Diodes DDA-LO-R1-H User Manual
PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available
(DDC)
• Built-In Biasing Resistors
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DDA122LH
DDA142JH
DDA122TH
DDA142TH
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
P81
P82
P83
P84
K
A
PXXYM
D
G
H
65
R
R
2
R1, R2 R
DDA (LO-R1) H
Dim Min Max Typ
B
C
M
L
SEE NOTE 1
4
R
1
R
2
1
321
SCHEMATIC DIAGRAM, TOP VIEW
SOT-563
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.15 0.25 0.20
M 0.10 0.18 0.11
All Dimensions in mm
5
R
1
1
Only
4
32
6
R
1
1
Maximum Ratings @T
Characteristic Symbol Value Unit
Supply Voltage (6) to (1) and (3) to (4)
Input Voltage (2) to (1) and (5) to (4) DDA122LH
DDA142JH
Input Voltage (1) to (2) and (4) to (5) DDA122TH
DDA142TH
Output Current All
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30427 Rev. 4 - 2
= 25°C unless otherwise specified
A
1 of 3
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VCC
VIN
V
EBO (MAX)
IC
Pd
R
θ
Tj, T
JA
STG
+5 to -6
+5 to -6
-55 to +150
-50 V
V
-5 V
-100 mA
150 mW
833
°C/W
°C
DDA (LO-R1) H
© Diodes Incorporated
P
P
O
R
PATIO
Electrical Characteristics @T
= 25°C unless otherwise specified R1, R2 Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
DDA122LH
Input Voltage
DDA142JH
DDA122LH
DDA142JH
Output Voltage
Input Current
DDA122LH
DDA142JH
Output Current
DC Current Gain
DDA122LH
DDA142JH
Gain-Bandwidth Product*
* Transistor - For Reference Only
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DDA122TH
DDA142TH
Collector Cutoff Current
Emitter Cutoff Current
DDA122TH
DDA142TH
V
V
V
l(off)
l(on)
O(on)
-0.3
-0.3
⎯ ⎯
⎯ ⎯
⎯ ⎯
-2.0
-2.0
-0.3V V
Il ⎯ ⎯
I
O(off)
Gl
⎯ ⎯
56
56
fT ⎯
= 25°C unless otherwise specified R1-Only
A
-50
-40
-5
⎯ ⎯
⎯
⎯
BV
BV
BV
I
I
CBO
CEO
EBO
CBO
EBO
-0.5
⎯ ⎯ ⎯ VO = -5V, IO = -10mA
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
-28
-13
⎯
-0.5
-0.5
-0.5
V
V
mA
μA
MHz
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
VO = -0.3V, IO = -20mA
IO/Il = -5mA/-0.25mA
VI = -5V
VCC = -50V, VI = 0V
VCE = -10V, IE = -5mA, f = 100MHz
V
IC = -50μA
V
IC = -1mA
IE = -50μA
V
IE = -50μA
μA
VCB = -50V
μA
VEB = -4V
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
250
DDA122TH
DDA142TH
V
⎯ ⎯
CE(sat)
hFE
fT ⎯
100
100
250
250
200
-0.3 V
600
600
⎯
IC = -5mA, IB = -0.25mA
⎯ IC = -1mA, VCE = -5V
MHz
VCE = -10V, IE = 5mA, f = 100MHz
200
N (mW)
150
DISSI
100
WE
,
d
50
0
-50
DS30427 Rev. 4 - 2
050100
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Derating Curve
150
2 of 3
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DDA (LO-R1) H
© Diodes Incorporated
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