LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
Features
• Provides ESD Protection per IEC 61000-4-2 Standard:
Air ±30kV, Contact ±30kV
• 1 Channel of ESD Protection
• Low Channel Input Capacitance
• Typically Used in Cellular Handsets, Portable Electronics,
Communication Systems, Computers and Peripherals
• Lead Free/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
NEW PRODUCT
X1-DFN1006-2
Bottom View
Mechanical Data
• Case: X1-DFN1006-2
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208
• Weight: 0.001 grams (approximate)
Pin 1 Pin 2
Device Schematic
Ordering Information (Note 3)
Voltage Capaci tance # of Chann els Polarity # of Pins Package Packing
5V0: 5.0 Volts
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
X: Extremely Low (< 0.5pF)
F: Ultra Low (0.5 ~ 1.0pF)
P: Very Low (1.1 ~ 10pF)
L: Low (10. 1 ~ 20pF)
M: Medium (>20pF)
Part Number Case Packaging
D5V0L1B2LP-7B X1-DFN1006-2 10,000/Tape & Reel
D 5V0 L X B X XXX- XX
1: 1 Channel
2: 2 Channels
4: 4 Channels
6: 6 Channels
B: Bidirect ional
(Symmetrical)
U: Unidirecti onal
A: Bidirect ional
(Asymmetrical)
2: 2 Pins
3: 3 Pins
5: 5 Pins
6: 6 Pins
8: 8 Pins
10: 10 Pins
LP3: X3-D FN0603-2
LP: X1-DFN1006-2
LP4: X2-D FN1006-2
T: SOD 523/SOT52 3
SO: SOT23/SO T2 5
W: SOD123/SOT 323
TS: TSOT25/TSOT26
S: SOT353/SOT363
V:SOT553/SOT563
Marking Information
D5V0L1B2LP
Document number: DS35427 Rev. 9 - 2
H
H = Product Type Marking Code
Line Denotes Pin 1
1 of 4
www.diodes.com
WS: SOD323
D5V0L1B2LP
7: 7” reel (3K/reel)
7B: 7” reel (10Kreel)
13: 13” re el
January 2012
© Diodes Incorporated
D5V0L1B2LP
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
P
I
PP
V
ESD_Contac
V
ESD_Ai
PP
84 W 8/20μs, per Fig. 1
6 A 8/20μs, per Fig. 1
±30 kV IEC 61000-4-2 Standard
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
NEW PRODUCT
Operating and Storage Temperature Range
P
D
R
JA
, T
T
J
STG
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
Channel Leakage Current (Note 5)
Clamping Voltage, Positive Transients
V
RWM
I
RM
V
CL
- - 5 V -
- 10 100 nA
-
7.0 9.0
- 8.7 10.7
- 10.5 12.0
- 11.5 14.0
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Notes: 4. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
V
BR
R
DIF
C
IN
6 7 8 V
-
0.2 -
- 15 20 pF
18
250 mW
500
-65 to +150
V
= 5V
RWM
I
= 1A, tp = 8/20μS
PP
I
= 3A, tp = 8/20μS
PP
V
I
= 5A, tp = 8/20μS
PP
I
= 6A, tp = 8/20μS
PP
IR = 1mA
Ω
I
= 1A, tp = 8/20μS
R
VR = 0V, f = 1MHz
°C/W
°C
17
f = 1 MHz
100
16
E (pF)
15
I
A
14
50
PppP
I , PEAK PULSE CURRENT (%I )
0
0
20 40
t, TIME ( s)
μ
60
Fig. 1 Pulse Waveform
A
13
AL
12
T
11
10
0123 456
Fig. 2 Typic al Total Capacitance vs. Reverse Vo l tage
V , REVERSE VOLTAGE (V)
R
D5V0L1B2LP
Document number: DS35427 Rev. 9 - 2
2 of 4
www.diodes.com
January 2012
© Diodes Incorporated