Diodes DCP68 User Manual
R
Please click here to visit our online spice models database.
Features
• Epitaxial Planar Die Construction
• Complementary
• Ideally
Suited for Automated Assembly Processes
• Ideal for Medium Pow
• Lead Free By
• "Green" Dev
PNP Type Available (DCP69)
er Switching or Amplification Applications
Design/RoHS Compliant (Note 1)
ice (Note 2)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL F
lammability Classification Rating 94V-0
• Moisture Sensitivity
• Terminals: Finish - Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams
: Level 1 per J-STD-020D
DCP68/-25
NPN SURFACE MOUNT TRANSISTOR
3
2
1
4
OT- 223
S
3
E
2
C
4
C
B
1
TOP VIEW
Schematic and Pin Configuration
COLLECTOR
BASE
1
EMITTE
2,4
3
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @ TA = 25ºC (Note 3) P
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
= 25°C unless otherwise specified
A
DCP68, DCP68-25
DCP68 85 — 375
DCP68-25
V
(BR)CES
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
V
CE(SAT)
V
BE (ON)
T
FE
f
T
V
CBO
V
CEO
V
EBO
I
C
D
R
JA
θ
, T
J
STG
25 V
20 V
5.0 V
1.0 A
1 W
125
-55 to 150
25 — — V
20 — — V
25 — — V
5.0 — — V
— — 100 nA
— — 10
50
60
—
—
—
—
μA
—
160 — 375
— — 0.5 V
— — 1.0 V
— 330 — MHz
°C/W
°C
I
= 100μA, IE = 0
C
I
= 1.0mA, IB = 0
C
I
= 10μA, IE = 0
C
I
= 10μA, IC = 0
E
V
= 25V, IE = 0
CB
= 5.0V, IC = 0
V
EB
V
= 10V, IC = 5.0mA
CE
= 1.0V, IC = 1.0A
V
CE
V
= 1.0V, IC = 500mA
CE
V
= 1.0V, IC = 500mA
CE
I
= 1.0A, IB = 100mA
C
V
= 1.0V, IC = 1.0A
CE
= 100mA, VCE = 5.0V
I
C
f = 100MHz
DS30797 Rev. 6 - 2
1 of 4
www.diodes.com
DCP68/-25
© Diodes Incorporated
C
O
CTO
R
C
URRENT
1.6
1.4
(A)
1.2
1.0
0.8
0.6
LLE
0.4
C
I,
0.2
NEW PRODUCT
0.0
0246
V , COLLECTOR EMITTER VOLTAGE (V)
CE
0.5
0.4
0.3
0.2
SATURATION VOLTAGE (V)
CE(SAT)
0.1
V , COLLECTOR EMITTER
0
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
81
0
BE(ON)
V , BASE EMITTER TURN-ON VOLT AGE (V)
I , COLLECTOR CURRENT (A)
C
DS30797 Rev. 6 - 2
2 of 4
www.diodes.com
BE(SAT)
V , BASE EMITTER SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
DCP68/-25
© Diodes Incorporated
Loading...