Diodes DCX68 User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary
• Ideally
Suited for Automated Assembly Processes
• Ideal for Medium Pow
• Lead Free By
• "Green" Dev
PNP Type Available (DCX69)
er Switching or Amplification Applications
Design/RoHS Compliant (Note 1)
ice (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL F
lammability Classification Rating 94V-0
• Moisture Sensitivity
NEW PRODUCT
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
: Level 1 per J-STD-020D
DCX68/-25
NPN SURFACE MOUNT TRANSISTOR
SOT89-3L
T
O
R
L
L
C
E
C
O
E
3
C
C
4
O
T
2
B
1
W
E
I
V
P
B
Schematic and Pin Configuration
2,4
1
E
S
A
3
E
T
I
M
T
E
R
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
I
CM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DCX68, DCX68-25
DC Current Gain
DCX68 85 375
DCX68-25
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Notes: 1. No purposefully added lead.
4. Measured under pulsed conditions. Pulse width = 300μs. D
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(ON)
f
T
C
obo
uty cycle ≤2%.
T
25
20
5.0
⎯ ⎯
⎯ ⎯
50
60
160
⎯ ⎯
⎯ ⎯
⎯
⎯ ⎯
C
D
R
JA
θ
, T
J
STG
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
330
25 V
20 V
5.0 V
1.0 A
2.0 A
1 W
125 °C/W
-55 to +150 °C
V
= 100μA, IE = 0
I
C
V
= 10mA, IB = 0
I
C
V
= 100μA, IC = 0
I
E
= 25V, IE = 0
0.1
10
10
⎯
⎯
375
0.5 V
1.0 V
⎯
25 pF
μA
μA
⎯
MHz
V
CB
= 25V, IE = 0, TA = 150°C
V
CB
= 5.0V, IC = 0
V
EB
V
= 10V, IC = 5.0mA
CE
V
= 1.0V, IC = 1.0A
CE
= 1.0V, IC = 500mA
V
CE
V
= 1.0V, IC = 500mA
CE
= 1.0A, IB = 100mA
I
C
= 1.0A, VCE = 1.0V
I
C
= 5.0V, IC = 100mA,
V
CE
f = 100MHz
= 10V, IE = 0, f = 1MHz
V
CB
DS31163 Rev. 4 - 2
1 of 4
www.diodes.com
DCX68/-25
© Diodes Incorporated
C
O
CTO
R CUR
REN
T
NEW PRODUCT
1.6
1.4
(A)
1.2
1.0
0.8
0.6
LLE
0.4
C
I,
0.2
0.0
0246
V , COL LECT OR EM ITTER VOLTAGE (V )
CE
0.5
810
0.4
0.3
0.2
SATURATION VOLT AGE (V)
CE(SAT)
0.1
V , COLLECTOR EMITTER
0
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
BE(ON)
V , BASE EMITTER TURN-ON VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
BE(SAT)
V , BASE EMITTER SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
DS31163 Rev. 4 - 2
www.
2 of 4
diodes.com
DCX68/-25
© Diodes Incorporated
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