Diodes D5V0F4U10LP User Manual
Features
IEC 61000-4-2 (ESD): Air – ±15kV, Contact – ±8kV
4 Channels of ESD Protection
Low Channel Input Capacitance of 0.5pF Typical
Typically Used at High Speed Ports such as USB 2.0, USB 3.0,
IEEE1394, Serial ATA, DVI, HDMI, PCI
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Pin# Description
1, 2, 4, 5 Input
6, 7, 9, 10 No Connection
3, 8 Ground
Pin Description (Top View)
10 9 8 7 6
12345
D5V0F4U10LP
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Mechanical Data
Case: U-DFN2510-10
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe (Lead Free Plating).
Solderable per MIL-STD-202, Method 208
Weight: 0.039 grams (approximate)
Pin 1 Pin 2
Device Schematic
Pin 4
3,8
e4
Pin 5
Ordering Information (Note 4)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
D5V0F4U10LP-7 Standard TF2 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TF2 YM
D5V0F4U10LP
Document number: DS35456 Rev. 3 - 2
TF2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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July 2013
© Diodes Incorporated
P, P
O
R D
PATIO
N
P
P
U
R
T
G
O
D5V0F4U10LP
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
I
PP
V
ESD_Contact
V
ESD_Air
3.0 A
±8 kV
±15 kV
8/20µs, Figure 3
Standard IEC 61000-4-2
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient TA = +25°C
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage
Reverse Current (Note 6)
Reverse Breakdown Voltage
Reverse Clamping Voltage, Positive Transients
(Note 7)
Dynamic Resistance
Capacitance (Note 8)
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
8. Measured from any I/O pin to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
V
R
RWM
I
V
V
DYN
C
R
BR
CL
T
400
360
Note 5
320
(mW)
280
240
200
ISSI
160
WE
120
D
80
— — 5.5 V —
— — 200 nA
6.0 — — V
— 10 12 V
— 1.0 — Ω
— 0.4 0.65 pF
— 0.5 — pF
) waveform.
pp
100
F
75
%
IN
A
50
LSE DE
25
EAK
PEAK POWER OR CURRENT
380 mW
327 °C/W
-55 to +150 °C
VR = 5.5V
IR = 1mA
IPP = 1A, tp = 8/20μs
IR = 1A, tp = 8/20μs
= 2.5V, f = 1MHz
V
R
= 0V, f = 1MHz
V
R
40
0
0125175
25 10050 75 150
T , AMBIENT TEMPERATURE ( C)
A
°
Figure 1 Power Derating Curve
D5V0F4U10LP
Document number: DS35456 Rev. 3 - 2
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0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
Figure 2 Pu ls e D er ating Curv e
150
175 200
July 2013
© Diodes Incorporated
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