Diodes D58V0M4U8MR User Manual

A

Features

 2.7kW Peak Pulse Power (tp = 8x20µs)

 Provides ESD Protection per IEC 61000-4-2 Standard:

Air ±30kV, Contact ±30kV

 4 Channels of ESD Protection and 4 Decoupling Capacitances

 Typically Used in Power Over Ethernet PSE Equipment against

Line Overvoltages

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

NEW PRODUCT

SO-8

PS1

GND

GND

PS2

Top View

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound. UL

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Copper leadframe

 Weight: 0.08 grams (approximate)

Top View

Pin Configuration

Flammability Classification Rating 94V-0

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

D58V0M4U8MR

58V UNIDIRECTIONAL TVS DIODE ARRAY

PS4

GND

GND

PS3

Device Schematic

Ordering Information (Note 4)

ADVANCED INFORMATION

D58V0 M X B X XXX- XX

Voltage Capacitance # of Channels Polarity # of Pins Package Packing

5V0: 5.0 Volts

58V0: 58.0 Volts

D58V0M4U8MR-13 Standard TV58 13 12 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

X: Extremely Low (<0.5pF)

F: Ultra Low (0.5 ~ 1.0pF)

P: Very Low (1.1 ~ 10pF)

L: Low (10.1 ~ 20pF)

M: Medium (>20pF)

Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

1: 1 Channel
2: 2 Channels
4: 4 Channels
6: 6 Channels

B: Bidirectional

(Symmetrical)

U: Unidirectional

: Bidirectional

(Asymmetrical)

2: 2 Pins
3: 3 Pins
5: 5 Pins
6: 6 Pins
8: 8 Pins

10: 10 Pins

LP3: X3-DFN0603-2

LP: X1-DFN1006-2

LP4: X2-DFN1006-2

WS: SOD323

T: SOD523/SOT523

SO: SOT23/SOT25

W: SOD123/SOT323

TS: TSOT25/TSOT26

S: SOT353/SOT363

V:SOT553/SOT563

7: 7” reel

7B: 7” reel

13: 13” reel

(DFN1006
Package Only)

Marking Information

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

Top View

8 5

TV58

WW

YY

1 4

www.diodes.com

1 of 5

Logo

Part Marking

Xth week: 01 ~ 53

Year: “13” = 2013

April 2014

© Diodes Incorporated

P(T INIT

C

P(T

NIT

= 2

5

Maximum Ratings (@T

= +25°C, unless otherwise specified.), Per Element

A

Characteristic Symbol Value Unit Conditions

Peak Pulse Power Dissipation

Peak Pulse Current

ESD Protection – Contact Discharge

ESD Protection – Air Discharge

Thermal Characteristics

Characteristic Symbol Value Unit

Package Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

ADVANCED INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

P

PP

I

PP

V

ESD_Contact

V

ESD_Air

D58V0M4U8MR

2700 W 8/20µs, Per Figure 1

24 A 8/20µs, Per Figure 1

±30 kV IEC 61000-4-2 Standard

±30 kV IEC 61000-4-2 Standard

P

D

R

θJA

T

, T

J

STG

1.0 W

125 °C/W

-65 to +150 °C

Characteristic Symbol Min Typ Max Unit Test Conditions

Reverse Standoff Voltage

Channel Leakage Current (Note 6)

Breakdown Voltage

Clamping Voltage

Channel Input Capacitance

Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

V

RWM

I

RM

V

V

C

BR

CL

T

— — 58 V —

— — 0.2 μA

64.4 — 71.2 V

— — 100 V

— 55 — pF

V

= 58V

RWM

IR = 1mA

IPP = 24A, tp = 8/20μS

VR = 50V, f = 1MHz

110

100

)

100

Peak Value I

pp

90

80

IAL

70

I

60

50

40

IAL)/ °

50

Half Value I /2

pp

30

PppP

I , PEAK PULSE CURRENT (%I )

8x20 Waveform

0

0

as defined by R.E.A.

20 40

t, TIME ( s)



Figure 1 Pulse Waveform

60

20

PP J PP J

10

0

0 25 50 75 100 125 150 175

T (°C)

J

Figure 2 Peak Power Dissipation vs.

Initial

Junction Temperature

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

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April 2014

© Diodes Incorporated

P

k

C

F

R

100.0

T Initial = 25°C

J

10.0

W)
(

PP

1.0

0.1

NEW PRODUCT

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
tp (mS)

Figure 3 Peak Pulse Power vs. Exponential Pulse Duration

(T Initial = 25°C)

J

1000

f = 1MHz
V = 30mV

OSC RMS

T = 25°C

J

ADVANCED INFORMATION

D58V0M4U8MR

100.0

10.0

PP

I (A)

1.0

T Initial = 25°C

J

8/20µs

0.1
70 80 90 100

Figure 4 Clamping Voltage vs. Peak Pulse Current

(Exponential Waveform, Maximum Values)

1.0E+01

V (V)

CL

)

100

(p

T

10

40 45 50 55

V (V)

R

Figure 5 Capacitance vs. Voltage (typical values)

1

th(j-a)

0.1

Zth(j-a)/

1.0E+00

FM

I (A)

1.0E-01

T = 25°C

J

T = 125°C

J

1.0E-02
0 0.5 1 1.5

Figure 6 Peak Forward Voltage Drop vs.

Peak Forward Current (typical values)

V (V)

FM

1.E+04

V = V

RRWM

1.E+03

1.E+02

1.E+01

R

I (nA)

1.E+00

1.E-01

0.01

1.0E-03 1.0E-01 1.0E+01 1.0E+03
t (s)

P

Figure 7 Relative Variation of Thermal Impedance

Junction Ambient vs. Pulse Duration

1.E-02
25 50 75 100 125 150

T (°C)

J

Figure 8 Leakage Current vs. Junction Temperature

(typical values)

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

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April 2014

© Diodes Incorporated

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

NEW PRODUCT

E1

E

A1

Detail ‘A’

h

°

45

A2

A3

A

e

b

D

0.254
Gauge Plane

L

Seating Plane

7°~9

°

Detail ‘A’

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

ADVANCED INFORMATION

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

X

Dimensions Value (in mm)

X 0.60

C1

C2

Y

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Y 1.55
C1 5.4
C2 1.27

D58V0M4U8MR

Dim Min Max

SO-8

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5
D 4.85 4.95
E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0 8



All Dimensions in mm

April 2014

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

NEW PRODUCT

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCED INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

D58V0M4U8MR

D58V0M4U8MR

Document number: DS36183 Rev. 2 - 2

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