Diodes DCX-xxxx-K User Manual

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Features

Epitaxial Planar Die Construction
Built-In Biasing Resistors
Available in Lead Free/RoHS Compliant Version (Note 1)
“Green” Device (Note 2)
Part Number R1 R2 Marking
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK
22KΩ 22KΩ 47KΩ 47KΩ 10KΩ 47KΩ
2.2KΩ 47KΩ 10KΩ 10KΩ
100KΩ 100KΩ
4.7KΩ 10KΩ
- C07
- C12
C1 B2 E2
E1 B1 C2
R1, R2 Device Schematic R1 only Device Schematic
C17 C20 C14 C06 C13 C15
R
R
1
R
R
2
1
DC
xxxx)
DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR

Mechanical Data

Case: SC-74R (Note 3)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Table and Page 11
Ordering Information: See Page 11
Weight: 0.015 grams (approximate)
C1 B2 E2
R
2
E1 B1 C2
1
R
1
Maximum Ratings NPN Section @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Output Current All
Thermal Characteristics NPN Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device datasheets for exact details regarding the location of the pin one indicator.
4. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
= 25°C unless otherwise specified
A
VCC DCX124EK DCX144EK DCX114YK
DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK DCX124EK DCX144EK DCX114YK
DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK
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VIN
I
C(MAX)
R
TJ, T
IO
PD
θ
JA
STG
50 V
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-10 to +40
-5V max
-5V max 30 30 70
100
50 20
100 100
100 mA
300 mW 417
-55 to +150
V
mA
°C/W
°C
October 2008
© Diodes Incorporated
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Maximum Ratings PNP Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage
DCX124EK DCX144EK DCX114YK
Input Voltage
DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK DCX124EK DCX144EK DCX114YK
Output Current
DCX123JK DCX114EK DCX115EK DCX143TK DCX114TK
Output Current All
Thermal Characteristics PNP Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Operating and Storage Temperature Range
VCC
VIN
I
C(MAX)
R
TJ, T
IO
PD
θ
JA
STG
DC
xxxx)
50 V
+10 to –40 +10 to –40
+6 to –40 +5 to –12
+10 to –40
V
+10 to –40
+5V max +5V max
-30
-30
-70
-100
-50
mA
-20
-100
-100
-100 mA
300 mW 833
-55 to +150
°C/W
°C
Electrical Characteristics NPN Section @T
= 25°C unless otherwise specified
A
Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
Collector-Emitter Saturation Voltage
BV BV BV
I I
V
CE(SAT)
DC Current Transfer Ratio Input Resistor (R1) Tolerance ΔR1 Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
www.diodes.com
CBO CEO EBO
CBO
EBO
100 250 600
hFE
-30
fT
2 of 12
50
50
5
−−
250
V
IC = 50μA
V
IC = 1mA
V
IE = 50μA
0.5
μA
VCB = 50V
0.5
μA
VEB = 4V
0.3 V
IC/IB = 2.5mA / 0.25mA – DCX143TK IC/IB = 1mA / 0.1mA – DCX114TK
IC = 1mA, VCE = 5V
+30 %
MHz
VCE = 10V, IE = -5mA, f = 100MHz
October 2008
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Electrical Characteristics NPN Section (continued) @T
Characteristic Symbol Min Typ Max Unit Test Condition
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance ΔR1 Resistance Ratio Tolerance Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX115EK DCX124EK
DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK DCX124EK
DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK
V
V
V
I
O(OFF)
R2/R1
Electrical Characteristics PNP Section @T
Characteristic (DCX143TK & DCX114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
Collector-Emitter Saturation Voltage DC Current Transfer Ratio
Input Resistor (R1) Tolerance ΔR1 Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
BV BV BV
I
CBO
I
EBO
V
CE(SAT)
hFE
www.diodes.com
0.5
0.5
0.3
l(OFF)
0.5
0.5
0.5
l(ON)
O(ON)
Il
80 68 68
Gl
80 30 82
-30
-20
fT
= 25°C unless otherwise specified
A
-50
CBO
-50
CEO
-5
EBO
100 250 600
-30
fT
3 of 12
= 25°C unless otherwise specified
A
1.1
1.1
⎯ ⎯
1.1
1.1
1.65
1.9
⎯ ⎯
1.9
1.9
0.1 0.3 V
⎯ ⎯
250
⎯ ⎯ ⎯ ⎯
250
V
3.0
3.0
1.4
1.1
3.0
3.0
0.36
0.18
0.88
3.6
0.88
0.15
0.5
+30 % +20
-0.5
-0.5
-0.3 V
+30 %
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 5mA VO = 0.3V, IO = 2mA VO = 0.3V, IO = 1mA
V
VO = 0.3V, IO = 5mA VO = 0.3V, IO = 10mA VO = 0.3V, IO = 1mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA
mA
VI = 5V
μA
VCC = 50V, VI = 0V VO = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA VO = 5V, IO = 5mA
%
MHz
VCE = 10V, IE = -5mA, f = 100MHz
V
IC = -50μA
V
IC = -1mA
V
IE = -50μA
μA
VCB = -50V
μA
VEB = -4V IC/IB = -2.5mA / -0.25mA - DCX143TK IC/IB = -1mA / -0.1mA - DCX114TK
IC = -1mA, VCE = -5V
MHz
VCE = -10V, IE = 5mA, f = 100MHz
DC
© Diodes Incorporated
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October 2008
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Electrical Characteristics PNP Section (Continued) @T
Characteristic
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance ΔR1 Resistance Ratio Tolerance Gain-Bandwidth Product*
*Transistor - For Reference Only
DCX115EK DCX124EK
DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK
DCX124EK DCX144EK DCX114YK DCX123JK DCX114EK DCX115EK
Symbol Min Typ Max Unit Test Condition
V
l(OFF)
V
l(ON)
V
O(ON)
Il
I
O(OFF)
Gl
R2/R1
fT
-1.1
-0.5
-1.1
-0.5
-0.3
-0.5
-0.5
1.1
-0.5
1.1
-1.9
-1.9
⎯ ⎯
-1.9
-1.9
-0.1 -0.3 V
80 68 68
80 30 82
-30
-20
250
= 25°C unless otherwise specified
A
V
-3.0
-3.0
-1.4
-1.1
-3.0
-3.0
-0.36
-0.18
-0.88
-3.6
-0.88
-0.15
-0.5
+30 % +20
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -5mA VO = -0.3V, IO = -2mA VO = -0.3V, IO = -1mA
V
VO = -0.3V, IO = -5mA VO = -0.3V, IO = -10mA VO = -0.3V, IO = -1mA IO/Il = -10mA /-0.5mA IO/Il = -10mA /-0.5mA IO/Il = -5mA /-0.25mA IO/Il = -5mA /-0.25mA IO/Il = -10mA/-0.5mA IO/Il = -5mA/-0.25mA
mA
VI = -5V
μA
VCC = 50V, VI = 0V VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA VO = -5V, IO = -5mA
%
MHz
VCE = -10V, IE = -5mA, f = 100MHz
DC
xxxx)

Typical Curves – Total Device

) W m
( N
O
I T
A
P
I S S
I D
R E
W O P
,
D
P
T AMBIENT TEMPERATURE (°C)
,
Fig. 1 Pow er Dissipatio n vs. Ambient Temper at ur e
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
A
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Typical Curves – DCX124EK PNP Section

) A
( T
N E R
R U C
R O
T
I = 0.5mA
b
C E
L
L O C
,
C
I
R E
)
T
V
(
T
I
E
M
G
E
-
A
T
R
L
O
O
T
V
C E
N
L
O
L
I T
O
A
C
R
,
)
U
T A
T
S
A
( E
S
C
V
I = 0.6mA
b
I/I = 10
CB
I = 0.7mA
b
T = 85C
°
A
I = 0.8mA
b
I = 0.2mA
b
I = 0.9mA
b
I = 0.3mA
b
T = 125C
°
A
T = -55C
°
A
I = 0.4mA
b
I = 0.1mA
b
T = 150C
A
T = 25C
°
A
°
DC
350
V
= -5V
CE
T = 150 C
A
300
250
200
150
100
50
0
0.1 1 10 100 1,000
V = -5V
CE
T = 85C
A
T = 125C
°
A
°
T = -55C
°
A
T = 25C
°
A
°
T = 125 C
A
T = 85C
A
T = 25C
A
T = 150C
A
xxxx)
°
°
°
°
Fig. 5 Typical Base-Emitter Turn-On Voltage
I/I = 10
CB
T = 85C
T = 125C
°
A
A
T = -55C
°
A
T = 25C
°
A
°
T = 150C
°
A
V = -0.3V
CE
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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vs. Collector Current
T = 25C
A
T = -55C
°
A
T = 150C
A
Fig. 7 V vs. I
°
T = 85C
A
°
°
T = 125C
I(ON) C
°
A
© Diodes Incorporated
October 2008
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Typical Curves – DCX124EK NPN Section
,
FE
C
I , COLLECTOR CURRENT (A)
V , COLLECTOR-EMIT TER VO LTAGE (V)
CE
Fig. 8 Typical Collector Current
vs. Collector-Emitter Voltage
I/I = 10
CB
h DC CURRENT GAIN
DC
V = 5V
CE
T = 25C
A
Fig. 9 Typical DC Current Gain vs. Collector Current
T = 150C
°
A
T = 125C
°
A
T = 85C
°
A
°
T = -55C
°
A
I , COLLECTOR CURRENT (mA)
C
V = 5V
CE
xxxx)
T = 150 C
°
T = 125 C
T = 85C
A
T = -55C
A
SATURATION VOLTAGE (V)
CE(SAT)
V , COLLECTOR-EMITTER
I , COLLECTOR CURRENT (mA)
C
Fig. 10 Collector-Emitter Saturation Voltage
A
°
T = 25C
°
A
vs. Collecto r Cu r re nt
I/I = 10
CB
T = -55C
°
A
T = 25C
°
A
T = 85C
°
A
T = 125C
BE(SAT)
V , BASE-EMITTER
SATURATION VOLTAGE (V)
°
A
T = 150C
A
A
°
T = -55C
°
A
°
T = 125C
°
A
BE(ON)
V , BASE-EMITTER TURN-ON VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
T = 25C
A
T = 85C
°
A
°
T = 150C
°
A
Fig. 11 Base-Emitter Turn-On Voltage
I(ON)
°
V , INPUT VOLTAGE (V)
vs. Collector Current
VCE = 0.3V
T = 125C
°
A
T = 85C
A
°
T = -55C
T = 25C
°
A
°
A
T = 150C
°
A
I , COLLECTOR CURRENT (mA)
C
Fig. 12 Typical Base-Emitter Saturation Voltage
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
vs. Collector Current
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I , OUTPUT CURRENT (mA)
C
Fig. 13 V vs. I
I(ON) C
October 2008
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C CUR
RENT G
C
O
CTO
R
T
T
R
C
O
CTO
R CUR
RENT
Typical Curves – DCX123JK PNP Section
1,000
V = 10
CE
AIN
100
FE
h, D
10
110
I , COLLECTOR CURRENT (mA)
C
Fig. 14 Typical DC Current Gain vs. Collector Current
I = 0mA
E
100
E
EMI
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001
100
DC
1
I/I = 10
CB
0.1
0
10
I , COLLECTOR CURRENT (mA)
C
Fig. 15 Typical Collector Emitter Saturation Voltage
T = 75C
°
A
T = -25C
T = 25C
°
A
20
A
30
vs. Collector Current
°
40
xxxx)
50
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
R
Fig. 16 Typical Capacitance Characteristics
10
V = 0.2
O
T = -25°C
A
1
T = 75C
°
A
10
(mA)
1
0.1
C
obo
LLE
I,
0.01
C
0.001 5
01234 89
V , INPUT VOLTAGE (V)
Fig. 17 Collector Current vs. Input Voltage
in
6
7
10
T = 25°C
in
A
V , INPUT VOLTAGE (V)
0.1 010203040
I , COLLECTOR CURRENT (mA)
C
Fig. 18 In put Voltage vs. Collecto r Cu r r e nt
DCX (xxxx) K
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C CUR
RENT G
C
O
CTO
R
T
TER
C
O
CTO
R CUR
REN
T
Typical Curves – DCX123JK NPN Section
1,000
V = 10
CE
AIN
100
FE
h, D
10
110
I , COLLECTOR CURRENT (mA)
C
Fig. 19 Typical DC Current Gain vs. Collector Current
I = 0mA
E
100
EMI
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001
100
1
I/I = 10
CB
0.1
0
10
I , COLLECTOR CURRENT (mA)
C
T = 75C
T = 25C
°
A
20
°
A
30
Fig. 20 Collector Emitter Saturation Voltage
vs. Collector Current
DC
T = -25C
°
A
40
xxxx)
50
V , REVERSE VOLTAGE (V)
R
Fig. 21 Typical Capacit ance Characteristics
10
V = 0.2
O
T = -25°C
A
1
10
(mA)
1
0.1
C
obo
LLE
0.01
C
I,
0.001 67
0
234
1
V , INPUT VOLTAGE (V)
in
5
Fig. 22 Collector Current vs. Input Voltage
89
10
in
V , INPUT VOLTAGE (V)
0.1 010203040
I , COLLECTOR CURRENT (mA)
C
Fig. 23 Input Voltage vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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C
O
CTO
R
T
TER
C CUR
REN
T GAIN
C
O
CTO
R CUR
REN
T
Typical Curves – DCX114TK PNP Section
1,000
100
10
FE
h, D
1
110
I , COLLECTOR CURRENT (mA)
C
Fig. 24 Typical DC Current Gain vs. Collector Current
I = 0mA
E
100
1
I/I = 10
CB
T = 75C
0.1
EMI
T = 25C
A
°
A
T = -25C
°
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001 0
10
I , COLLECTOR CURRENT (mA)
C
20
30
Fig. 25 Typical Collector Emitter Saturation Voltage
vs. Collector Current
100
T = 75°C
A
T = 25°C
A
10
(mA)
T = -25°C
A
A
DC
°
40
xxxx)
50
CAPACITANCE (pF)
C
obo
V , REVERSE VOLTAGE (V)
R
Fig. 26 Typical Capacitance Charact er i st ics
10
V = 0.2
O
1
in
T = 25°C
A
V , INPUT VOLTAGE (V)
1
0.1
LLE
0.01
C
I,
0.001 01234
V , INPUT VOLTAGE (V)
Fig. 27 Collector Current vs. Input Voltage
in
5
67
89
10
0.1 0 10203040
I , COLLECTOR CURRENT (mA)
C
Fig. 28 Input Voltage vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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C
O
CTO
R
T
T
R
Typical Curves- DCX114TK NPN Section
E
EMI
LLE
0.01
SATURATION VOLTAGE (V)
CE(SAT)
V,
0.001
100
1
0.1
0
Fig. 30 Typical Collector Emitter Saturation Voltage
1,000
100
T = 75°C
A
T = -25°C
A
T = 25°C
A
V = 10
10
FE
h , DC CURRENT GAIN
1
110
I , COLLECTOR CURRENT (mA)
Fig. 29 Typical DC Current Gain vs. Collector Current
C
4
CE
I = 0mA
E
100
DC
I/I = 10
CB
T = 75C
°
A
T = -25C
°
T = 25C
°
A
10
I , COLLECTOR CURRENT (mA)
C
20
vs. Collector Current
A
30
40
xxxx)
50
3
2
C
15
obo
30
25
1
CAPACITANCE (pF)
0
5
020
10
Fig. 31 Typical Capacitance Characteristics
10
V = 0.2
O
1
10
1
0.1
0.01
C
I , COLLECTOR CURRENT (mA)
0.001 012 34
Fig. 32 Collector Current vs. Input Voltage
67
V , INPUT VOLTAGE (V)
in
5
89
10
in
V , INPUT VOLTAGE (V)
0.1 010203040
I , COLLECTOR CURRENT (mA)
C
Fig. 33 Input Volt age vs. Collector Current
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
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DC
xxxx)
Ordering Information (Notes 5 & 6)
Part Number
DCX124EK-7 SC-74R 3000/Tape & Reel DCX144EK-7 SC-74R 3000/Tape & Reel DCX114YK-7 SC-74R 3000/Tape & Reel
DCX123JK-7 SC-74R 3000/Tape & Reel DCX114EK-7 SC-74R 3000/Tape & Reel DCX115EK-7 SC-74R 3000/Tape & Reel DCX143TK-7 SC-74R 3000/Tape & Reel DCX114TK-7 SC-74R 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DCX114TK-7-F.
Case Packaging

Marking Information

Date Code Key
Year 2007 2008 2009 10 2011 2012 201 4 2015
Code U V W Y Z C T X A B
Month Feb Mar Apr M Jul Aug Sep Dec Jan ay Jun Oct Nov
Code 2 3 4 5 6 7 8 9 D 1 O N
2006 20 3 201
Cxx
YM
Cxx = Product Type Marking Code (See Page 1) YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)

Package Outline Dimensions

K
J
A
SC-74R
B C
H
M
D
L
Dim Min Max Typ
A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D
H 2.90 3.10 3.00
J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15
0° 8°
α
All Dimen ns in mmsio
0.95

Suggested Pad Layout

G
Z
Y
X
DCX (xxxx) K
Document number: DS30350 Rev
. 6 - 2
EE
Dimensions Value (in mm)
Z 3.20 G 1.60
C
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www.diod
es.com
X 0.55 Y 0.80 C 2.40 E 0.95
October 2008
© Diodes Incorporated
Page 12
(
K
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the c o represented on our website, ompanies wh se products are harmless against all damages.
LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life sup t devices o ms without the expressed written por r syste approval of the President of Diodes Incorporated.
DC
xxxx)
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
12 of 12
www.diodes.com
October 2008
© Diodes Incorporated
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