Diodes DCX100NS User Manual

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General Descriptions

• DCX100NS is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point
of load. It features a discrete PNP pass transistor which
can support continuous maximum current up to 100 mA. It
also contains an NPN transistor which can be used as a
control switch and can also be biased using higher
supply. The component devices can be used as part of a
circuit or as stand alone discrete devices.

Features

• Built in Biasing Resistors

• Epitaxial Planar Die Construction

• Lead Free By Design/ROHS Compliant (Note 1)

• "Green" Device (Note 2)

• Ideally Suited for Automated Assembly Processes

DCX100NS

100mA DUAL PRE-BIASED TRANSISTORS

SOT-563

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic. "Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0035 grams (approximate)

Reference Device Type R1 (NOM)

Q1 PNP
Q2 NPN

1KΩ

⎯

Maximum Ratings: Total Device @T

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Collector Current (using PNP as Pass Transistor)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Junction Temperature Range

R2 (NOM) R3, R4 (NOM)

10KΩ

⎯

= 25°C unless otherwise specified

A

⎯

10KΩ

PD

I

C(max

R

TJ, T

JA

STG

Schematic and Pin Configuration

150 mW
100 mA
833

-55 to +150 °C

°C/W

Sub-Component Device - Pre-Biased PNP Transistor @T

Supply Voltage
Input Voltage
Output Current

Notes: 1. No purposefully added lead.

our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30761 Rev. 6 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on

Characteristic Symbol Value Unit

Vcc
Vin

Ic

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= 25°C unless otherwise specified

A

-50 V

+5 to -10 V

-100 mA

© Diodes Incorporated

DCX100NS

)

)

)

)

)

)

)

)

P, P

OWER

PATIO

N

Sub-Component Device - Pre-Biased NPN Transistor @T

Characteristic Symbol Value Unit

Supply Voltage
Input Voltage
Output Current

Vcc
Vin

IO

= 25°C unless otherwise specified

A

50 V

-10 to +40 V
50 mA

Electrical Characteristics: Pre-Biased PNP Transistor @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage
Output Voltage

Input Current
Output Current
DC Current Gain
Input Resistor Tolerance

-0.3

V

I(off

V

⎯ ⎯

I(on

V

⎯

O(on

II ⎯ ⎯

⎯ ⎯

I

O(off

G

I

Δ R1

33

-30

⎯ ⎯

-3.0 V

0.1 -0.3 V

-7.2 mA

-0.5 uA

⎯ ⎯ ⎯
⎯

+30 %

Resistance Ratio Tolerance R2/R1 0.8 1 1.2 %
Gain-Bandwidth Product

Electrical Characteristics: Pre-Biased NPN Transistor @T

f

⎯

T

250

⎯

A

MHz

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage
Output Voltage

Input Current
Output Current
DC Current Gain
Input Resistor Tolerance

V

I(off

V

⎯

I(on

V

O(on

I

I

I

⎯ ⎯

O(off

G

I

ΔR1

0.5 1.18

⎯
⎯ ⎯

30

-30

⎯

1.85 3 V

0.1 0.3 V

0.88 mA

0.5 uA

⎯ ⎯ ⎯ VO = 5V, IO = 5mA

⎯

+30 %

Resistor Ratio Tolerance R2/R1 0.8 1 1.2
Gain-Bandwidth Product

f

⎯

T

250

⎯

V

V

= -5V, IO = -100uA

CC

VO = -0.3V, IO = -20mA
I

= -10mA /-0.5mA

O/II

VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -5mA

= -10V, IE = -5mA,

V

CE

f = 100 MHz

V

VCC = 5V, IO = 100uA
VO = 0.3V, IO = 10mA
IO/II = 10mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V

⎯ ⎯

V

= 10V, IE = 5mA,

MHz

CE

f = 100 MHz

⎯

⎯

⎯

Typical Characteristics @T

= 25°C unless otherwise specified

A

250

200

(mW)

150

DISSI

100

D

50

0

-50

DS30761 Rev. 6 - 2

050100150

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Derating Curve (Total Device)

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DCX100NS

© Diodes Incorporated

C

O

C

TOR CUR

R

T

C CUR

RENT G

C

O

CTO

R

T

TER

PUT VO

TAG

Characteristics Curves of PNP Transistor (Q1) @T

AIN

FE

h, D

300

250

200

150

100

50

100

0.2

0.18

0.16

(A)

0.14

EN

0.12

0.1

0.08

LLE

0.06

C

0.04

I,

0.02
0

0

0.2 0.4 0.6 0.8

V

, COLLECTOR EMITTER VOLTAGE (V)

CE

1

1.2 1.4

1.6

1.8

2

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

100

I/I=10

cb

10

= 25°C unless otherwise specified

A

T = 150C

°

A

°

10

100 1,000

0

0.1

V = 5V

CE

T = 125C

A

T = 85C

°

A

1

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain vs. Collector Current

I/I=20

cb

10

1

T = 150 C

°

A

T = 125 C

°

0.1

SATURATION VOL TAGE (V)

CE(SAT)

V , COLLECTOR-EMITTER

0.01

0.1 1 10 100

A

T = 25C

T = 85C

A

I , COLLECTOR CURRENT (mA)

C

A

°

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

15

V = 0.3V

CE

12

E (V)

9

L

6

IN

3

T =-55°C

A

T = -55C

A

°

-EMI

1

T =150°C

A

LLE

T =125°C

A

T =-55°C

0.1

SATURATION VOLTAGE (V)

°

CE(SAT)

V,

T =85°C

A

A

T = 25°C

A

0.01

1,000

0.1

1

I , COLLECTOR CURRENT (mA)

C

10 100 1,000

Fig. 5 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

2

1.8

1.6

1.4

1.2
1

0.8

0.6

0.4

0.2

0

0.1

1100

I , COLLECTOR CURRENT (mA)

C

10

Fig. 6 Typical Input Voltage vs. Collector Current

DS30761 Rev. 6 - 2

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0

0.1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current

DCX100NS

© Diodes Incorporated