Diodes DCX69 User Manual

R

Y

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

SOT89

Top View

COLLECTOR

1

BASE

Device Schematic Pin Out Configuration

2,4

3

EMITTE

DCX69/-16/-25

PNP SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Weight: 0.055 grams (approximate)

E

3

C

C

4

Top Vi ew

2

B

1

Ordering Information (Note 3)

Part Number Case Packaging

DCX69-13 SOT89 2500/Tape & Reel
DCX69-16-13 SOT89 2500/Tape & Reel
DCX69-25TA SOT89 1000/Tape & Reel
DCX69-25-13 SOT89 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. For packaging details, go to our website at http://www.diodes.com.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

DCX69/-16/-25

Document number: DS31264 Rev. 6 - 2

WW

xxx

www.diodes.com

xxx = Product Type Marking Code:
P12 = DCX69
P12-16 = DCX69-16
P12-25 = DCX69-25
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)

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April 2012

© Diodes Incorporated

θ

(BR)

(BR)

(BR)

)

DCX69/-16/-25

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Power

V

CBO

V

CEO

V

EBO

I

C

I

CM

-25 V

-20 V

-5.0 V

-1.0 A

-2.0 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 4)
Operating and Storage Temperature Range

R

JA

T

, T

J

STG

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current
Emitter-Base Cutoff Current

V

CBO

V

CEO

V

EBO

I

CBO

I

EBO

-25

-20

-5.0

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯ ⎯

⎯ ⎯

-100

-10

-100 nA

ON CHARACTERISTICS (Note 5)

DCX69, DCX69-16, DCX69-25

DC Current Gain

Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage

50
60

DCX69 85

h

FE

DCX69-16 100
DCX69-25 160

⎯ ⎯

V

CE(SAT

V

⎯

BE(ON)

⎯
⎯

⎯

⎯
⎯

⎯
⎯

⎯
⎯

375
250
375

-0.5 V

-0.7

-1.0

SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance

Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at

http://www.diodes.com.

5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

f

T

C

obo

40 200

⎯

17

⎯
⎯

DCX69/-16/-25

Document number: DS31264 Rev. 6 - 2

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1 W

125 °C/W

-55 to +150 °C

V

I

= -100μA, IE = 0

C

V

I

= -10mA, IB = 0

C

V

I

= -100μA, IC = 0

E

nA
μA

= -25V, IE = 0

V

CB

= -25V, IE = 0, TA = 150°C

V

CB

VEB = -5.0V, IC = 0

V

⎯

⎯

= -10V, IC = -5.0mA

CE

= -1.0V, IC = -1.0A

V

CE

⎯ VCE = -1.0V, IC = -500mA
⎯ V

⎯

= -1.0V, IC = -500mA

CE

= -1.0V, IC = -500mA

V

CE

IC = -1.0A, IB = -100mA

= -10V, IC = -5mA

V

CE

V

V

= -1.0V, IC = -500mA

CE

V

= -5.0V, IC = -50mA,

CE

MHz

f = 100MHz

pF

VCB = -10V, f = 1MHz

April 2012

© Diodes Incorporated

P, P

O

R

P

T

O

N

C

O

C

TOR CUR

REN

T

C CUR

RENT G

C

O

CTO

R

T

TER

T

T

R

TURN-O

OLTAG

T

TER

DCX69/-16/-25

1.0

0.8

(mW)
I

0.6

A

DISSI

0.4

WE

D

0.2

350

300

250

AIN

200

150

FE

100

h, D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

Fig. 1 Power Dissipation vs.

Ambient Temperature ( Note 4)

V = -1V

CE

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

1.8

1.6

I = -10mA

1.4

(A)

1.2

1.0

B

I = -8mA

B

I = -6mA

B

0.8

LLE

0.6

0.4

C

-I ,

I = -4mA

B

I = -2mA

B

0.2
0

012345678910

-V , COLLECTOR EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

0.6

0.5

-EMI

0.4

0.3

LLE

0.2

SATURATION VOLTAGE (V)

CE(SAT)

-V ,

0.1

I/I = 10

CB

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

Fig. 3 Typical DC Current Gain

vs. Collector Current (DCX69-16)

1.2

0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

1.2

E (V)

1.0

1.0

N V

0.8

T = -55°C

A

0.6

T = 25°C

E

A

T = 85°C

A

0.4

T = 150°C

A

0.2

BE(ON)

0

-V , BASE-EM I

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

V = -1V

CE

vs. Collector Current

DCX69/-16/-25

Document number: DS31264 Rev. 6 - 2

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0.8

T = -55°C

A

0.6

T = 25°C

A

T = 85°C

A

0.4

BE(SAT)

-V , BASE-EMI

T = 150°C

A

SATURATION VOLTAGE (V)

I/I = 10

0.2

0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

CB

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

April 2012

© Diodes Incorporated

CUR

RENT G

T

H PRODUCT

H

DCX69/-16/-25

60

z)

250

(M

50

f = 1MHz

200

40

150

30

100

20

OBO

10

C , OUTPUT CAPACITANCE (pF)

0

0.01 0.1 1 10 100

Fig. 7 Typical Output Ca pacita nce Charact eristics

V , REVERSE VOLTAGE (V)

R

AIN-BANDWID

V = -5V

50

T

0

f,

CE

f = 100MHz

020406080100

-I , COLLECTOR CURRENT (mA)

Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current

C

Package Outline Dimensions

D1

E

B1

B

8

°

e1

(

4

X

)

D

0

0

2

.

0

R

C

SOT89

Dim Min Max

A 1.40 1.60
B 0.44 0.62

H

L

e

B1 0.35 0.54

C 0.35 0.43
D 4.40 4.60

D1 1.52 1.83

E 2.29 2.60
e 1.50 Typ

e1 3.00 Typ

H 3.94 4.25

A

L 0.89 1.20
All Dimensions in mm

Suggested Pad Layout

Y3

Y

DCX69/-16/-25

Document number: DS31264 Rev. 6 - 2

X (3x)

X1

X2 (2x)

Y2

Dimensions Value (in mm)

X 0.900

X1 1.733

Y1

Y4

X2 0.416

Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950

C

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Y4 1.125

C 1.500

April 2012

© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

DCX69/-16/-25

DCX69/-16/-25

Document number: DS31264 Rev. 6 - 2

5 of 5

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April 2012

© Diodes Incorporated