Diodes DDTC114ELP User Manual

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PRE-BIASED (R1 = R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ultra-Small Leadless Surface Mount Package

• Ideally Suited for Automated Assembly Processes

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Part Number R1 (NOM) R2 (NOM) Marking

DDTC114ELP 10K

DFN1006-3

Bottom View

10K

B

E

Top View

Pin-Out

N5

C

DDTC114ELP

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0009 grams (approximate)

OUT

C

3

1

R

2

Device S

B

E

2

GND

mbol

IN

1

R

B

IN

1

Equivalent Inverter

E

2

Circuit

C

GND

3

OUT

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DDTC114ELP-7 N5 7 8 3,000

DDTC114ELP-7B N5 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DDTC114ELP

Document number: DS30945 Rev. 7 - 2

DDTC114ELP-7 DDTC114ELP-7B

N5N5

Top View

Dot Denotes

Collector Side

Top View

Bar Denotes Base

and Emitter Side

1 of 5

www.diodes.com

N5 = Product Type Marking Code

February 2011

© Diodes Incorporated

)

r

)

X

)

)

)

)

)

)

Ω

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Collector Current

V

V

I

I

C(MAX

CC

O

IN

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Power Derating above 25°C
Thermal Resistance, Junction to Ambient Air (Note 4)

(Equivalent to one heated junction of NPN)
Operating and Storage Temperature Range

P

D

P

de

R

JA

θ

T

, T

J

STG

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Off Characteristics (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current (I

) IBL ⎯ ⎯

BE

Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I

O(OFF

Emitter-Base Cut Off Current
Input Off Voltage

BV

CBO

BV

CEO

BV

EBO

I

⎯ ⎯

CEX

I

⎯ ⎯

CBO

I

⎯ ⎯

CEO

I

⎯ ⎯

EBO

V

I(off

50
50

5

⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯

0.5

0.5

0.5
1

0.4 mA

1.16 0.5 V

On Characteristics (Notes 5 & 6)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

Base-Emitter Saturation Voltage
Input-On Voltage

Input Current
Output On Voltage (Same as V

CE(sat

) V

h

V

CE(sat)

V

BE(on)

V

BE(sat)

V

FE

I(on

I

I

O(on

10
15
60

100

90

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

2.5 1.6

⎯ ⎯
⎯ ⎯

⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ VCE = 5V, IC = 70mA

0.15 V

0.2 V

0.25 V

0.25 V

0.3 V

0.85 V

0.95 V

0.98 V

1.2 V

⎯

0.88 mA

0.3 V

Input Resistance R1 7 10 13
Resistance Ratio (R2/R1) 0.8 1 1.2

Small Signal Characteristics

Current Gain-Bandwidth Product

Notes: 4. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”

5. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width tp<300 μs, Duty Cycle, d ≤ 2%.

6. Guaranteed by design.

f

⎯

T

250

⎯

50 V

-10 to +40 V
50 mA

100 mA

250 mW

2 mW/°C

500 °C/W

-55 to +150 °C

V

IC = 10μA, IE = 0

V

IC = 1.0mA, IB = 0

V

IE = 50μA, IC = 0

μA
μA
μA
μA

= 50V, V

V

CE

= 50V, V

V

CE

= 50V, IE = 0

V

CB

= 50V, IB = 0

V

CB

EB(OFF
EB(OFF

VEB = 4V, IC = 0
VCC = 5V, IO = 100uA

= 5V, IC = 1mA

CE

= 5V, IC = 2mA

CE

= 5V, IC = 10mA

CE

= 5V, IC = 50mA

CE

I

= 10mA, IB = 1mA

C

IC = 50mA, IB = 5mA
IC = 50mA, IB = 2.5mA
IC = 50mA, IB = 10mA
IC = 70mA, IB = 10mA
V

= 5V, IC = 2mA

CE

VCE = 5V, IC = 10mA
I

= 10mA, IB = 1mA, VCE = 5V

C

IC = 50mA, IB = 5mA, VCE = 5V

V

VO = 0.3V, IO = 50mA
V

= 5V

I

II = 2.5mA, IO = 50mA

K

⎯ ⎯

MHz

VCE = 10V, IE = 5mA, f = 1MHz

DDTC114ELP

= 3.0V
= 3.0V

⎯

DDTC114ELP

Document number: DS30945 Rev. 7 - 2

2 of 5

www.diodes.com

February 2011

© Diodes Incorporated