Diodes DDTA-UA User Manual
C
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (DDTC)
• Built-In Biasing Resistor, R2 only
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device, (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
NEW PRODUCT
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking: Date Code and Type Code, See Page 3
• Type Code: See Table Below
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R2 (NOM) Type Code
10KΩ
22KΩ
47KΩ
100KΩ
DDTA114GUA
DDTA124GUA
DDTA144GUA
DDTA115GUA
P26
P27
P28
P29
DDTA (R2-ONLY SERIES) UA
PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
C
B
G
H
K
J
B
R
2
SCHEMATIC DIAGRAM
SOT-323
Dim Min Max
A 0.25 0.40
C
B
B 1.15 1.35
C 2.00 2.20
E
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
M
H 1.80 2.20
J 0.0 0.10
L
ED
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α
All Dimens mm ions in
E
0° 8°
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with date code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to date
code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30328 Rev. 6 - 2
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V
CBO
V
CEO
V
EBO
IC (Max)
P
d
R
JA
θ
Tj, T
STG
-50 V
-50 V
-5 V
-100 mA
200 mW
625
-55 to +150
DDTA (R2-ONLY SERIES) UA
°C/W
°C
© Diodes Incorporated
P, P
OWER
PATIO
N
UM C
O
CTO
R VOLTAG
C
C
URR
N
T
G
N
NOR
C, CAP
CITANC
F
2
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DDTA114GUA
Emitter Cutoff Current
DDTA124GUA
DDTA144GUA
DDTA115GUA
Collector-Emitter Saturation Voltage
DDTA114GUA
DC Current Transfer Ratio
DDTA124GUA
DDTA144GUA
DDTA115GUA
Bleeder Resistor (R2) Tolerance ΔR
NEW PRODUCT
Gain-Bandwidth Product*
* Transistor - For Reference Only
Typical Curves – DDTA114GUA
250
200
(mW)
150
BV
BV
BV
I
I
V
CE(sat)
CBO
CEO
EBO
CBO
EBO
h
FE
f
T
-50
-50
⎯ ⎯
⎯ ⎯
V
V
IC = -50μA
IC = -1mA
IE = -720μA, DDTA114GUA
5
⎯ ⎯
IE = -330μA, DDTA124GUA
V
IE = -160μA, DDTA144GUA
IE = -72μA, DDTA115GUA
-0.5
⎯ ⎯
-300
-140
-65
-30
⎯ ⎯
⎯
-580
-260
-130
-58
-0.3 V
μA
VCB = -50V
μA
VEB = -4V
IC = -10mA, IB = -0.5mA
30
56
68
⎯ ⎯ ⎯
IC = -5mA, VCE = -5V
82
2
-30
⎯
250
E (V)
0.1
⎯
1
+30 %
⎯
I/I = 10
CB
VCE = -10V, IE = 5mA,
MHz
f = 100MHz
75 C
°
⎯
-25 C
°
25 C
°
DISSI
LLE
100
0.01
D
50
CE(SAT)
V , MAXIM
0.001
0
10
I , COLLECTOR CURRENT (mA)
C
20
Fig. 2 V vs. I
30
CE(SAT) C
40
50
1
I = 0V
E
1,000
0
-50
050100
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Derating Curve
V = 10
CE
150
10
MALIZED)
(
AI
100
E
)
8
E (p
6
A
4
FE
h, D
10
110
I , COLLECTOR CURRENT (mA)
C
Fig. 3 DC Current Gain
DS30328 Rev. 6 - 2
100
2 of 3
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OB
2
0
020
10
5
V , REVERSE BIAS VOLTAGE (V)
R
Fig. 4 Output Capacitance
15
DDTA (R2-ONLY SERIES) UA
25
© Diodes Incorporated
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