Diodes DDTA-E User Manual
C
DDTA (R1-ONLY SERIES) EDDTA (R1-ONLY SERIES) E
PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available (DDTC)
• Built-In Biasing Resistor, R1 only
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
NEW ODUC ODUCPPR T T R
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking & Date Code Information: See Diagrams
& Page 4
• Ordering Information: See Page 4
• Weight: 0.002 grams (approximate)
P/N R1 (NOM) MARKING
DDTA113TE
DDTA123TE
DDTA143TE
DDTA114TE
DDTA124TE
DDTA144TE
DDTA115TE
DDTA125TE
1KΩ
2.2KΩ
4.7KΩ
10KΩ
22KΩ
47KΩ
100KΩ
200KΩ
P01
P03
P07
P12
P16
P19
P23
P25
A
C
TOP VIEW
B
G
H
K
J
D
R
B
SCHEMATIC DIAGRAM
C
B
E
N
L
1
M
E
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α
All Dimensions in mm
SOT-523
⎯ ⎯
0° 8°
0.50
⎯
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30319 Rev. 6 - 2
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
= 25°C unless otherwise specified
A
IC (Max)
Tj, T
1 of 4
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V
CBO
V
CEO
V
EBO
Pd
R
JA
θ
STG
-50 V
-50 V
-5 V
-100 mA
150 mW
833
-55 to +150
DDTA (R1-ONLY SERIES) E
°C/W
°C
© Diodes Incorporated
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
NEW PRODUCT
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30319 Rev. 6 - 2
= 25°C unless otherwise specified
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
⎯ ⎯
EBO
V
CE(sat)
hFE
fT
-50
-50
-5
⎯ ⎯
⎯ ⎯
100 250 600
⎯
2 of 4
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⎯ ⎯
⎯ ⎯
⎯ ⎯
250
-0.5
μA
-0.5
μA
-0.3 V
⎯
MHz
⎯
V
IC = -50μA
V
IC = -1mA
V
IE = -50μA
VCB = -50V
VEB = -4V
IC/IB = -10mA/-1mA DDTA113TE
IC/IB = -5mA/-0.5mA DDTA123TE
IC/IB = -2.5mA/-.25mA DDTA143TE
IC/IB = -1mA/-.1mA DDTA114TE
IC/IB = -5mA/-0.5mA DDTA124TE
IC/IB = -2.5mA/-.25mA DDTA144TE
IC/IB = -1mA/-0.1mA DDTA115TE
IC/IB = -.5mA/-.05mA DDTA125TE
IC = -1mA, VCE = -5V
VCE = -10V, IE = 5mA,
f = 100MHz
DDTA (R1-ONLY SERIES) E
© Diodes Incorporated
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