Diodes DDTA114YLP User Manual
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50V PRE-BIASED SMALL SIGNAL SURFACE MOUNT PNP TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DFN1006-3
Bottom View
B
C
E
Top View
Pin-Out
DDTA114YLP
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0009 grams (approximate)
1
OUT
C
10k
Ω
IN
1
R
1
47k
R
2
Device S
3
B
Ω
(or -suppl y)
E
+ Supply
2
or GND
mbol
B
IN
2
E
GND (or +supply)
Equivalent Inverter
Circuit
OUT
C
3
(or -supply)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DDTA114YLP-7 P3 7 8 3,000
DDTA114YLP-7B P3 7 8 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DDTC113TLP-7 DDTC113TLP-7B
P3P3
Top View
Dot Denotes
Collector Side
Top View
Bar Denotes Base
and Emitter Side
P3 = Product Type Marking Code
DDTA114YLP
Document number: DS30807 Rev. 6 - 2
1 of 5
www.diodes.com
February 2011
© Diodes Incorporated
)
r
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Ω
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Output (Collector) Current
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Power Derating above 25°C
Thermal Resistance, Junction to Ambient Air (Note 4)
(Equivalent to one heated junction of PNP)
Operating and Storage Temperature Range
I
C(MAX
T
J
R
V
P
, T
DDTA114YLP
CC
V
IN
I
O
P
D
de
JA
θ
STG
-50 V
+6 to -40 V
-70 mA
-100 mA
250 mW
2 mW/°C
500 °C/W
-55 to +150 °C
Electrical Characteristics: Discrete PNP Transistor (Q1) @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I
O(off
Emitter-Base Cut Off Current
Input Off Voltage
I
BV
BV
I
I
V
CBO
CEO
CBO
CEO
EBO
I(off
-50
-50
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
V
V
-0.1
-0.5
μA
μA
-0.2 mA
-0.3 V
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
VCB = -50V, IE = 0
VCB = -50V, IB = 0
VEB = 4V, IC = 0
VCC = -5V, IO = -100uA
On Characteristics (Note 5)
Input-On Voltage
Input Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output On Voltage
V
V
CE(sat
V
I(on
I
I
h
FE
O(on
-1.4
⎯ ⎯
80
⎯ ⎯
⎯
⎯ ⎯
-0.88 mA
⎯ ⎯ ⎯
-0.25 V
-0.1 -0.3 V
Input Resistance R1 7 10 13
Resistance Ratio (R2/R1) 3.7 4.7 5.7
V
VO = -0.3V, IO = IC = 1mA
VI = -5V
VCE = -5V, IC = -5mA
IC = -50mA, IB = -2.5mA
II = -0.25mA, IO = -5mA
K
⎯ ⎯
⎯
Small Signal Characteristics
Current Gain-Bandwidth Product
Notes: 4. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”.
5. Short duration pulse test used to minimize self-heating effect. Pulse width tp<300μS, Duty Cycle, d≤2%.
fT ⎯
250
⎯
MHz
VCE = -10V, IE = -5mA, f = 100 MHz
DDTA114YLP
Document number: DS30807 Rev. 6 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
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