Diodes DCX69 User Manual
R
Y
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
SOT89
Top View
COLLECTOR
1
BASE
Device Schematic Pin Out Configuration
2,4
3
EMITTE
DCX69/-16/-25
PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.055 grams (approximate)
E
3
C
C
4
Top Vi ew
2
B
1
Ordering Information (Note 3)
Part Number Case Packaging
DCX69-13 SOT89 2500/Tape & Reel
DCX69-16-13 SOT89 2500/Tape & Reel
DCX69-25TA SOT89 1000/Tape & Reel
DCX69-25-13 SOT89 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. For packaging details, go to our website at http://www.diodes.com.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
WW
xxx
www.diodes.com
xxx = Product Type Marking Code:
P12 = DCX69
P12-16 = DCX69-16
P12-25 = DCX69-25
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
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April 2012
© Diodes Incorporated
θ
(BR)
(BR)
(BR)
)
DCX69/-16/-25
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Power
V
CBO
V
CEO
V
EBO
I
C
I
CM
-25 V
-20 V
-5.0 V
-1.0 A
-2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 4)
Operating and Storage Temperature Range
R
JA
T
, T
J
STG
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
-25
-20
-5.0
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100
-10
-100 nA
ON CHARACTERISTICS (Note 5)
DCX69, DCX69-16, DCX69-25
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
50
60
DCX69 85
h
FE
DCX69-16 100
DCX69-25 160
⎯ ⎯
V
CE(SAT
V
⎯
BE(ON)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
375
250
375
-0.5 V
-0.7
-1.0
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
obo
40 200
⎯
17
⎯
⎯
DCX69/-16/-25
Document number: DS31264 Rev. 6 - 2
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www.diodes.com
1 W
125 °C/W
-55 to +150 °C
V
I
= -100μA, IE = 0
C
V
I
= -10mA, IB = 0
C
V
I
= -100μA, IC = 0
E
nA
μA
= -25V, IE = 0
V
CB
= -25V, IE = 0, TA = 150°C
V
CB
VEB = -5.0V, IC = 0
V
⎯
⎯
= -10V, IC = -5.0mA
CE
= -1.0V, IC = -1.0A
V
CE
⎯ VCE = -1.0V, IC = -500mA
⎯ V
⎯
= -1.0V, IC = -500mA
CE
= -1.0V, IC = -500mA
V
CE
IC = -1.0A, IB = -100mA
= -10V, IC = -5mA
V
CE
V
V
= -1.0V, IC = -500mA
CE
V
= -5.0V, IC = -50mA,
CE
MHz
f = 100MHz
pF
VCB = -10V, f = 1MHz
April 2012
© Diodes Incorporated
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