Product Summary
V
I
BR (min
6V 1.5A 0.5pF
C
PP (max
Description
This new generation TVS is designed to protect sensitive electronics
from the damage due to ESD. The combination of small size and high
ESD surge capability makes it ideal for use in portable applications
such as cellular phones, digital cameras, and MP3 players.
Applications
• Cellular Handsets
• Portable Electronics
• Computers and Peripheral
ADVANCE INFORMATION
Pin # Description
1, 2 Input
5, 6 No Connection
3, 4 Ground
Pin Description (Top View)
T(t
D5V0F2U6LP
2 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Features
• Low Profile Package (0.61mm max) and Ultra-small PCB
Footprint Area (1.68 * 1.08mm max) Suitable for Compact
Portable Electronics
• Provides ESD Protection per IEC 61000-4-2 Standard:
Air ±15kV, Contact ±15kV
• 1 Channel of ESD Protection
• Low Channel Input Capacitance
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: U-DFN1610-6
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208
• Weight: 0.003 grams (approximate)
CH 1 CH 2
e4
V
N
Device Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D5V0F2U6LP-7 Standard TG6 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2014 2013 2014 2015 2016 2017 2018
Code B C D E F G H
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
D5V0F2U6LP
Document number: DS36672 Rev. 1 - 2
TG6
YM
www.diodes.com
TG6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
1 of 4
April 2014
© Diodes Incorporated
D5V0F2U6LP
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
I
PP
V
ESD_Contac
V
ESD_Ai
1.5 A
±15 kV
±15 kV
8/20µs (Note 7)
Standard IEC 61000-4-2
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient TA = +25°C R
Operating and Storage Temperature Range
P
D
θJA
T
, T
J
STG
ADVANCE INFORMATION
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Reverse breakdown voltage
Clamping Voltage, Positive Transients (Note 7)
V
RWM
I
V
V
R
BR
C
— — 5.5 V —
— — 100 nA
6.0 — — V
— 10 12 V
— 0.5 —
Channel Input Capacitance (Note 8)
C
T
— 0.4 0.65
Dynamic Resistance
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
8. Measured from any I/O to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL:
http://www.diodes.com/destools/appnote_dnote.html.
R
DYN
400
350
Note 5
— 0.9 — Ω
) waveform.
pp
100
300 mW
417
-55 to +150
VR = 5V, Any I/O to GND
IR = 1mA
IPP = 1A, tp = 8/20μs
= 0V, f = 1MHz, Any I/O to
V
R
GND
pF
= 2.5V, f = 1MHz, Any I/O to
V
R
GND
IPP = 1A, tp = 8/20μs
°C/W
°C
(mW)
I
A
300
250
200
75
%
I
50
DISSI
150
100
D
LSE DE
EAK
PEAK POWER OR CURRENT
25
50
0
0
25
50 75
T , AMBIENT TEMPERATURE ( C)
A
125 175
100
150
°
Figure 1 Power Derating Curve
D5V0F2U6LP
Document number: DS36672 Rev. 1 - 2
2 of 4
www.diodes.com
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75 100 125
Figure 2 Pulse Derating Curve
150
175 200
April 2014
© Diodes Incorporated