Diodes DDTA-LO-R1-E User Manual
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available
(DDTC)
• Built-In Biasing Resistors
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
NEW PPRODRODUCT T UC
• Terminals: Finish – Matte Tin Solderable per MIL-STD 202,
Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe)
• Terminal Connections: See Diagram
• Marking Information: See Table Below & Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
P/N R1 (NOM) R2 (NOM) Type Code
DDTA122LE
DDTA142JE
DDTA122TE
DDTA142TE
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
P81
P82
P83
P84
DDTA (LO-R1) EDDTA (LO-R1) E
PNP PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR
A
TOP VIEW
G
H
K
J
Schematic and Pin Diagram
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
C
B
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
N
M
K 0.60 0.80 0.75
L 0.10 0.30 0.22
D
L
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
All Dimensions in mm
OUT
3
C
R1
B
R2
E
21
IN
GND(+)
⎯
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (2) to (3)
Input Voltage, (1) to (2) DDTA122LE
DDTA142JE
Input Voltage, (2) to (1) DDTA122TE
DDTA142TE
Output Current All
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30405 Rev. 6 - 2
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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VCC
VIN
V
EBO (MAX)
IC
Pd
R
θ
Tj, T
JA
STG
+5 to -6
+5 to -6
-55 to +150
-50 V
V
-5 V
-100 mA
150 mW
625
°C/W
°C
DDTA (LO-R1) E
© Diodes Incorporated
P, P
OWER
PATIO
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
NEW PRODUCT
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDTA122TE
DDTA142TE
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
= 25°C unless otherwise specified R1, R2 Types
A
DDTA122LE
DDTA142JE
DDTA122LE
DDTA142JE
DDTA122LE
DDTA142JE
DDTA122LE
DDTA142JE
V
l(off)
V
l(on)
V
O(on)
Il ⎯ ⎯
I
O(off)
Gl
fT
= 25°C unless otherwise specified R1-Only Types
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
DDTA122TE
DDTA142TE
DDTA122TE
DDTA142TE
I
V
CE(sat)
hFE
EBO
-0.3
-0.3
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
56
56
⎯
-50
-40
-5
⎯ ⎯ ⎯
200
⎯ ⎯
⎯
⎯
⎯ ⎯
100
100
250
250
-2.0
-2.0
-0.3V V
-28
-13
-0.5
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-0.5
-0.5
⎯
-0.5
-0.3 V
600
600
V
V
mA
μA
MHz
V
V
V
μA
μA
⎯ IC = -1mA, VCE = -5V
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
IO/Il = -5mA/-0.25mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -10mA
VCE = -10V, IE = -5mA, f = 100MHz
IC = -50μA
IC = -1mA
IE = -50μA
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.25mA
Gain-Bandwidth Product*
* Transistor - For Reference Only
250
fT
⎯
200
⎯
MHz
VCE = -10V, IE = 5mA, f = 100MHz
200
N (mW)
150
DISSI
100
d
50
0
-50
DS30405 Rev. 6 - 2
050100
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Derating Curve
150
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DDTA (LO-R1) E
© Diodes Incorporated
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