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General Description
• DDC144TU is best suited for logic switching applications
using control circuits like micro-controllers, comparators,
etc. It features two discrete NPN transistors which can
support maximum continuous current of 100 mA. NPN
transistors can be used as a control and also these can
be biased using higher supply voltages due to the built in
current limiting base resistor of 47 K Ohm. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
Features
• Built in Base Resistors
• Epitaxial Planar Die Construction
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Fig. 2
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.015 grams (approximate)
Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) Figure
DDTC144T_DIE Q1 NPN
DDTC144T_DIE Q2 NPN
DDC144TU
DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR
Fig. 1: SOT-363
CQ1
DDC144T_DIE
Q1
EQ1
Fig. 2: Schematic and Pin Configuration
BQ2
R2
R1 47k
47KΩ
⎯
47k
DDC144T_DIE
BQ1
EQ2
Q2
CQ2
⎯
47KΩ
2
2
Maximum Ratings: Total Device @T
Characteristic Symbol Value Unit
Power Dissipation
Power Deration above 25°C
Output Current
Thermal Characteristics
Characteristic Symbol Value Unit
Junction Operation and Storage Temperature Range
Thermal Resistance, junction to ambient (packaged device)
(Ref: equivalent to only one heated junction) @ TA = 25°C
Notes: 1. No purposefully added lead.
DS30767 Rev. 7 - 2 1 of 6
2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Page 5 or see Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http:/www.diodes.com/datasheets/ap02001.pdf.
= 25°C unless otherwise specified
A
P
d
P
der
I
out
TJ, T
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STG
R
θJA
200 mW
1.6
100 mA
-55 to +150
625
mW / °C
°C
°C/W
DDC144TU
© Diodes Incorporated
Page 2
Maximum Ratings:
NEW PRODUCT
Sub-Component Device: Discrete NPN Transistor (Q1, Q2) @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (dc)
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I
I
O(OFF)
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
V
V
Output Voltage (Transistor is off)
Input Voltage (load is off)
Output Current (leakage same as I
) I
CEO
On Characteristics*
Collector-Emitter Saturation Voltage
V
DC Current Gain
Output Voltage (equivalent to V
CE(SAT)
or V
) VOL
O(on)
Input Voltage
Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
V
V
Input Resistor +/- 30% (Base) R1
Small Signal Characteristics
Transition Frequency (gain-bandwidth product)
Collector Capacitance, (Ccbo-Output Capacitance)
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
I
CBO
CEO
I
EBO
(BR)CBO
(BR)CEO
(BR)EBO
V
OH
V
I(OFF)
O(OFF)
CE(SAT)
h
FE
V
I(ON)
I
i
BE(ON)
BE(SAT)
f
T
C
C
V
CBO
V
CEO
V
EBO
I
C(max)
⎯ ⎯
⎯ ⎯
⎯ ⎯
50
50
6
4.6 4.45
⎯
⎯ ⎯
⎯
⎯
⎯
⎯
150 400
150 400
150 350
150 300
50 110
⎯
1.5 0.95
⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯ ⎯
100 nA
500 nA
500 nA
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
0.6 0.4
850 nA
0.03 0.1 V
0.075 0.1 V
0.05 0.1 V
0.2 0.3 V
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.2 0.25 Vdc
⎯
19.2 28 mA
1.2 V
1.6 V
47
250
⎯
⎯
5 pF
= 25°C unless otherwise specified
A
50 V
50 V
6 V
50 mA
VCB = 50V, IE = 0
V
= 50V, IB = 0
CE
V
= 5V, IC = 0
V
V
V
V
⎯
VCC = 5V, VB = 0.05V, RL = 1KΩ
EB
IC = 50uA, IE = 0
IC = 1 mA, IB = 0
IE = 50uA, IC = 0
VCE = 5V, IC = 100uA
VCC = 50V, VI = 0V
I
= 2.5 mA, IB = 0.25 mA
C
I
= 10mA, IB = 0.5mA
C
I
= 10mA, IB = 1mA
C
= 50mA, IB= 5mA
I
C
V
= 5V, IC = 1 mA
CE
V
= 5V, IC = 10 mA
CE
V
= 5V, IC = 25 mA
CE
V
= 5V, IC = 50 mA
CE
V
= 5V, IC = 100 mA
CE
V
= 5V, VB = 2.5V, RL=10KΩ
Vdc
CC
VO= 0.3V, IC= 2mA
VI = 5V
VCE = 5V, IC = 2mA
IC = 200uA, IB = 20uA
KΩ
MHz
VCE = 10V, IE = 5mA, f =100MHz
⎯
VCB = 10V, IE = 0, f = 1MHz
DS30767 Rev. 7 - 2 2 of 6
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DDC144TU
© Diodes Incorporated
Page 3
P
P
OWER
PATIO
P, P
OWER D
P
O
N
C CUR
REN
T GAIN
D
C CUR
RENT GAIN
C
O
C
T
O
R
T
TER
250
35
NEW PRODUCT
200
N (mW)
150
DISSI
100
,
d
50
0
25 12510075 150 175
050
T , AMBIENT TEMPERATURE ( C)
Fig. 3 Maximum Power Derating Curve
1,400
1,200
1,000
800
T= 85C
°
A
600
A
T= 25C
30
(mW)
25
ATI
20
ISSI
15
10
d
5
0
25 125100
50
0
°
T , AMBIENT TEMPERATURE ( C)
A
Fig. 4 Power Derating for Nominal Operation
75
150 175
°
1,400
V=5V
ce
V =10V
ce
1,200
1,000
800
T = 125 C
°
A
°
A
600
T= 85C
A
T= 25C
°
A
°
T = 125 C
A
°
FE
400
h, D
T = 150 C
°
A
200
0.1
0.09
0.08
0.07
0.06
0.05
0
0.1
I = 2.5mA
B
T= -55C
°
A
1
I , COLLECTOR CURRENT (mA)
C
10 100 1,000
Fig. 5 DC Current Gain
I = 4.5mA
B
I = 4mA
B
I = 3.5mA
B
I = 3mA
B
I = 2mA
B
I = 1.5mA
B
I = 5mA
B
0.04
0.03
C
I , COLLECTOR CURRENT (A)
0.02
0.01
I = 1mA
B
I = 0.5mA
B
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 7 I vs. V
CCE
400
FE
h,
200
T = 150 C
A
°
T= -55C
A
0
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 6 DC Current Gain
100
10
EMI
1
LLE
SATURA T ION VOLTAGE (V)
CE(SAT)
V,
0.01
0.1
T = 150°C
A
T =85°C
A
0.1
T = 125°C
A
T = 25°C
A
1
I , COLLECTOR CURRENT (mA)
C
Fig. 8 V vs I
°
I/I =10
cb
T =-55°C
A
10
CE(SAT) C
1,000
100 1,000
DS30767 Rev. 7 - 2 3 of 6
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DDC144TU
© Diodes Incorporated
Page 4
C
T
T
R VO
TAG
NEW PRODUCT
50
45
40
E (V)
35
L
30
E
25
20
15
BE
10
V , BASE-EMI
T = -55°C
A
T = 25°C
T = 125°C
A
T = 150C
°
A
A
5
T = 85°C
0
0.1
1
I , COLLECTOR CURRENT (mA)
C
Fig. 9 V v s I
10 100
BE
A
30
27
24
18
15
12
21
T = -55C
°
A
T =25C
°
A
T = 85C
°
A
T = 125C
°
A
T = 150 C
°
A
9
6
3
0
1
I , COLLECTOR CURRENT (mA)
C
Fig. 10 V vs I
BE(SAT) C
T =150C
°
A
T = 25C
°
A
T = 125 C
T = -55C
°
A
T = 85C
A
I , COLLECTOR CURRENT (mA)
C
Fig. 11 Input Voltage vs Output C ur r ent
°
A
°
DS30767 Rev. 7 - 2 4 of 6
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DDC144TU
© Diodes Incorporated
Page 5
Ordering Information (Note 4)
NEW PRODUCT
Device
DDC144TU-7
Notes: 4. For packaging details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Code Packaging Shipping
N21 SOT-363 3000/Tape & Reel
Marking Information
Date Code Key
Year
Code
Month Jan Feb Mar Apr May Jun Jul
Code 1 2 3 4 5 6 7
2006 2007 2008 2009 2010 2011 2012
T U V W X Y Z
N21 YM
Fig. 12
N21 YM
N21 = Product Type Marking Code
YM = Date Code Marking
Y = Year e.g., U = 2007
M = Month e.g., 9 = September
Aug Sep Oct Nov Dec
8 9 O N D
Mechanical Details
K
J
A
H
D
Fig. 13
SOT-363
Dim Min Max
C
B
M
L
F
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J – 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
0° 8°
α
All Dimensions in mm
Suggested Pad Layout: (Based on IPC-SM-782)
DS30767 Rev. 7 - 2 5 of 6
G
Z
Y
X
EE
Fig. 14
Figure 14
Dimensions
C
All Dimensions in mm
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Z 2.5
G 1.3
X 0.42
Y 0.6
C 1.9
E 0.65
SOT-363
DDC144TU
© Diodes Incorporated
Page 6
NEW PRODUCT
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30767 Rev. 7 - 2 6 of 6
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DDC144TU
© Diodes Incorporated
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