Diodes DDC144TU User Manual
NEW PRODUCT
Please click here to visit our online spice models database.
General Description
• DDC144TU is best suited for logic switching applications
using control circuits like micro-controllers, comparators,
etc. It features two discrete NPN transistors which can
support maximum continuous current of 100 mA. NPN
transistors can be used as a control and also these can
be biased using higher supply voltages due to the built in
current limiting base resistor of 47 K Ohm. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
Features
• Built in Base Resistors
• Epitaxial Planar Die Construction
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Fig. 2
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.015 grams (approximate)
Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) Figure
DDTC144T_DIE Q1 NPN
DDTC144T_DIE Q2 NPN
DDC144TU
DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR
Fig. 1: SOT-363
CQ1
DDC144T_DIE
Q1
EQ1
Fig. 2: Schematic and Pin Configuration
BQ2
R2
R1 47k
47KΩ
⎯
47k
DDC144T_DIE
BQ1
EQ2
Q2
CQ2
⎯
47KΩ
2
2
Maximum Ratings: Total Device @T
Characteristic Symbol Value Unit
Power Dissipation
Power Deration above 25°C
Output Current
Thermal Characteristics
Characteristic Symbol Value Unit
Junction Operation and Storage Temperature Range
Thermal Resistance, junction to ambient (packaged device)
(Ref: equivalent to only one heated junction) @ TA = 25°C
Notes: 1. No purposefully added lead.
DS30767 Rev. 7 - 2 1 of 6
2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Page 5 or see Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http:/www.diodes.com/datasheets/ap02001.pdf.
= 25°C unless otherwise specified
A
P
d
P
der
I
out
TJ, T
www.diodes.com
STG
R
θJA
200 mW
1.6
100 mA
-55 to +150
625
mW / °C
°C
°C/W
DDC144TU
© Diodes Incorporated
Maximum Ratings:
NEW PRODUCT
Sub-Component Device: Discrete NPN Transistor (Q1, Q2) @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (dc)
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I
I
O(OFF)
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
V
V
Output Voltage (Transistor is off)
Input Voltage (load is off)
Output Current (leakage same as I
) I
CEO
On Characteristics*
Collector-Emitter Saturation Voltage
V
DC Current Gain
Output Voltage (equivalent to V
CE(SAT)
or V
) VOL
O(on)
Input Voltage
Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
V
V
Input Resistor +/- 30% (Base) R1
Small Signal Characteristics
Transition Frequency (gain-bandwidth product)
Collector Capacitance, (Ccbo-Output Capacitance)
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
I
CBO
CEO
I
EBO
(BR)CBO
(BR)CEO
(BR)EBO
V
OH
V
I(OFF)
O(OFF)
CE(SAT)
h
FE
V
I(ON)
I
i
BE(ON)
BE(SAT)
f
T
C
C
V
CBO
V
CEO
V
EBO
I
C(max)
⎯ ⎯
⎯ ⎯
⎯ ⎯
50
50
6
4.6 4.45
⎯
⎯ ⎯
⎯
⎯
⎯
⎯
150 400
150 400
150 350
150 300
50 110
⎯
1.5 0.95
⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯ ⎯
100 nA
500 nA
500 nA
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
0.6 0.4
850 nA
0.03 0.1 V
0.075 0.1 V
0.05 0.1 V
0.2 0.3 V
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.2 0.25 Vdc
⎯
19.2 28 mA
1.2 V
1.6 V
47
250
⎯
⎯
5 pF
= 25°C unless otherwise specified
A
50 V
50 V
6 V
50 mA
VCB = 50V, IE = 0
V
= 50V, IB = 0
CE
V
= 5V, IC = 0
V
V
V
V
⎯
VCC = 5V, VB = 0.05V, RL = 1KΩ
EB
IC = 50uA, IE = 0
IC = 1 mA, IB = 0
IE = 50uA, IC = 0
VCE = 5V, IC = 100uA
VCC = 50V, VI = 0V
I
= 2.5 mA, IB = 0.25 mA
C
I
= 10mA, IB = 0.5mA
C
I
= 10mA, IB = 1mA
C
= 50mA, IB= 5mA
I
C
V
= 5V, IC = 1 mA
CE
V
= 5V, IC = 10 mA
CE
V
= 5V, IC = 25 mA
CE
V
= 5V, IC = 50 mA
CE
V
= 5V, IC = 100 mA
CE
V
= 5V, VB = 2.5V, RL=10KΩ
Vdc
CC
VO= 0.3V, IC= 2mA
VI = 5V
VCE = 5V, IC = 2mA
IC = 200uA, IB = 20uA
KΩ
MHz
VCE = 10V, IE = 5mA, f =100MHz
⎯
VCB = 10V, IE = 0, f = 1MHz
DS30767 Rev. 7 - 2 2 of 6
www.diodes.com
DDC144TU
© Diodes Incorporated
Loading...