Bar Denotes Base
and Emitter Side
1 of 5
www.diodes.com
N5 = Product Type Marking Code
February 2011
© Diodes Incorporated
)
r
)
X
)
)
)
)
)
)
Ω
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Collector Current
V
V
I
I
C(MAX
CC
O
IN
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Power Derating above 25°C
Thermal Resistance, Junction to Ambient Air (Note 4)
(Equivalent to one heated junction of NPN)
Operating and Storage Temperature Range
P
D
P
de
R
JA
θ
T
, T
J
STG
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current (I
) IBL ⎯ ⎯
BE
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I
O(OFF
Emitter-Base Cut Off Current
Input Off Voltage
BV
CBO
BV
CEO
BV
EBO
I
⎯ ⎯
CEX
I
⎯ ⎯
CBO
I
⎯ ⎯
CEO
I
⎯ ⎯
EBO
V
I(off
50
50
5
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.5
0.5
0.5
1
0.4 mA
1.16 0.5 V
On Characteristics (Notes 5 & 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Input-On Voltage
Input Current
Output On Voltage (Same as V
CE(sat
) V
h
V
CE(sat)
V
BE(on)
V
BE(sat)
V
FE
I(on
I
I
O(on
10
15
60
100
90
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
2.5 1.6
⎯ ⎯
⎯ ⎯
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ VCE = 5V, IC = 70mA
0.15 V
0.2 V
0.25 V
0.25 V
0.3 V
0.85 V
0.95 V
0.98 V
1.2 V
⎯
0.88 mA
0.3 V
Input Resistance R1 7 10 13
Resistance Ratio (R2/R1) 0.8 1 1.2
Small Signal Characteristics
Current Gain-Bandwidth Product
Notes: 4. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”
5. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width tp<300 μs, Duty Cycle, d ≤ 2%.
6. Guaranteed by design.
f
⎯
T
250
⎯
50 V
-10 to +40 V
50 mA
100 mA
250 mW
2 mW/°C
500 °C/W
-55 to +150 °C
V
IC = 10μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 50μA, IC = 0
μA
μA
μA
μA
= 50V, V
V
CE
= 50V, V
V
CE
= 50V, IE = 0
V
CB
= 50V, IB = 0
V
CB
EB(OFF
EB(OFF
VEB = 4V, IC = 0
VCC = 5V, IO = 100uA
= 5V, IC = 1mA
CE
= 5V, IC = 2mA
CE
= 5V, IC = 10mA
CE
= 5V, IC = 50mA
CE
I
= 10mA, IB = 1mA
C
IC = 50mA, IB = 5mA
IC = 50mA, IB = 2.5mA
IC = 50mA, IB = 10mA
IC = 70mA, IB = 10mA
V
= 5V, IC = 2mA
CE
VCE = 5V, IC = 10mA
I
= 10mA, IB = 1mA, VCE = 5V
C
IC = 50mA, IB = 5mA, VCE = 5V
V
VO = 0.3V, IO = 50mA
V
= 5V
I
II = 2.5mA, IO = 50mA
K
⎯ ⎯
MHz
VCE = 10V, IE = 5mA, f = 1MHz
DDTC114ELP
= 3.0V
= 3.0V
⎯
DDTC114ELP
Document number: DS30945 Rev. 7 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
P, P
OWER
PATIO
C CUR
RENT
G
O
O
R
R
R
P
U
T
OLT
G
T
TER
OLT
G
DDTC114ELP
N (mW)
300
250
200
AIN
250
200
150
T = 150 C
A
T = 85 C
°
A
V = 5V
CE
°
150
T = 25 C
°
DISSI
100
A
100
T = -55 C
D
50
R = 500 C/W
°
θ
JA
0
0 25 50 75 100 125 150 175
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power D issipati o n vs. Ambient Temper ature
10
I/I = 10
CB
1
FE
h, D
50
0
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical DC Current Gain vs. Collector Current
ENT (A)
0.1
0.09
0.08
0.07
I = 0.7mA
B
I = 0.6mA
B
I = 0.9mA
B
I = 0.8mA
B
A
°
I = 1.0mA
B
I = 0.4mA
B
I = 0.5mA
B
0.06
I = 0.2mA
B
I = 0.1mA
B
I = 0.3mA
B
T = 150 C
°
A
0.1
SATURATION VOLTAGE (V)
CE(SAT)
V , COLLECTOR-EMITTER
0.01
T = 85 C
°
A
T = -55 C
°
A
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical Collector Emitter Saturation Voltage vs.
Collector Current
2
V = 0.3V
1.8
O
I = 5mA
O
1.6
1.4
E (V)
A
1.2
1
V
0.8
T = 25 C
A
CU
0.05
0.04
LLECT
0.03
C
0.02
I, C
°
0.01
0
01 2 34 56 78 910
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 4
Typical Collect or Current vs.
Collector Emitter Voltage
15
13.5
E (V)
A
10.5
V
12
9
V = 5V
CE
7.5
6
0.6
I(ON)
V, IN
0.4
0.2
0
-60-300306090120150
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 5 Typical Input Voltage vs. Ambient Temperature
4.5
3
BE
V , BASE-EMI
T = -55 C
A
°
T = 25 C
°
A
1.5
T = 85 C
°
0
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
A
Fig. 6 Typical Base-Emitter Voltage vs.
Collector Current
T = 150 C
A
°
DDTC114ELP
Document number: DS30945 Rev. 7 - 2
3 of 5
www.diodes.com
February 2011
© Diodes Incorporated
30
I/I = 10
27
CB
24
21
18
15
12
BE(SAT)
9
V , BASE-EMITTER
SATURATION VOLTAGE (V)
6
3
0
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base Emitter Saturation Voltage
vs. Collector Current
Package Outline Dimensions
Suggested Pad Layout
DDTC114ELP
Document number: DS30945 Rev. 7 - 2
A
A1
D
b2
E
L2
X
1
G2
X
Y
DDTC114ELP
DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
b1
e
L1L3
C
Dimensions Value (in mm)
G1
Z
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E 0.55 0.675 0.60
e
⎯ ⎯
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
⎯ ⎯
All Dimensions in mm
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
0.35
0.40
February 2011
© Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
DDTC114ELP
DDTC114ELP
Document number: DS30945 Rev. 7 - 2
5 of 5
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February 2011
© Diodes Incorporated
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