Diodes DDTB-xxxx-U User Manual
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (DDTD)
• Built-In Biasing Resistors, R1, R2
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
NEW ODOD P PR UCT T R UC
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Code & Date Code Information: See Table
Below & Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R1 (NOM) R2 (NOM) Type Code
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
P60
P61
P62
P63
P64
P65
P66
P67
P69
P70
P71
P72
DDTB (xxxx) UDDTB (xxxx) U
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
A
B
G
H
K
J
Schematic and Pin Configuration
ED
OUT
3
R1
B
IN
C
M
L
C
R2
E
21
GND(+)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimensions in mm
0° 8°
Maximum Ratings @T
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
Input Voltage, (2) to (1) DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
Output Current All
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30383 Rev. 6 - 2
= 25°C unless otherwise specified
A
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1 of 3
VCC
VIN
V
EBO (MAX)
IC
Pd
R
θ
Tj, T
JA
STG
-50 V
+10 to -10
+10 to -12
+10 to -30
+10 to -40
+5 to -5
+5 to -10
+5 to -12
+6 to -20
-500 mA
200 mW
625
-55 to +150
-5 V
°C/W
°C
DDTD (xxxx) U
© Diodes Incorporated
V
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
NEW PRODUCT
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
= 25°C unless otherwise specified R1, R2 Types
A
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
V
l(off)
V
l(on)
V
O(on)
Il ⎯ ⎯
I
O(off)
Gl
fT
-0.5
-0.5
-0.5
-0.5
-0.5
⎯ ⎯
-0.3
-0.3
-0.3
⎯ ⎯
⎯ ⎯
⎯ ⎯
33
39
47
56
47
⎯ ⎯ ⎯ VO = -5V, IO = -50mA
56
56
56
200
⎯
-3.0
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
-0.3V V
-7.2
-3.8
-1.8
-0.88
mA
-28
-7.2
-3.6
-2.4
-0.5
μA
MHz
⎯
V
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -10mA
V
VO = -0.3V, IO = -30mA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
IO/Il = -50mA/-2.5mA
VI = -5V
VCC = -50V, VI = 0V
VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics @T
= 25°C unless otherwise specified R1-Only, R2-Only Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
Collector Cutoff Current
DDTB123TU
Emitter Cutoff Current
DDTB143TU
DDTB114TU
DDTB114GU
Collector-Emitter Saturation Voltage
DDTB123TU
DC Current Transfer Ratio
DDTB143TU
DDTB114TU
DDTB114GU
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30383 Rev. 6 - 2
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
⎯ ⎯
CE(sat)
hFE
fT
2 of 3
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-50
-40
-5
⎯ ⎯
⎯
⎯
⎯
-300
100
100
100
56
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
-580
250
250
250
⎯
200
-0.5
μA
-0.5
-0.5
μA
-0.5
-0.3 V
600
600
⎯
600
⎯
MHz
⎯
V
IC = -50μA
V
IC = -1mA
IE = -50μA
IE = -50μA
V
IE = -50μA
IE = -720μA
VCB = -50V
VEB = -4V
IC = -50mA, IB = -2.5mA
IC = -5mA, VCE = -5V
VCE = -10V, IE = 5mA, f = 100MHz
DDTD (xxxx) U
© Diodes Incorporated
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