Diodes D58V0M4U8MR User Manual

A

Features

 2.7kW Peak Pulse Power (tp = 8x20µs)

 Provides ESD Protection per IEC 61000-4-2 Standard:

Air ±30kV, Contact ±30kV

 4 Channels of ESD Protection and 4 Decoupling Capacitances

 Typically Used in Power Over Ethernet PSE Equipment against

Line Overvoltages

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

NEW PRODUCT

SO-8

PS1

GND

GND

PS2

Top View

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound. UL

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Copper leadframe

 Weight: 0.08 grams (approximate)

Top View

Pin Configuration

Flammability Classification Rating 94V-0

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

D58V0M4U8MR

58V UNIDIRECTIONAL TVS DIODE ARRAY

PS4

GND

GND

PS3

Device Schematic

Ordering Information (Note 4)

ADVANCED INFORMATION

D58V0 M X B X XXX- XX

Voltage Capacitance # of Channels Polarity # of Pins Package Packing

5V0: 5.0 Volts

58V0: 58.0 Volts

D58V0M4U8MR-13 Standard TV58 13 12 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

X: Extremely Low (<0.5pF)

F: Ultra Low (0.5 ~ 1.0pF)

P: Very Low (1.1 ~ 10pF)

L: Low (10.1 ~ 20pF)

M: Medium (>20pF)

Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

1: 1 Channel
2: 2 Channels
4: 4 Channels
6: 6 Channels

B: Bidirectional

(Symmetrical)

U: Unidirectional

: Bidirectional

(Asymmetrical)

2: 2 Pins
3: 3 Pins
5: 5 Pins
6: 6 Pins
8: 8 Pins

10: 10 Pins

LP3: X3-DFN0603-2

LP: X1-DFN1006-2

LP4: X2-DFN1006-2

WS: SOD323

T: SOD523/SOT523

SO: SOT23/SOT25

W: SOD123/SOT323

TS: TSOT25/TSOT26

S: SOT353/SOT363

V:SOT553/SOT563

7: 7” reel

7B: 7” reel

13: 13” reel

(DFN1006
Package Only)

Marking Information

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

Top View

8 5

TV58

WW

YY

1 4

www.diodes.com

1 of 5

Logo

Part Marking

Xth week: 01 ~ 53

Year: “13” = 2013

April 2014

© Diodes Incorporated

P(T INIT

C

P(T

NIT

= 2

5

Maximum Ratings (@T

= +25°C, unless otherwise specified.), Per Element

A

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

Peak Pulse Current

ESD Protection – Contact Discharge

ESD Protection – Air Discharge

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

ADVANCED INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

P

PP

I

PP

V

ESD_Contact

V

ESD_Air

D58V0M4U8MR

2700 W 8/20µs, Per Figure 1

24 A 8/20µs, Per Figure 1

±30 kV IEC 61000-4-2 Standard

±30 kV IEC 61000-4-2 Standard

P

D

R

θJA

T

, T

J

STG

1.0 W

125 °C/W

-65 to +150 °C

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Standoff Voltage

Channel Leakage Current (Note 6)

Breakdown Voltage

Clamping Voltage

Channel Input Capacitance

Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

V

RWM

I

RM

V

V

C

BR

CL

T

— — 58 V —

— — 0.2 μA

64.4 — 71.2 V

— — 100 V

— 55 — pF

V

= 58V

RWM

IR = 1mA

IPP = 24A, tp = 8/20μS

VR = 50V, f = 1MHz

110

100

)

100

Peak Value I

pp

90

80

IAL

70

I

60

50

40

IAL)/ °

50

Half Value I /2

pp

30

PppP

I , PEAK PULSE CURRENT (%I )

8x20 Waveform

0

0

as defined by R.E.A.

20 40

t, TIME ( s)



Figure 1 Pulse Waveform

60

20

PP J PP J

10

0

0 25 50 75 100 125 150 175

T (°C)

J

Figure 2 Peak Power Dissipation vs.

Initial

Junction Temperature

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

2 of 5

www.diodes.com

April 2014

© Diodes Incorporated