Diodes DCX100NS User Manual

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General Descriptions

• DCX100NS is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point
of load. It features a discrete PNP pass transistor which
can support continuous maximum current up to 100 mA. It
also contains an NPN transistor which can be used as a
control switch and can also be biased using higher
supply. The component devices can be used as part of a
circuit or as stand alone discrete devices.

Features

• Built in Biasing Resistors

• Epitaxial Planar Die Construction

• Lead Free By Design/ROHS Compliant (Note 1)

• "Green" Device (Note 2)

• Ideally Suited for Automated Assembly Processes

DCX100NS

100mA DUAL PRE-BIASED TRANSISTORS

SOT-563

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic. "Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0035 grams (approximate)

Reference Device Type R1 (NOM)

Q1 PNP
Q2 NPN

1KΩ

⎯

Maximum Ratings: Total Device @T

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Collector Current (using PNP as Pass Transistor)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Junction Temperature Range

R2 (NOM) R3, R4 (NOM)

10KΩ

⎯

= 25°C unless otherwise specified

A

⎯

10KΩ

PD

I

C(max

R

TJ, T

JA

STG

Schematic and Pin Configuration

150 mW
100 mA
833

-55 to +150 °C

°C/W

Sub-Component Device - Pre-Biased PNP Transistor @T

Supply Voltage
Input Voltage
Output Current

Notes: 1. No purposefully added lead.

our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30761 Rev. 6 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on

Characteristic Symbol Value Unit

Vcc
Vin

Ic

1 of 6

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= 25°C unless otherwise specified

A

-50 V

+5 to -10 V

-100 mA

© Diodes Incorporated

DCX100NS

)

)

)

)

)

)

)

)

P, P

OWER

PATIO

N

Sub-Component Device - Pre-Biased NPN Transistor @T

Characteristic Symbol Value Unit

Supply Voltage
Input Voltage
Output Current

Vcc
Vin

IO

= 25°C unless otherwise specified

A

50 V

-10 to +40 V
50 mA

Electrical Characteristics: Pre-Biased PNP Transistor @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage
Output Voltage

Input Current
Output Current
DC Current Gain
Input Resistor Tolerance

-0.3

V

I(off

V

⎯ ⎯

I(on

V

⎯

O(on

II ⎯ ⎯

⎯ ⎯

I

O(off

G

I

Δ R1

33

-30

⎯ ⎯

-3.0 V

0.1 -0.3 V

-7.2 mA

-0.5 uA

⎯ ⎯ ⎯
⎯

+30 %

Resistance Ratio Tolerance R2/R1 0.8 1 1.2 %
Gain-Bandwidth Product

Electrical Characteristics: Pre-Biased NPN Transistor @T

f

⎯

T

250

⎯

A

MHz

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage
Output Voltage

Input Current
Output Current
DC Current Gain
Input Resistor Tolerance

V

I(off

V

⎯

I(on

V

O(on

I

I

I

⎯ ⎯

O(off

G

I

ΔR1

0.5 1.18

⎯
⎯ ⎯

30

-30

⎯

1.85 3 V

0.1 0.3 V

0.88 mA

0.5 uA

⎯ ⎯ ⎯ VO = 5V, IO = 5mA

⎯

+30 %

Resistor Ratio Tolerance R2/R1 0.8 1 1.2
Gain-Bandwidth Product

f

⎯

T

250

⎯

V

V

= -5V, IO = -100uA

CC

VO = -0.3V, IO = -20mA
I

= -10mA /-0.5mA

O/II

VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -5mA

= -10V, IE = -5mA,

V

CE

f = 100 MHz

V

VCC = 5V, IO = 100uA
VO = 0.3V, IO = 10mA
IO/II = 10mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V

⎯ ⎯

V

= 10V, IE = 5mA,

MHz

CE

f = 100 MHz

⎯

⎯

⎯

Typical Characteristics @T

= 25°C unless otherwise specified

A

250

200

(mW)

150

DISSI

100

D

50

0

-50

DS30761 Rev. 6 - 2

050100150

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Derating Curve (Total Device)

2 of 6

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DCX100NS

© Diodes Incorporated

C

O

C

TOR CUR

R

T

C CUR

RENT G

C

O

CTO

R

T

TER

PUT VO

TAG

Characteristics Curves of PNP Transistor (Q1) @T

AIN

FE

h, D

300

250

200

150

100

50

100

0.2

0.18

0.16

(A)

0.14

EN

0.12

0.1

0.08

LLE

0.06

C

0.04

I,

0.02
0

0

0.2 0.4 0.6 0.8

V

, COLLECTOR EMITTER VOLTAGE (V)

CE

1

1.2 1.4

1.6

1.8

2

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

100

I/I=10

cb

10

= 25°C unless otherwise specified

A

T = 150C

°

A

°

10

100 1,000

0

0.1

V = 5V

CE

T = 125C

A

T = 85C

°

A

1

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain vs. Collector Current

I/I=20

cb

10

1

T = 150 C

°

A

T = 125 C

°

0.1

SATURATION VOL TAGE (V)

CE(SAT)

V , COLLECTOR-EMITTER

0.01

0.1 1 10 100

A

T = 25C

T = 85C

A

I , COLLECTOR CURRENT (mA)

C

A

°

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

15

V = 0.3V

CE

12

E (V)

9

L

6

IN

3

T =-55°C

A

T = -55C

A

°

-EMI

1

T =150°C

A

LLE

T =125°C

A

T =-55°C

0.1

SATURATION VOLTAGE (V)

°

CE(SAT)

V,

T =85°C

A

A

T = 25°C

A

0.01

1,000

0.1

1

I , COLLECTOR CURRENT (mA)

C

10 100 1,000

Fig. 5 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

2

1.8

1.6

1.4

1.2
1

0.8

0.6

0.4

0.2

0

0.1

1100

I , COLLECTOR CURRENT (mA)

C

10

Fig. 6 Typical Input Voltage vs. Collector Current

DS30761 Rev. 6 - 2

3 of 6

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0

0.1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current

DCX100NS

© Diodes Incorporated

15

12

8

7

6

4

6

3

3

0

I , COLLECTOR CURRENT (mA)

C

1

Fig. 8 Typical Base-Em it t er Saturatio n Voltage

vs. Collect or Current

Characteristics Curves of NPN Transistor (Q2) @T

0.1

0.09

)
A

(

0.08

T
N

0.07

E
R
R
U

0.06

C

R

0.05

O
T
C
E

0.04

L

L
O

0.03

C

,

C

I

0.02

0.01
0

0 0.4 0.8 1.2 1.6 2

V , COLLECTOR-EMITTER VOLTAGE (V)

Fig. 10 Typical Collector Current vs. Collector-Emitter Voltage

CE

100

2

10

I , COLLECTOR CURRENT (mA)

C

Fig. 9 Typical Base-Emitter Saturation Voltage

vs. Collector Current

= 25°C unless otherwise specified

A

300

250

200

150

100

50

0

0.1

I , COLLECTOR CURRENT (mA)

C

10

Fig. 11 T yp ical DC Current Gain vs. Collector Current

100

I/I=20

cb

10

1

0.1

SATURA TION VOL TAGE (V)

CE(SAT)

V , COLLECTOR - EMITTE R

0.01

0.1 1 10

Fig. 12 Typical Collector-Emitter Saturation Voltage

DS30761 Rev. 6 - 2

T = 150C

°

A

T = 125C

°

A

T = 85C

°

A

T = 25C

°

A

T = -55C

°

A

I , COLLECTOR CURRENT (mA)

C

100

vs. Collector Current

1,000

4 of 6

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10

1

0.1

SATURATION VOLT AGE (V)

CE(SAT)

V , COLLECTOR-EMITTER

0.01

0.1 1 10 100 1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 13 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

DCX100NS

© Diodes Incorporated

25

25

V = 5V

CE

20

15

10

INPUT VOLTAGE (V)

5

0

0.1

110

I , COLLECTOR CURRENT (mA)

C

100

Fig. 14 Typical Input volt age vs. Outp ut Cu r r ent

30

I/I=10

cb

24

18

T = -55C

°

A

12

T = 25C

°

A

T = 85C

°

6

0

0.1

BE(SAT)

V , BASE-EMITTER SATURATION VOLT AGE (V)

I , COLLECTOR CURRENT (mA)

C

A

T = 125C

°

A

T = 150C

°

A

110

100

Fig. 16 Typical Base-Emitter Saturation Voltage

vs. Collector Current

20

15

T = 150C

A

T = 125C

°

A

°

10

T = 85C

°

A

5

T = -55C

A

BE(ON)

V , BASE-EMITTER TURN-ON VOLT AGE (V)

0

0.1

I , COLLECTOR CURRENT (mA)

C

110

°

T = 25C

°

A

100

Fig. 15 Typical Base-Emitter Turn-On Voltage vs. Collector Current

30

I/I = 20

cb

24

18

12

T = -55C

°

T = 25C

°

A

A

T = 85C

A

T = 150C

A

T = 125C

A

°

°

°

110

100

6

0

0.1

BE(SAT)

V , BASE-EMITTER SATURATION VOLTAGE (V)

I , COLLECTOR CURRENT (mA)

C

Fig. 17 Typical Base-Emitter Saturation Voltage

vs. Collector Current

Ordering Information (Note 4)

Device

DCX100NS-7

Notes: 4. For packaging details, please see page 6 or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Packaging Shipping

SOT-563 3000/Tape & Reel

Marking Information

C01 YM

C01 = Product Type Marking Code
YM = Date Code Marking
Y = Year e.g., T = 2006
M = Month e.g., 9 = September

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012

Code S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DS30761 Rev. 6 - 2

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DCX100NS

© Diodes Incorporated

Package Outline Dimensions

K

A

Dim Min Max Typ

B

C

D

G

M

H

L

SOT-563

A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

Suggested Pad Layout

G

Z

Y

X

C2

C2

C1

Dimensions Value (in mm)

Z 2.2

G 1.2

X 0.375

Y 0.5
C1 1.7
C2 0.5

DS30761 Rev. 6 - 2

6 of 6

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DCX100NS

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

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IMPORTANT NOTICE

LIFE SUPPORT

DS30761 Rev. 6 - 2

7 of 6

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DCX100NS

© Diodes Incorporated