Diodes DDC-LO-R1-H User Manual
NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (DDA)
• Built-In Biasing Resistors
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-563, Molded Plastic
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DDC122LH
DDC142JH
DDC122TH
DDC142TH
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
N81
N82
N83
N84
K
A
NXXYM
D
G
H
65
R
R
2
1
R1, R2 R
DDC (LO-R1) H
Dim Min Max Typ
B
C
M
L
SEE NOTE 1
4
R
R
1
2
1
3
2
SCHEMATIC DIAGRAM, TOP VIEW
SOT-563
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.15 0.25 0.20
M 0.10 0.18 0.11
All Dimensions in mm
6
54
R
1
R
1
2
Only
3
1
1
Maximum Ratings @T
Characteristic Symbol Value Unit
Supply Voltage (6) to (1) and (3) to (4)
Input Voltage (2) to (1) and (5) to (4) DDC122LH
DDC142JH
Input Voltage (1) to (2) and (4) to (5)
DDC122TH
DDC142TH
Output Current All
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 2)
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
DS30428 Rev. 4 - 2
= 25°C unless otherwise specified
A
1 of 3
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VCC
VIN
V
EBO (MAX)
IC
Pd
R
θ
-5 to +6
-5 to +6
JA
50 V
V
5 V
100 mA
150 mW
833
°C/W
DDC (LO-R1) H
© Diodes Incorporated
P
P
OWER
P
TIO
Electrical Characteristics @T
= 25°C unless otherwise specified R1, R2 Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
DDC122LH
Input Voltage
DDC142JH
DDC122LH
DDC142JH
Output Voltage
Input Current
DDC122LH
DDC142JH
Output Current
DC Current Gain
DDC122LH
DDC142JH
Gain-Bandwidth Product*
* Transistor - For Reference Only
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDC122TH
DDC142TH
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
250
DDC122TH
DDC142TH
DDC122TH
DDC142TH
V
l(off)
V
⎯ ⎯
l(on)
V
O(on)
Il
I
O(off)
Gl
fT ⎯
= 25°C unless otherwise specified R1-Only
A
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
hFE
fT ⎯
0.3
0.3
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
56
56
⎯ ⎯ ⎯ VO = 5V, IO = 10mA
200
50
40
5
⎯ ⎯
⎯
⎯
⎯ ⎯
100
100
0.3V V
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
250
200
2.0
2.0
28
13
0.5
⎯
0.5
0.5
0.5
0.3 V
600
600
⎯
V
V
mA
μA
MHz
MHz
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
IO/Il = 5mA/0.25mA
VI = 5V
VCC = 50V, VI = 0V
VCE = 10V, IE = 5mA, f = 100MHz
V
IC = 50μA
V
IC = 1mA
IE = 50μA
V
IE = 50μA
μA
VCB = 50V
μA
VEB = 4V
IC = 5mA, IB = 0.25mA
⎯ IC = 1mA, VCE = 5V
VCE = 10V, IE = -5mA, f = 100MHz
200
N (mW)
A
150
DISSI
100
,
d
50
0
-50
050100
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Derati ng Curve
DS30428 Rev. 4 - 2
°
150
2 of 3
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DDC (LO-R1) H
© Diodes Incorporated
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