Diodes DDTB-LO-R1-U User Manual

DDTB (LO-R1) UDDTB (LO-R1) U

PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Types Available (DDTD)

• Built-In Biasing Resistors

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3 & 4)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, "Green" Molding

Compound, Note 4. UL Flammability Classification
Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

NEW ODOD P PR UCT T R UC

• Terminals: Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe)

• Marking Information: See Table Below & Page 3

• Ordering Information: See Page 3

• Weight: 0.006 grams (approximate)

P/N R1 (NOM) R2 (NOM) Type Code

0.22KΩ

0.47KΩ

0.22KΩ

0.47KΩ

10KΩ

10KΩ
OPEN
OPEN

DDTB122LU
DDTB142JU
DDTB122TU
DDTB142TU

P75
P76
P77
P78

A

G
H

K

J

B

ED

OUT

3

C

R1

B

IN

Schematic and Pin Configuration

C

R2

L

E

21

GND(+)

SOT-323

Dim Min Max

A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40

M

H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18

0° 8°

α

All Dimensions in mm

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTB122LU

DDTB142JU
Input Voltage, (2) to (1) DDTB122TU
DDTB142TU

Output Current All
Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.

Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30400 Rev. 6 - 2

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to

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VCC

VIN

V

EBO (MAX)

IC

Pd

R

θ

Tj, T

JA

STG

-50 V

+5 to -6
+5 to -6

-5 V

-500 mA
200 mW

625

-55 to +150

V

°C/W

°C

DDTB (LO-R1) U

© Diodes Incorporated

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

DDTB122LU

Input Voltage

DDTB142JU
DDTB122LU

DDTB142JU

Output Voltage

Input Current

DDTB122LU
DDTB142JU

Output Current

DC Current Gain

DDTB122LU
DDTB142JU

Gain-Bandwidth Product*

NEW PRODUCT

* Transistor - For Reference Only

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage DDTB122TU
DDTB142TU

Collector Cutoff Current

Emitter Cutoff Current

DDTB122TU
DDTB142TU

Collector-Emitter Saturation Voltage
DC Current Transfer Ratio

DDTB122TU
DDTB142TU

Gain-Bandwidth Product*

* Transistor - For Reference Only

DS30400 Rev. 6 - 2

= 25°C unless otherwise specified R1, R2 Types

A

V

V

V

l(off)

l(on)

O(on)

-0.3

-0.3

⎯ ⎯

⎯ ⎯

⎯ ⎯

-2.0

-2.0

-0.3V V

Il ⎯ ⎯

I

O(off)

Gl
fT

= 25°C unless otherwise specified R1 – Only Types

A

BV

CBO

BV

CEO

BV

EBO

I

⎯ ⎯

CBO

I

EBO

V

CE(sat)

hFE

fT

⎯ ⎯
56

56
⎯

-50

-40

-5

⎯
⎯

⎯ ⎯

100
100

⎯

-0.5

⎯ ⎯ ⎯ VO = -5V, IO = -50mA

200

⎯ ⎯
⎯ ⎯

⎯ ⎯

⎯

250
250

200

-28

-13

MHz

⎯

-0.5

-0.5

-0.5

-0.3 V
600

600

⎯

V

VCC = -5V, IO = -100μA

VO = -0.3V, IO = -20mA

V

VO = -0.3V, IO = -20mA

IO/Il = -50mA/-2.5mA

mA

VI = -5V

μA

VCC = -50V, VI = 0V

VCE = -10V, IE = -5mA, f = 100MHz

V

IC = -50μA

V

IC = -1mA
IE = -50μA

V

IE = -50μA

μA

VCB = -50V

μA

VEB = -4V

IC = -50mA, IB = -2.5mA

⎯ IC = -5mA, VCE = -5V

MHz

VCE = -10V, IE = 5mA, f = 100MHz

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DDTB (LO-R1) U

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