Diodes DDTB-LO-R1-C User Manual

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Features

• Epitaxial Planar Die Construction

• Complementary NPN Types Available (DDTD)

• Built-In Biasing Resistors

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 1 and 3)

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

NEW P DUCRO T

• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).

• Marking Information: See Table Below & Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

P/N R1 (NOM) R2 (NOM) Type Code

DDTB122LC
DDTB142JC
DDTB122TC
DDTB142TC

0.22KΩ

0.47KΩ

0.22KΩ

0.47KΩ

10KΩ

10KΩ
OPEN
OPEN

P75
P76
P77
P78

DDTB (LO-R1) C

PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR

A

BTOP VIEW

C

E

D

G

H

K

J

B

IN

Schematic and Pin Diagram

L

OUT

3

C

R1

R2

E

21

GND(+)

M

All Dimensions in mm

SOT-23

Dim Min Max

A 0.37 0.51

B 1.20 1.40

C 2.30 2.50

D 0.89 1.03

E 0.45 0.60

G 1.78 2.05

H 2.80 3.00

J 0.013 0.10

K 0.903 1.10

L 0.45 0.61

M 0.085 0.180

0° 8°

α

Maximum Ratings @T

Characteristic Symbol Value Unit

Supply Voltage, (3) to (2)

Input Voltage, (1) to (2) DDTB122LC
DDTB142JC
Input Voltage, (2) to (1) DDTB122TC
DDTB142TC

Output Current All

Power Dissipation (Note 2)

Thermal Resistance, Junction to Ambient Air (Note 2)

Operating and Storage Temperature Range

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

DS30403 Rev. 6 - 2

2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.

3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

= 25°C unless otherwise specified

A

VCC

VIN

V

EBO (MAX)

IC

PD

R

JA

θ

TJ, T

1 of 3

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STG

-50 V

+5 to -6
+5 to -6

Fire Retardants.

2O3

-5 V

-500 mA

200 mW

625

-55 to +150

V

°C/W

°C

DDTB (LO-R1) C

© Diodes Incorporated

P

P

O

R

P

T

O

N

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage

Output Voltage

Input Current

Output Current

DC Current Gain

Gain-Bandwidth Product*

* Transistor - For Reference Only

NEW PRODUCT

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage DDTB122TC
DDTB142TC

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

= 25°C unless otherwise specified R1, R2 Types

A

DDTB122LC
DDTB142JC

DDTB122LC

DDTB142JC

DDTB122LC
DDTB142JC

DDTB122LC
DDTB142JC

V

l(off)

V

l(on)

V

O(on)

Il ⎯ ⎯

I

O(off)

Gl

fT

= 25°C unless otherwise specified R1- Only Types

A

BV

CBO

BV

CEO

BV

EBO

I

⎯ ⎯

CBO

DDTB122TC
DDTB142TC

DDTB122TC
DDTB142TC

I

V

CE(sat)

hFE

EBO

-0.3

-0.3

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

56
56

⎯

-50

-40

-5

⎯ ⎯ ⎯

200

⎯
⎯

⎯ ⎯

100
100

250
250

-2.0

-2.0

-0.3V V

-28

-13

-0.5

⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

-0.5

-0.5

⎯

-0.5

-0.3 V

600
600

V

V

mA

μA

MHz

V

V

V

μA

μA

⎯

VCC = -5V, IO = -100μA

VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA

IO/Il = -50mA/-2.5mA

VI = -5V

VCC = -50V, VI = 0V

VO = -5V, IO = -50mA

VCE = -10V, IE = -5mA, f = 100MHz

IC = -50μA

IC = -1mA

IE = -50μA
IE = -50μA

VCB = -50V

VEB = -4V

IC = -50mA, IB = -2.5mA

IC = -5mA, VCE = -5V

Gain-Bandwidth Product*

* Transistor - For Reference Only

250

fT ⎯

200

⎯

MHz

VCE = -10V, IE = 5mA, f = 100MHz

200

(mW)

I

150

A

DISSI

100

WE

,

d

50

0

-50

050100

T , AMBIENT TEMPERATURE ( C)

A

Fig. 1 Power Derati ng Curve

DS30403 Rev. 6 - 2

°

150

2 of 3

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DDTB (LO-R1) C

© Diodes Incorporated