Diodes DCX-LO-R1-H User Manual
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
NE P DUCP DUCW RO T T RO
• Weight: 0.005 grams (approximate)
P/N R1 (NOM) R2 (NOM) MARKING
DCX122LH
DCX142JH
DCX122TH
DCX142TH
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
C81
C82
C83
C84
K
DCX (LO-R1) HDCX (LO-R1) H
A
CXXYM
B
C
D
G
M
H
R
R
1
R
R
2
1
R1, R2 R
SCHEMATIC DIAGRAM, TOP VIEW
L
2
SOT-563
Dim Min Max Typ
A 0.15 0.30 0.25
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.56 0.60 0.60
L 0.15 0.25 0.20
M 0.10 0.18 0.11
All Dimensions in mm
R
1
R
1
Only
1
Maximum Ratings NPN Section @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage DCX122LH
DCX142JH
Input Voltage DCX122TH
DCX142TH
Output Current All
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. NPN Section, PNP Section, or maximum combined.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30429 Rev. 3 - 2
= 25°C unless otherwise specified
A
VCC
VIN
V
EBO (MAX)
Tj, T
1 of 4
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R
IC
Pd
θ
JA
STG
-5 to +6
-5 to +6
-55 to +150
50 V
V
5 V
100 mA
150 mW
833
°C/W
°C
DCX (LO-R1) H
© Diodes Incorporated
Maximum Ratings PNP Section @T
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage DCX122LH
DCX142JH
Input Voltage DCX122TH
DCX142TH
Output Current All
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
NEW PRODUCT
Electrical Characteristics NPN Section @T
Characteristic Symbol Min Typ Max Unit Test Condition
DCX122LH
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
DCX142JH
DCX122LH
DCX142JH
DCX122LH
DCX142JH
DDCX122LH
DDCX142JH
= 25°C unless otherwise specified
A
VCC
VIN
V
EBO (MAX)
IC
Pd
R
JA
θ
Tj, T
STG
= 25°C unless otherwise specified R1, R2 Types
A
V
l(off)
V
l(on)
V
⎯ ⎯
O(on)
Il
I
⎯ ⎯
O(off)
Gl
0.3
0.3
⎯ ⎯
⎯ ⎯
56
56
⎯ ⎯
2.0
2.0
0.3V V
28
13
0.5
⎯ ⎯ ⎯
-50 V
+5 to -6
+5 to -6
-5 V
-100 mA
150 mW
833
-55 to +150
V
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
V
VO = 0.3V, IO = 20mA
IO/Il = 5mA/0.25mA
mA
VI = 5V
μA
VCC = 50V, VI = 0V
VO = 5V, IO = 10mA
V
°C/W
°C
Gain-Bandwidth Product*
* Transistor - For Reference Only
fT ⎯
Electrical Characteristics NPN Section @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH
Collector Cutoff Current
Emitter Cutoff Current
DCX122TH
DCX142TH
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DCX122TH
DCX142TH
Gain-Bandwidth Product*
* Transistor - For Reference Only
BV
BV
BV
I
I
V
CE(sat)
hFE
CBO
CEO
EBO
CBO
EBO
fT
DS30429 Rev. 3 - 2
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200
= 25°C unless otherwise specified R1-Only
A
50
40
5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯ ⎯
100
100
⎯
250
250
200
MHz
⎯
0.5
0.5
0.5
0.3 V
600
600
⎯
VCE = 10V, IE = 5mA, f = 100MHz
V
IC = 50μA
V
IC = 1mA
IE = 50μA
V
IE = 50μA
μA
VCB = 50V
μA
VEB = 4V
IC = 5mA, IB = 0.25mA
⎯
IC = 1mA, VCE = 5V
MHz
VCE = 10V, IE = -5mA, f = 100MHz
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DCX (LO-R1) H
© Diodes Incorporated
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