Diodes DCP69 User Manual

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Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DCP68)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
SOT223
Top View
B
Device Schematic
DCP69/-16/-25
20V PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, "Green Molding” Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin
• Solderable per MIL-STD -202, Method 208
• Weight: 0.112 grams (approximate)
C
E
Top View
Pin Out Confi
uration
Ordering Information (Note 3)
Part Number
DCP69-13 P12 13 12 2500 DCP69-16-13 P12-16 13 12 2500 DCP69-25-13 P12-25 13 12 2500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Reel size (inches) Tape width (mm) Quantity per reel
Marking Information
W
W
Y
xxx
xxx = Product Type Marking Code P12 = DCP69 P12-16 = DCP69-16 P12-25 = DCP69-25
= Manufacturer’s code marking YWW = Date Code Marking Y = Last digit of year (ex: 1 = 2011) WW = Week code (01 – 53)
DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
1 of 5
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April 2012
© Diodes Incorporated
Page 2
θ
θ
)
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Current
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Operating and Storage Temperature Range
DCP69/-16/-25
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
R
JA
P
D
R
JA
T
, T
J
STG
-25 V
-20 V
-5.0 V
-1.0 A
-2.0 A
1 W
125 °C/W
2 W
62.5 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current Emitter-Base Cutoff Current
BV BV BV
I
CBO
I
EBO
CBO CEO EBO
-25 — — V
-20 — — V
-5.0 — — V — — — — -100 nA
-100
-10
IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0
nA
V
CB
μA
V
CB
VEB = -5.0V, IC = 0
= -25V, IE = 0 = -25V, IE = 0, TA = 150°C
ON CHARACTERISTICS (Note 6)
V
DCP69, DCP69-16, DCP69-25
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage
50 60
DCP69 85 — 375
h
FE
— —
— —
DCP69-16 100 — 250 DCP69-25 160 — 375
V
CE(sat
V
BE (on)
— — -0.5 V — —
-0.7
-1.0
—
V
= -10V, IC = -5.0mA
CE
V
= -1.0V, IC = -1.0A
CE
V
= -1.0V, IC = -500mA
CE
V
= -1.0V, IC = -500mA
CE
V
= -1.0V, IC = -500mA
CE
IC = -1.0A, IB = -100mA
= -10V, IC = -5.0mA
V
CE
= -1.0V, IC = -1.0A
V
CE
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product Output Capacitance
Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on in Diodes Inc. suggested pad layout document, which can be found on our website at
6. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
http://www.diodes.com
5. Device mounted on FR-4 PCB with 1in.
2
copper pad layout
f
T
C
obo
40 200 — MHz — 17 — pF
VCE = -5.0V, IC = -50mA, f = 100MHz VCB = -10V, f = 1 MHz
DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
2 of 5
www.diodes.com
April 2012
© Diodes Incorporated
Page 3
P, P
OWER
P
T
O
N
C
O
CTO
R CUR
REN
T
C CUR
RENT G
C
O
CTO
R
T
TER
T
T
R T
U
R
O
OLT
G
T
T
R
TURAT
O
N
O
T
G
DCP69/-16/-25
2.0
1.8
1.6
1.6
(A)
1.4
I = -10mA
B
(mW) I
1.2
A
DISSI
0.8
D
0.4
1.2
1.0
0.8
LLE
0.6
C
0.4
-I ,
I = -8mA
B
I = -6mA
B
I = -4mA
B
I = -2mA
B
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Power Dissipation vs. Ambient Temperature
350
300
T = 150°C
A
250
AIN
T = 85°C
A
V = -1V
CE
150
0
012345678910
-V , COLLECTOR EMITTER VOL TAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.6
0.5
-EMI
0.4
I/I = 10
CB
200
0.3
LLE
0.2
SATURATION VOLTAGE (V)
CE(SAT)
-V ,
0.1
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
150
FE
100
h, D
50
T = 25°C
A
T = -55°C
A
0
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Fig. 3 Typical DC Current Gain
vs. Collecto r Current (DCP69-16)
1.2 E (V) A
1.0
N V
0.8 N-
T = -55°C
A
0.6
T = 25°C
E
A
T = 85°C
A
0.4
T = 150°C
A
0.2
BE(ON)
0
-V , BASE- EMI
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
V = -1V
CE
vs. Collector Current
0
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
E (V) A
1.0
L V
0.8
I
T = -55°C
A
0.6
T = 25°C
A
SA
T = 85°C
A
E
0.4
T = 150°C
A
I/I = 10
0.2
0
0.001 0.01 0.1 1 10
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (A)
C
CB
Fig. 6 T y pical Base-Emitter Saturation Voltage
vs. Collector Current
DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
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April 2012
© Diodes Incorporated
Page 4
DCP69/-16/-25
60
f = 1MHz
250
200
40
150
100
20
CAPACITANCE (pF)
V = -5V
C
obo
0
0.01 0.1 1 10 100
Fig. 7 Typical Output Capacitance Characteristics
V , REVERSE VOLTAGE (V)
R
50
0
T
f , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
020406080100
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
-I , COLLECTOR CURRENT (mA)
C
CE
f = 100MHz
Package Outline Dimensions
A
A1
Suggested Pad Layout
Y1
Y2
X2
X1
C2
C1
Dim Min Max Typ
SOT223
A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50 E1 6.90 7.10 7.00
e — — 4.60 e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Dimensions Value (in mm)
X1 3.3 X2 1.2 Y1 1.6 Y2 1.6 C1 6.4 C2 2.3
DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
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April 2012
© Diodes Incorporated
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DCP69/-16/-25
DCP69/-16/-25
Document number: DS30798 Rev. 7 - 2
5 of 5
www.diodes.com
April 2012
© Diodes Incorporated
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