Diodes DC0150BDJ User Manual

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Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Ultra Small Package

NEW PRODUCT

Maximum Ratings–Q1 NPN @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

Collector Current – Continuous
Base Current

COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR

Mechanical Data

• Case: SOT-963

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0027 grams (approximate)

SOT-963

Top View

= 25°C unless otherwise specified

A

6

Q1

Device Schematic

V

CBO

V

CEO

V

EBO

I

C

I

B

DC0150ADJ / DC0150BDJ

4

5

Q2

2

31

60 V
50 V

5 V

100 mA

30 mA

Maximum Ratings–Q2 PNP @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

Collector Current - Continuous
Base Current

= 25°C unless otherwise specified

A

V
V
V

CBO
CEO
EBO

I

C

I

B

-50 V

-50 V

-5 V

-100 mA

-30 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

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P

D

R

JA

, T

T

J

STG

300 mW
417 °C/W

-55 to +150 °C

April 2009

© Diodes Incorporated

)

)

C

O

CTO

R C

URR

T

Electrical Characteristics–Q1 NPN @T

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage
DC Current Gain DC0150ADJ

DC0150BDJ

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

Output Capactiance

NEW PRODUCT

Characteristic Symbol Min Typ Max Unit Test Condition

Electrical Characteristics–Q2 PNP @T

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage
DC Current Gain DC0150ADJ

DC0150BDJ

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

Output Capactiance

Notes: 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%

300

Characteristic Symbol Min Typ Max Unit Test Condition

= 25°C unless otherwise specified

A

60 — — V

BR)CBO
BR)CEO
BR)EBO

I

CBO

I

EBO

CE(SAT

h

FE

f

T

C

ob

BR)CBO
BR)CEO
BR)EBO

I

CBO

I

EBO

CE(SAT

h

FE

f

T

C

ob

50 — — V

5 — — V
— — 0.1
— — 0.1

— 0.10 0.25 V

120 — 240
200 — 400

60 — — MHz

— 1.3 — pF

-50 — — V

-50 — — V

-5 — — V
— — -0.1
— — -0.1

— -0.15 -0.3 V

120 — 240
200 — 400

80 — — MHz

— 1.6 — pF

V(
V(
V(

V

= 25°C unless otherwise specified

A

V(
V(
V(

V

1,000

DC0150ADJ / DC0150BDJ

IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0

μA
μA

—

μA
μA

—

= 60V, IE = 0

V

CB

= 5V, IC = 0

V

EB

IC = 100mA, IB = 10mA
VCE = 6V, IC = 2mA

V

= 10V, IE = -1mA

CE

f = 30MHz

= 10V, IE = 0,

V

CB

f = 1MHz

IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0

= -50V, IE = 0

V

CB

VEB = -5V, IC = 0

IC = -100mA, IB = -10mA
VCE = -6V, IC = -2mA

V

= -10V, IE = 1mA

CE

f = 30MHz
V

= -10V, IE = 0,

CB

f = 1MHz

250

(mA)

200

150

100

D

P , POWER DISSI PATION (W)

50

R = 417°C/W

θ

JA

0

25 50 75 100 125 150

0

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

EN

100

Pw = 100ms

LLE

10

C

-I ,

1

0.1 1 10 100

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage (Note 3)

Pw = 10ms

DC

DC0150ADJ / DC0150BDJ

Document number: DS31480 Rev. 3 - 2

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www.diodes.com

April 2009

© Diodes Incorporated