Diodes DCX-xxxx-K User Manual
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Features
• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• Available in Lead Free/RoHS Compliant Version (Note 1)
• “Green” Device (Note 2)
Part Number R1 R2 Marking
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
22KΩ 22KΩ
47KΩ 47KΩ
10KΩ 47KΩ
2.2KΩ 47KΩ
10KΩ 10KΩ
100KΩ 100KΩ
4.7KΩ
10KΩ
- C07
- C12
C1 B2 E2
E1 B1 C2
R1, R2 Device Schematic R1 only Device Schematic
C17
C20
C14
C06
C13
C15
R
R
1
R
R
2
1
DC
xxxx)
DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR
Mechanical Data
• Case: SC-74R (Note 3)
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Table and Page 11
• Ordering Information: See Page 11
• Weight: 0.015 grams (approximate)
C1 B2 E2
R
2
E1 B1 C2
1
R
1
Maximum Ratings NPN Section @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Output Current All
Thermal Characteristics NPN Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device
datasheets for exact details regarding the location of the pin one indicator.
4. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be
exceeded.
= 25°C unless otherwise specified
A
VCC
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
1 of 12
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VIN
I
C(MAX)
R
TJ, T
IO
PD
θ
JA
STG
50 V
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-10 to +40
-5V max
-5V max
30
30
70
100
50
20
100
100
100 mA
300 mW
417
-55 to +150
V
mA
°C/W
°C
October 2008
© Diodes Incorporated
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Maximum Ratings PNP Section @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage
DCX124EK
DCX144EK
DCX114YK
Input Voltage
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
DCX124EK
DCX144EK
DCX114YK
Output Current
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
Output Current All
Thermal Characteristics PNP Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
VCC
VIN
I
C(MAX)
R
TJ, T
IO
PD
θ
JA
STG
DC
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50 V
+10 to –40
+10 to –40
+6 to –40
+5 to –12
+10 to –40
V
+10 to –40
+5V max
+5V max
-30
-30
-70
-100
-50
mA
-20
-100
-100
-100 mA
300 mW
833
-55 to +150
°C/W
°C
Electrical Characteristics NPN Section @T
= 25°C unless otherwise specified
A
Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
BV
BV
BV
I
I
V
CE(SAT)
DC Current Transfer Ratio
Input Resistor (R1) Tolerance ΔR1
Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
www.diodes.com
CBO
CEO
EBO
⎯ ⎯
CBO
⎯ ⎯
EBO
100 250 600
hFE
-30
fT ⎯
2 of 12
50
⎯ ⎯
50
⎯ ⎯
5
⎯ −−
⎯ ⎯
⎯
250
V
IC = 50μA
V
IC = 1mA
V
IE = 50μA
0.5
μA
VCB = 50V
0.5
μA
VEB = 4V
0.3 V
IC/IB = 2.5mA / 0.25mA – DCX143TK
IC/IB = 1mA / 0.1mA – DCX114TK
⎯ IC = 1mA, VCE = 5V
+30 %
MHz
⎯
VCE = 10V, IE = -5mA, f = 100MHz
⎯
October 2008
© Diodes Incorporated
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Electrical Characteristics NPN Section (continued) @T
Characteristic Symbol Min Typ Max Unit Test Condition
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance ΔR1
Resistance Ratio Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
V
V
V
I
O(OFF)
R2/R1
Electrical Characteristics PNP Section @T
Characteristic (DCX143TK & DCX114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R1) Tolerance ΔR1
Gain-Bandwidth Product*
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
BV
BV
BV
I
CBO
I
EBO
V
CE(SAT)
hFE
www.diodes.com
0.5
0.5
0.3
l(OFF)
0.5
0.5
0.5
⎯
l(ON)
⎯
O(ON)
Il ⎯ ⎯
⎯ ⎯
80
68
68
Gl
80
30
82
-30
-20
⎯
fT
= 25°C unless otherwise specified
A
-50
CBO
-50
CEO
-5
EBO
⎯ ⎯
⎯ ⎯
⎯ ⎯
100 250 600
-30
fT ⎯
3 of 12
= 25°C unless otherwise specified
A
1.1
1.1
⎯
⎯
1.1
1.1
1.65
1.9
⎯
⎯
1.9
1.9
0.1 0.3 V
⎯ ⎯ ⎯
⎯
⎯
250
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
250
V
⎯
3.0
3.0
1.4
1.1
3.0
3.0
0.36
0.18
0.88
3.6
0.88
0.15
0.5
+30 %
+20
⎯
-0.5
-0.5
-0.3 V
+30 %
⎯
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 2mA
VO = 0.3V, IO = 1mA
V
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 1mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
IO/Il = 5mA / 0.25mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
mA
VI = 5V
μA
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
% ⎯
MHz
VCE = 10V, IE = -5mA, f = 100MHz
V
IC = -50μA
V
IC = -1mA
V
IE = -50μA
μA
VCB = -50V
μA
VEB = -4V
IC/IB = -2.5mA / -0.25mA - DCX143TK
IC/IB = -1mA / -0.1mA - DCX114TK
⎯ IC = -1mA, VCE = -5V
MHz
VCE = -10V, IE = 5mA, f = 100MHz
⎯
⎯
DC
© Diodes Incorporated
xxxx)
October 2008
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Electrical Characteristics PNP Section (Continued) @T
Characteristic
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance ΔR1
Resistance Ratio Tolerance
Gain-Bandwidth Product*
*Transistor - For Reference Only
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
Symbol Min Typ Max Unit Test Condition
V
l(OFF)
V
⎯
l(ON)
V
⎯
O(ON)
Il
I
⎯ ⎯
O(OFF)
Gl
R2/R1
fT ⎯
-1.1
-0.5
-1.1
-0.5
⎯
-0.3
-0.5
⎯
-0.5
−1.1
-0.5
−1.1
-1.9
-1.9
⎯
⎯
-1.9
-1.9
-0.1 -0.3 V
⎯ ⎯
80
68
68
⎯ ⎯ ⎯
80
30
82
-30
⎯
-20
⎯
250
= 25°C unless otherwise specified
A
V
⎯
-3.0
-3.0
-1.4
-1.1
-3.0
-3.0
-0.36
-0.18
-0.88
-3.6
-0.88
-0.15
-0.5
+30 %
+20
⎯
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -5mA
VO = -0.3V, IO = -2mA
VO = -0.3V, IO = -1mA
V
VO = -0.3V, IO = -5mA
VO = -0.3V, IO = -10mA
VO = -0.3V, IO = -1mA
IO/Il = -10mA /-0.5mA
IO/Il = -10mA /-0.5mA
IO/Il = -5mA /-0.25mA
IO/Il = -5mA /-0.25mA
IO/Il = -10mA/-0.5mA
IO/Il = -5mA/-0.25mA
mA
VI = -5V
μA
VCC = 50V, VI = 0V
VO = -5V, IO = -5mA
VO = -5V, IO = -5mA
VO = -5V, IO = -10mA
VO = -5V, IO = -10mA
VO = -5V, IO = -5mA
VO = -5V, IO = -5mA
% ⎯
MHz
VCE = -10V, IE = -5mA, f = 100MHz
⎯
DC
xxxx)
Typical Curves – Total Device
)
W
m
(
N
O
I
T
A
P
I
S
S
I
D
R
E
W
O
P
,
D
P
T AMBIENT TEMPERATURE (°C)
,
Fig. 1 Pow er Dissipatio n vs. Ambient Temper at ur e
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
A
4 of 12
www.diodes.com
October 2008
© Diodes Incorporated
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