Diodes DC0150BDJ User Manual

θ

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Ultra Small Package

NEW PRODUCT

Maximum Ratings–Q1 NPN @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

Collector Current – Continuous
Base Current

COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT-963

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0027 grams (approximate)

SOT-963

Top View

= 25°C unless otherwise specified

A

6

Q1

Device Schematic

V

CBO

V

CEO

V

EBO

I

C

I

B

DC0150ADJ / DC0150BDJ

4

5

Q2

2

31

60 V
50 V

5 V

100 mA

30 mA

Maximum Ratings–Q2 PNP @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

Collector Current - Continuous
Base Current

= 25°C unless otherwise specified

A

V
V
V

CBO
CEO
EBO

I

C

I

B

-50 V

-50 V

-5 V

-100 mA

-30 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

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P

D

R

JA

, T

T

J

STG

300 mW
417 °C/W

-55 to +150 °C

April 2009

© Diodes Incorporated

)

)

C

O

CTO

R C

URR

T

Electrical Characteristics–Q1 NPN @T

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage
DC Current Gain DC0150ADJ

DC0150BDJ

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

Output Capactiance

NEW PRODUCT

Characteristic Symbol Min Typ Max Unit Test Condition

Electrical Characteristics–Q2 PNP @T

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage
DC Current Gain DC0150ADJ

DC0150BDJ

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

Output Capactiance

Notes: 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%

300

Characteristic Symbol Min Typ Max Unit Test Condition

= 25°C unless otherwise specified

A

60 — — V

BR)CBO
BR)CEO
BR)EBO

I

CBO

I

EBO

CE(SAT

h

FE

f

T

C

ob

BR)CBO
BR)CEO
BR)EBO

I

CBO

I

EBO

CE(SAT

h

FE

f

T

C

ob

50 — — V

5 — — V
— — 0.1
— — 0.1

— 0.10 0.25 V

120 — 240
200 — 400

60 — — MHz

— 1.3 — pF

-50 — — V

-50 — — V

-5 — — V
— — -0.1
— — -0.1

— -0.15 -0.3 V

120 — 240
200 — 400

80 — — MHz

— 1.6 — pF

V(
V(
V(

V

= 25°C unless otherwise specified

A

V(
V(
V(

V

1,000

DC0150ADJ / DC0150BDJ

IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0

μA
μA

—

μA
μA

—

= 60V, IE = 0

V

CB

= 5V, IC = 0

V

EB

IC = 100mA, IB = 10mA
VCE = 6V, IC = 2mA

V

= 10V, IE = -1mA

CE

f = 30MHz

= 10V, IE = 0,

V

CB

f = 1MHz

IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0

= -50V, IE = 0

V

CB

VEB = -5V, IC = 0

IC = -100mA, IB = -10mA
VCE = -6V, IC = -2mA

V

= -10V, IE = 1mA

CE

f = 30MHz
V

= -10V, IE = 0,

CB

f = 1MHz

250

(mA)

200

150

100

D

P , POWER DISSI PATION (W)

50

R = 417°C/W

θ

JA

0

25 50 75 100 125 150

0

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

EN

100

Pw = 100ms

LLE

10

C

-I ,

1

0.1 1 10 100

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

Pw = 10ms

DC

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

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April 2009

© Diodes Incorporated

C CUR

R

N

T

GAIN

C

O

CTOR-

T

TER

T

TER TURN-O

OLTAG

T

TER

TURATIO

OLTAG

CAPACITANC

p

F

G

T

H P

R

ODU

C

T

H

NEW PRODUCT

DC0150ADJ / DC0150BDJ

1,000

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

E

A

100

FE

h, D

10

0.1 10 100 1,000

1

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain

vs. Collector Current ( DC0150BD J- NPN)

1.2

E (V)

I = 10

/I

CB

1.0

V = 6V

CE

1

I/I = 10

CB

EMI

VOLTAGE (V)

0.1

LLE

SATURATION

CE(SAT)

V,

T = 150°C

A

T = 85°C

A

T = 25°C

T = -55°C

A

0.01

0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current (DC0150BDJ-NPN)

1.2

E (V)

V = 6V

1.0

A

CE

N V

0.8

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

A

0.2

BE(ON)

0

V , BASE-EMI

0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collect or Current ( DC0150BDJ-NPN)

100

f = 1MHz

N V

0.8

T = -55°C

A

SA

0.6

T = 25°C

A

T = 85°C

A

0.4

T = 150°C

A

0.2

0.0001 0.001 0.01 0.1 1

BE(SAT)

V , BASE-EMI

I , COLLECTOR CURRENT (A)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current (DC0150BDJ - NPN)

320

z)

280

(M

240

)

E (

10

C

ibo

200

160

120

1

C

obo

80

AIN-BANDWID

40

V = 6V

0

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capaci t ance Characteristics

(DC0150BDJ - NPN)

T

f,

CE

f = 30MHz

0

02 4 6810

I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Gain-Bandwidth Product

vs. Collector Current (DC0150BDJ - NPN)

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

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April 2009

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C CUR

REN

T GAIN

C

O

CTO

R

T

TER

T

TER TUR

N-O

N VOLTAG

T

TER

TURATIO

N VOLTAG

C

P

C

T

N

C

F

G

T

H

P

R

ODU

C

T

H

NEW PRODUCT

DC0150ADJ / DC0150BDJ

1,000

T = 150°C

A

100

FE

h, D

10

T = 85°C

A

T = 25°C

A

T = -55°C

A

V = -6V

CE

0.1 1 10 100 1,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 9 Typical DC Current Gain

vs. Collector Current (DC0510BDJ - PNP)

1.2

E (V)

1.0

V = -6V

CE

1

I/I = 10

CB

-EMI

T = 150°C

VOLTAGE (V)

0.1

LLE

SATURATION

CE(SAT)

-V ,

0.01

0.0001 0.001 0.01 0.1 1
Fig. 10 Typical Collector-Emitter Saturation Voltage

-I , COLLECTOR CURRENT (A)

C

A

T = 85°C

A

T = 25°C

T = -55°C

A

A

vs. Collector Current (DC0510BDJ - PNP)

1.2

E (V)

I = 10

/I

1.0

CB

0.8

T = -55°C

A

0.6

T = 25°C

A

T = 85°C

A

0.4

T = 150°C

A

0.2

BE(ON)

0

-V , BASE-EMI

0.0001 0.001 0.01 0.1 1

-I , COLLECTOR CURRENT (A)

C

Fig. 11 Typical Base-Emitter Turn-On Vo ltage

vs. Collector Current (DC0510BDJ - PNP)

100

f = 1MHz

)

10

E (p
A

I

C

ibo

A
A

1

C

obo

0.8

T = -55°C

A

SA

0.6

T = 25°C

A

T = 85°C

A

0.4

T = 150°C

A

0.2

0.0001 0.001 0.01 0.1 1

BE(SAT)

-V , BASE-EMI

-I , COLLECTOR CURRENT (A)

C

Fig. 12 Typical Base-Emitter Saturation Voltage

vs. Collector Current (DC0150BDJ - PNP)

250

z)

200

(M

150

100

V = -6V

CE

50

f = 30MHz

0

02 4 6810

-I , COLLECTOR CURRENT (mA)

C

Fig. 14 Typical Gain-Bandwidt h Produc t

vs. Collector Current ( DC0 510B DJ - PNP)

0

0.1 1 10 100
V , REVERSE VOLT AGE (V)

R

Fig. 13 Typical Capacitance Characteristics

(DC0150BDJ - PNP)

AIN-BANDWID

T

f,

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

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© Diodes Incorporated

DC0150ADJ / DC0150BDJ

Ordering Information (Note 5)

Device Packaging Shipping

DC0150ADJ-7 SOT-963 10,000/Tape & Reel
DC0150BDJ-7 SOT-963 10,000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

NEW PRODUCT

xx

xx= Product Type Marking Code:
T1 = DC0150ADJ
T2 = DC0150BDJ

Package Outline Dimensions

E1

A1

D
e1

L

Dim Min Max Typ

E

e

b (5 places)

A

c

SOT-963

A 0.40 0.50 0.45

A1 0 0.05 -

c 0.077 0.177 0.127
D 0.95 1.05 1.00
E 0.95 1.05 1.00

E1 0.75 0.85 0.80

L 0.05 0.15 0.10
b 0.10 0.20 0.15
e 0.35 Typ

e1 0.70 Typ

All Dimensions in mm

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

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April 2009

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DC0150ADJ / DC0150BDJ

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

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© Diodes Incorporated