Diodes DDC-LO-R1-U User Manual
NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (DDA)
• Built-In Biasing Resistors
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin Solderable per MIL-STD-
202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe)
• Terminal Connections: See Diagram
• Marking Information: See Diagrams & Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DDC122LU
DDC142JU
DDC122TU
DDC142TU
0.22K
0.47K
0.22K
0.47K
10K
10K
OPEN
OPEN
N81
N82
N83
N84
K
J
A
NXX YM
H
D
6
R
2
1
DDC (LO-R1) U
SOT-363
Dim Min Max
NXX YM
C
B
M
L
F
54
R
R
1
2
R
1
32
R
, R2 R
1
SCHEMATIC DIAGRAM
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimensions in mm
6
4
5
R
1
R
1
321
Only
1
⎯
0°
0.10
8°
Maximum Ratings @T
Characteristic Symbol Value Unit
Supply Voltage (6) to (1) and (3) to (4)
Input Voltage (2) to (1) and (5) to (4) DDC122LU
DDC142JU
Input Voltage (1) to (2) and (4) to (5)
DDC122TU
DDC142TU
Output Current All
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 2)
Notes: 1. 150mW per element must not be exceeded.
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30424 Rev. 6 - 2
= 25°C unless otherwise specified
A
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VCC
VIN
V
EBO (MAX)
IC
Pd
R
θ
-5 to +6
-5 to +6
100 mA
200 mW
JA
625
50 V
V
5 V
°C/W
DDC (LO-R1) U
© Diodes Incorporated
P, P
OWER
PATIO
N
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
DDC122LU
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
DDC142JU
DDC122LU
DDC142JU
DDC122LU
DDC142JU
DDC122LU
DDC142JU
= 25°C unless otherwise specified R1, R2 Types
A
V
l(off)
V
⎯ ⎯
l(on)
V
O(on)
0.3
0.3
⎯ ⎯
Il ⎯ ⎯
I
O(off)
Gl
fT
⎯ ⎯
56
56
⎯
⎯ ⎯
0.3V V
⎯ ⎯ ⎯ VO = 5V, IO = 10mA
200
2.0
2.0
28
13
0.5
⎯
V
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
V
VO = 0.3V, IO = 20mA
IO/Il = 5mA/0.25mA
mA
VI = 5V
μA
VCC = 50V, VI = 0V
MHz
VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDC122TU
DDC142TU
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
250
200
(mW)
150
DISSI
DDC122TU
DDC142TU
DDC122TU
DDC142TU
= 25°C unless otherwise specified R1- Only
A
BV
CBO
BV
CEO
BV
EBO
I
⎯ ⎯
CBO
I
EBO
V
CE(sat)
hFE
fT
50
40
5
⎯
⎯
⎯ ⎯
100
100
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
250
200
V
IC = 50μA
V
IC = 1mA
IE = 50μA
V
IE = 50μA
0.5
μA
VCB = 50V
0.5
μA
0.5
0.3 V
600
600
⎯
VEB = 4V
IC = 5mA, IB = 0.25mA
⎯ IC = 1mA, VCE = 5V
MHz
VCE = 10V, IE = -5mA, f = 100MHz
100
d
50
0
-50
050100
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Derating Curve
150
(150mW per element must not be exceeded).
DS30424 Rev. 6 - 2
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DDC (LO-R1) U
© Diodes Incorporated
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