Page 1
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Features
• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• Available in Lead Free/RoHS Compliant Version (Note 1)
• “Green” Device (Note 2)
Part Number R1 R2 Marking
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
22KΩ 22KΩ
47KΩ 47KΩ
10KΩ 47KΩ
2.2KΩ 47KΩ
10KΩ 10KΩ
100KΩ 100KΩ
4.7KΩ
10KΩ
- C07
- C12
C1 B2 E2
E1 B1 C2
R1, R2 Device Schematic R1 only Device Schematic
C17
C20
C14
C06
C13
C15
R
R
1
R
R
2
1
DC
xxxx)
DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR
Mechanical Data
• Case: SC-74R (Note 3)
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Table and Page 11
• Ordering Information: See Page 11
• Weight: 0.015 grams (approximate)
C1 B2 E2
R
2
E1 B1 C2
1
R
1
Maximum Ratings NPN Section @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Output Current All
Thermal Characteristics NPN Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device
datasheets for exact details regarding the location of the pin one indicator.
4. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be
exceeded.
= 25°C unless otherwise specified
A
VCC
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
1 of 12
www.diodes.com
VIN
I
C(MAX)
R
TJ, T
IO
PD
θ
JA
STG
50 V
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-10 to +40
-5V max
-5V max
30
30
70
100
50
20
100
100
100 mA
300 mW
417
-55 to +150
V
mA
°C/W
°C
October 2008
© Diodes Incorporated
Page 2
Maximum Ratings PNP Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage
DCX124EK
DCX144EK
DCX114YK
Input Voltage
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
Output Current
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
Output Current All
Thermal Characteristics PNP Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
VCC
VIN
I
C(MAX)
R
TJ, T
IO
PD
θ
JA
STG
DC
xxxx)
50 V
+10 to –40
+10 to –40
+6 to –40
+5 to –12
+10 to –40
V
+10 to –40
+5V max
+5V max
-30
-30
-70
-100
-50
mA
-20
-100
-100
-100 mA
300 mW
833
-55 to +150
°C/W
°C
Electrical Characteristics NPN Section @T
= 25°C unless otherwise specified
A
Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
BV
BV
BV
I
I
V
CE(SAT)
DC Current Transfer Ratio
Input Resistor (R1) Tolerance ΔR 1
Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
www.diodes.com
CBO
CEO
EBO
⎯ ⎯
CBO
⎯ ⎯
EBO
100 250 600
hFE
-30
fT ⎯
2 of 12
50
⎯ ⎯
50
⎯ ⎯
5
⎯ −−
⎯ ⎯
⎯
250
V
IC = 50μA
V
IC = 1mA
V
IE = 50μA
0.5
μ A
VCB = 50V
0.5
μ A
VEB = 4V
0.3 V
IC/IB = 2.5mA / 0.25mA – DCX143TK
IC/IB = 1mA / 0.1mA – DCX114TK
⎯ IC = 1mA, VCE = 5V
+30 %
MHz
⎯
VCE = 10V, IE = -5mA, f = 100MHz
⎯
October 2008
© Diodes Incorporated
Page 3
Electrical Characteristics NPN Section (continued) @T
Characteristic Symbol Min Typ Max Unit Test Condition
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance ΔR 1
Resistance Ratio Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
V
V
V
I
O(OFF)
R2/R1
Electrical Characteristics PNP Section @T
Characteristic (DCX143TK & DCX114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R1) Tolerance ΔR 1
Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
BV
BV
BV
I
CBO
I
EBO
V
CE(SAT)
hFE
www.diodes.com
0.5
0.5
0.3
l(OFF)
0.5
0.5
0.5
⎯
l(ON)
⎯
O(ON)
Il ⎯ ⎯
⎯ ⎯
80
68
68
Gl
80
30
82
-30
-20
⎯
fT
= 25°C unless otherwise specified
A
-50
CBO
-50
CEO
-5
EBO
⎯ ⎯
⎯ ⎯
⎯ ⎯
100 250 600
-30
fT ⎯
3 of 12
= 25°C unless otherwise specified
A
1.1
1.1
⎯
⎯
1.1
1.1
1.65
1.9
⎯
⎯
1.9
1.9
0.1 0.3 V
⎯ ⎯ ⎯
⎯
⎯
250
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
V
⎯
3.0
3.0
1.4
1.1
3.0
3.0
0.36
0.18
0.88
3.6
0.88
0.15
0.5
+30 %
+20
⎯
-0.5
-0.5
-0.3 V
+30 %
⎯
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 2mA
VO = 0.3V, IO = 1mA
V
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 1mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
IO/Il = 5mA / 0.25mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
mA
VI = 5V
μ A
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
% ⎯
MHz
VCE = 10V, IE = -5mA, f = 100MHz
V
IC = -50μA
V
IC = -1mA
V
IE = -50μA
μ A
VCB = -50V
μ A
VEB = -4V
IC/IB = -2.5mA / -0.25mA - DCX143TK
IC/IB = -1mA / -0.1mA - DCX114TK
⎯ IC = -1mA, VCE = -5V
MHz
VCE = -10V, IE = 5mA, f = 100MHz
⎯
⎯
DC
© Diodes Incorporated
xxxx)
October 2008
Page 4
Electrical Characteristics PNP Section (Continued) @T
Characteristic
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance ΔR 1
Resistance Ratio Tolerance
Gain-Bandwidth Product*
*Transistor - For Reference Only
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Symbol Min Typ Max Unit Test Condition
V
l(OFF)
V
⎯
l(ON)
V
⎯
O(ON)
Il
I
⎯ ⎯
O(OFF)
Gl
R2/R1
fT ⎯
-1.1
-0.5
-1.1
-0.5
⎯
-0.3
-0.5
⎯
-0.5
− 1.1
-0.5
− 1.1
-1.9
-1.9
⎯
⎯
-1.9
-1.9
-0.1 -0.3 V
⎯ ⎯
80
68
68
⎯ ⎯ ⎯
80
30
82
-30
⎯
-20
⎯
250
= 25°C unless otherwise specified
A
V
⎯
-3.0
-3.0
-1.4
-1.1
-3.0
-3.0
-0.36
-0.18
-0.88
-3.6
-0.88
-0.15
-0.5
+30 %
+20
⎯
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -5mA
VO = -0.3V, IO = -2mA
VO = -0.3V, IO = -1mA
V
VO = -0.3V, IO = -5mA
VO = -0.3V, IO = -10mA
VO = -0.3V, IO = -1mA
IO/Il = -10mA /-0.5mA
IO/Il = -10mA /-0.5mA
IO/Il = -5mA /-0.25mA
IO/Il = -5mA /-0.25mA
IO/Il = -10mA/-0.5mA
IO/Il = -5mA/-0.25mA
mA
VI = -5V
μ A
VCC = 50V, VI = 0V
VO = -5V, IO = -5mA
VO = -5V, IO = -5mA
VO = -5V, IO = -10mA
VO = -5V, IO = -10mA
VO = -5V, IO = -5mA
VO = -5V, IO = -5mA
% ⎯
MHz
VCE = -10V, IE = -5mA, f = 100MHz
⎯
DC
xxxx)
Typical Curves – Total Device
)
W
m
(
N
O
I
T
A
P
I
S
S
I
D
R
E
W
O
P
,
D
P
T AMBIENT TEMPERATURE (°C)
,
Fig. 1 Pow er Dissipatio n vs. Ambient Temper at ur e
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
A
4 of 12
www.diodes.com
October 2008
© Diodes Incorporated
Page 5
Typical Curves – DCX124EK PNP Section
)
A
(
T
N
E
R
R
U
C
R
O
T
I = 0.5mA
b
C
E
L
L
O
C
,
C
I
R
E
)
T
V
(
T
I
E
M
G
E
-
A
T
R
L
O
O
T
V
C
E
N
L
O
L
I
T
O
A
C
R
,
)
U
T
A
T
S
A
(
E
S
C
V
I = 0.6mA
b
I/I = 10
CB
I = 0.7mA
b
T = 85C
°
A
I = 0.8mA
b
I = 0.2mA
b
I = 0.9mA
b
I = 0.3mA
b
T = 125C
°
A
T = -55C
°
A
I = 0.4mA
b
I = 0.1mA
b
T = 150C
A
T = 25C
°
A
°
DC
350
V
= -5V
CE
T = 150 C
A
300
250
200
150
100
50
0
0.1 1 10 100 1,000
V = -5V
CE
T = 85C
A
T = 125C
°
A
°
T = -55C
°
A
T = 25C
°
A
°
T = 125 C
A
T = 85C
A
T = 25C
A
T = 150C
A
xxxx)
°
°
°
°
Fig. 5 Typical Base-Emitter Turn-On Voltage
I/I = 10
CB
T = 85C
T = 125C
°
A
A
T = -55C
°
A
T = 25C
°
A
°
T = 150C
°
A
V = -0.3V
CE
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
5 of 12
www.diodes.com
vs. Collector Current
T = 25C
A
T = -55C
°
A
T = 150C
A
Fig. 7 V vs. I
°
T = 85C
A
°
°
T = 125C
I(ON) C
°
A
© Diodes Incorporated
October 2008
Page 6
Typical Curves – DCX124EK NPN Section
,
FE
C
I , COLLECTOR CURRENT (A)
V , COLLECTOR-EMIT TER VO LTAGE (V)
CE
Fig. 8 Typical Collector Current
vs. Collector-Emitter Voltage
I/I = 10
CB
h DC CURRENT GAIN
DC
V = 5V
CE
T = 25C
A
Fig. 9 Typical DC Current Gain vs. Collector Current
T = 150C
°
A
T = 125C
°
A
T = 85C
°
A
°
T = -55C
°
A
I , COLLECTOR CURRENT (mA)
C
V = 5V
CE
xxxx)
T = 150 C
°
T = 125 C
T = 85C
A
T = -55C
A
SATURATION VOLTAGE (V)
CE(SAT)
V , COLLECTOR-EMITTER
I , COLLECTOR CURRENT (mA)
C
Fig. 10 Collector-Emitter Saturation Voltage
A
°
T = 25C
°
A
vs. Collecto r Cu r re nt
I/I = 10
CB
T = -55C
°
A
T = 25C
°
A
T = 85C
°
A
T = 125C
BE(SAT)
V , BASE-EMITTER
SATURATION VOLTAGE (V)
°
A
T = 150C
A
A
°
T = -55C
°
A
°
T = 125C
°
A
BE(ON)
V , BASE-EMITTER TURN-ON VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
T = 25C
A
T = 85C
°
A
°
T = 150C
°
A
Fig. 11 Base-Emitter Turn-On Voltage
I(ON)
°
V , INPUT VOLTAGE (V)
vs. Collector Current
VCE = 0.3V
T = 125C
°
A
T = 85C
A
°
T = -55C
T = 25C
°
A
°
A
T = 150C
°
A
I , COLLECTOR CURRENT (mA)
C
Fig. 12 Typical Base-Emitter Saturation Voltage
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
vs. Collector Current
6 of 12
www.diodes.com
I , OUTPUT CURRENT (mA)
C
Fig. 13 V vs. I
I(ON) C
October 2008
© Diodes Incorporated
Page 7
Typical Curves – DCX123JK PNP Section
1,000
V = 10
CE
AIN
100
FE
h, D
10
11 0
I , COLLECTOR CURRENT (mA)
C
Fig. 14 Typical DC Current Gain vs. Collector Current
I = 0mA
E
1 0 0
E
EMI
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001
100
DC
1
I/I = 10
CB
0.1
0
10
I , COLLECTOR CURRENT (mA)
C
Fig. 15 Typical Collector Emitter Saturation Voltage
T = 75C
°
A
T = -25C
T = 25C
°
A
20
A
30
vs. Collector Current
°
40
xxxx)
50
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
R
Fig. 16 Typical Capacitance Characteristics
10
V = 0.2
O
T = -25°C
A
1
T = 75C
°
A
10
(mA)
1
0.1
C
obo
LLE
I,
0.01
C
0.001
5
01234 89
V , INPUT VOLTAGE (V)
Fig. 17 Collector Current vs. Input Voltage
in
6
7
10
T = 25°C
in
A
V , INPUT VOLTAGE (V)
0.1
01 02 03 04 0
I , COLLECTOR CURRENT (mA)
C
Fig. 18 In put Voltage vs. Collecto r Cu r r e nt
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
5 0
7 of 12
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October 2008
© Diodes Incorporated
Page 8
Typical Curves – DCX123JK NPN Section
1,000
V = 10
CE
AIN
100
FE
h, D
10
11 0
I , COLLECTOR CURRENT (mA)
C
Fig. 19 Typical DC Current Gain vs. Collector Current
I = 0mA
E
1 0 0
EMI
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001
100
1
I/I = 10
CB
0.1
0
10
I , COLLECTOR CURRENT (mA)
C
T = 75C
T = 25C
°
A
20
°
A
30
Fig. 20 Collector Emitter Saturation Voltage
vs. Collector Current
DC
T = -25C
°
A
40
xxxx)
50
V , REVERSE VOLTAGE (V)
R
Fig. 21 Typical Capacit ance Characteristics
10
V = 0.2
O
T = -25°C
A
1
10
(mA)
1
0.1
C
obo
LLE
0.01
C
I,
0.001
67
0
234
1
V , INPUT VOLTAGE (V)
in
5
Fig. 22 Collector Current vs. Input Voltage
89
10
in
V , INPUT VOLTAGE (V)
0.1
01 02 03 04 0
I , COLLECTOR CURRENT (mA)
C
Fig. 23 Input Voltage vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
5 0
8 of 12
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October 2008
© Diodes Incorporated
Page 9
Typical Curves – DCX114TK PNP Section
1,000
100
10
FE
h, D
1
11 0
I , COLLECTOR CURRENT (mA)
C
Fig. 24 Typical DC Current Gain vs. Collector Current
I = 0mA
E
1 0 0
1
I/I = 10
CB
T = 75C
0.1
EMI
T = 25C
A
°
A
T = -25C
°
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001
0
10
I , COLLECTOR CURRENT (mA)
C
20
30
Fig. 25 Typical Collector Emitter Saturation Voltage
vs. Collector Current
100
T = 75°C
A
T = 25°C
A
10
(mA)
T = -25°C
A
A
DC
°
40
xxxx)
50
CAPACITANCE (pF)
C
obo
V , REVERSE VOLTAGE (V)
R
Fig. 26 Typical Capacitance Charact er i st ics
10
V = 0.2
O
1
in
T = 25°C
A
V , INPUT VOLTAGE (V)
1
0.1
LLE
0.01
C
I,
0.001
01234
V , INPUT VOLTAGE (V)
Fig. 27 Collector Current vs. Input Voltage
in
5
67
89
10
0.1
0 1 02 03 04 0
I , COLLECTOR CURRENT (mA)
C
Fig. 28 Input Voltage vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
5 0
9 of 12
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October 2008
© Diodes Incorporated
Page 10
Typical Curves- DCX114TK NPN Section
E
EMI
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001
100
1
0.1
0
Fig. 30 Typical Collector Emitter Saturation Voltage
1,000
100
T = 75°C
A
T = -25°C
A
T = 25°C
A
V = 10
10
FE
h , DC CURRENT GAIN
1
11 0
I , COLLECTOR CURRENT (mA)
Fig. 29 Typical DC Current Gain vs. Collector Current
C
4
CE
I = 0mA
E
100
DC
I/I = 10
CB
T = 75C
°
A
T = -25C
°
T = 25C
°
A
10
I , COLLECTOR CURRENT (mA)
C
20
vs. Collector Current
A
30
40
xxxx)
50
3
2
C
15
obo
3 0
25
1
CAPACITANCE (pF)
0
5
02 0
10
Fig. 31 Typical Capacitance Characteristics
10
V = 0.2
O
1
10
1
0.1
0.01
C
I , COLLECTOR CURRENT (mA)
0.001
012 34
Fig. 32 Collector Current vs. Input Voltage
67
V , INPUT VOLTAGE (V)
in
5
89
10
in
V , INPUT VOLTAGE (V)
0.1
01 02 03 04 0
I , COLLECTOR CURRENT (mA)
C
Fig. 33 Input Volt age vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
5 0
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DC
xxxx)
Ordering Information (Notes 5 & 6)
Part Number
DCX124EK-7 SC-74R 3000/Tape & Reel
DCX144EK-7 SC-74R 3000/Tape & Reel
DCX114YK-7 SC-74R 3000/Tape & Reel
DCX123JK-7 SC-74R 3000/Tape & Reel
DCX114EK-7 SC-74R 3000/Tape & Reel
DCX115EK-7 SC-74R 3000/Tape & Reel
DCX143TK-7 SC-74R 3000/Tape & Reel
DCX114TK-7 SC-74R 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DCX114TK-7-F.
Case Packaging
Marking Information
Date Code Key
Year 2007 2008 2009 10 2011 2012 201 4 2015
Code U V W Y Z C T X A B
Month Feb Mar Apr M Jul Aug Sep Dec Jan ay Jun Oct Nov
Code 2 3 4 5 6 7 8 9 D 1 O N
2006 20 3 201
Cxx
YM
Cxx = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Package Outline Dimensions
K
J
A
SC-74R
B C
H
M
D
L
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
⎯ ⎯
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°
α
All Dimen ns in mm sio
0.95
⎯
Suggested Pad Layout
G
Z
Y
X
DCX (xxxx) K
Document number: DS30350 Rev
. 6 - 2
E E
Dimensions Value (in mm)
Z 3.20
G 1.60
C
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es.com
X 0.55
Y 0.80
C 2.40
E 0.95
October 2008
© Diodes Incorporated
Page 12
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the c o represented on our website, ompanies wh se products are
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life sup t devices o ms without the expressed written por r syste
approval of the President of Diodes Incorporated.
DC
xxxx)
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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© Diodes Incorporated