Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (DDTC)
• Built-In Biasing Resistors
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 & 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
• Compound, Note 4. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
NEW DDU PRORO UCCT P T
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
• Marking Information: See Table Below and Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R1 (NOM) R2 (NOM) Type Code
DDTA122LU
DDTA142JU
DDTA122TU
DDTA142TU
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
DDTA (LO-R1) UDDTA (LO-R1) U
PNP PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR
SOT-323
Dim Min Max
A 0.25 0.40
C
B
B 1.15 1.35
C 2.00 2.20
1
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
M
J 0.0 0.10
K 0.90 1.00
L
ED
L 0.25 0.40
M 0.10 0.18
0° 8°
α
All Dimensions in mm
1 3
2
E
GND (+)
CB
R1
OUT
3
C
IN OUT
R2
E
21
GND(+)
Equivalent Inventer Circuit
P81
P82
P83
P84
A
OUT3
2
IN GND
G
H
K
J
B
IN
Schematic and Pin Configuration
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2) DDTA122LU
DDTA142JU
Input Voltage, (2) to (1) DDTA122TU
DDTA142TU
Output Current All
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30402 Rev. 6 - 2
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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VCC
VIN
V
EBO (MAX)
IC
Pd
R
θ
Tj, T
JA
STG
-50 V
+5 to -6
+5 to -6
-100 mA
200 mW
625
-55 to +150
-5 V
°C/W
°C
DDTA (LO-R1) U
© Diodes Incorporated
V
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
Electrical Characteristics @T
NEW PRODUCT
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTA122TU
DDTA142TU
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
= 25°C unless otherwise specified R1, R2 Types
A
DDTA122LU
DDTA142JU
DDTA122LU
DDTA142JU
DDTA122LU
DDTA142JU
DDTA122LU
DDTA142JU
V
l(off)
V
l(on)
V
O(on)
Il ⎯ ⎯
I
O(off)
Gl
fT
= 25°C unless otherwise specified R1-Only Types
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
DDTA122TU
DDTA142TU
DDTA122TU
DDTA142TU
I
V
CE(sat)
hFE
EBO
fT
-0.3
-0.3
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
56
56
200
⎯
-50
-40
-5
⎯ ⎯ ⎯ VO = -5V, IO = -10mA
⎯ ⎯
⎯
⎯
⎯ ⎯
100
100
⎯
250
250
200
-2.0
-2.0
-0.3V V
-28
-13
-0.5
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.5
-0.5
⎯
-0.5
-0.3 V
600
600
⎯
V
V
mA
μA
MHz
μA
μA
⎯ IC = -1mA, VCE = -5V
MHz
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
IO/Il = -5mA/-0.25mA
VI = -5V
VCC = -50V, VI = 0V
VCE = -10V, IE = -5mA, f = 100MHz
V
IC = -50μA
V
IC = -1mA
IE = -50μA
V
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.25mA
VCE = -10V, IE = 5mA, f = 100MHz
* Transistor - For Reference Only
250
200
N (mW)
150
DISSI
100
WE
d
50
0
-50
050100
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Derating Curve
DS30402 Rev. 6 - 2
°
150
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DDTA (LO-R1) U
© Diodes Incorporated