Diodes CTA2P1N User Manual

Features

• Combines MMBT4403 type transistor with 2N7002 type
MOSFET

• Small Surface Mount Package

• NPN/P-Channel Complement Available: CTA2N1P

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

NEW P PRODODUCT T R UC

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).

• Terminal Connections: See Diagram

• Marking Information: A80, See Page 5

• Ordering Information: See Page 5

• Weight: 0.006 grams (approximate)

CTA2P1NCTA2P1N

COMPLEX TRANSISTOR ARRAY

A

H

K

J

C

Q1

Q1

E

Q1

D

G

S

Q2

Q2

Q2

B

D

Q1

Q2

SOT-363

Dim Min Max

A 0.10 0.30

B C

B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J

⎯

0.10

K 0.90 1.00

M

L 0.25 0.40
M 0.10 0.25

L

F

α

All Dimens ons in mm i

0° 8°

Maximum Ratings, Total Device @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 2)

Thermal Resistance, Junction to Ambient (Note 2)

Operating and Storage Temperature Range

R

Tj, T

Pd

θ

JA

STG

150 mW

833

-55 to +150

Maximum Ratings, Q1, MMBT4403 PNP Transistor Element @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

V

V

V

CBO

CEO

EBO

IC

-40 V

-40 V

-5.0 V

-600 mA

Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage

Drain-Gate Voltage R

≤ 1.0MΩ V

GS

Gate-Source Voltage Continuous
Pulsed

V

DSS

DGR

V

GSS

Drain Current (Note 2) Continuous
Continuous @ 100°C

ID

Pulsed

Notes: 1. No purposefully added lead.

2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

60 V

60 V

±20
±40

115

73

800

DS30296 Rev. 9 - 2

1 of 5

www.diodes.com

°C/W

°C

V

mA

CTA2P1N

© Diodes Incorporated

Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element

@TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON CHARACTERISTICS (Note 5)

DC Current Gain

NEW PRODUCT

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Admittance

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

IBL

hFE

V

CE(SAT)

V

BE(SAT)

Ccb

Ceb

hie

hre

hfe

hoe

fT

td

tr

ts

tf

-40

-40

-5.0

⎯

⎯

-100 nA

-100 nA

30

60
100
100

20

⎯

-0.75
⎯

-0.40

-0.75

-0.95

-1.30

⎯

⎯

1.5 15

0.1 8.0 x 10-4

60 500

1.0 100

200

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯
⎯
⎯

300

⎯

8.5 pF

30 pF

⎯

15 ns

20 ns

225 ns

30 ns

V

IC = -100μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -100μA, IC = 0

V

= -35V, V

CE

V

CE

= -35V, V

EB(OFF)

EB(OFF)

IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V

⎯

IC = -150mA, V
IC = -500mA, VCE = -2.0V

IC = -150mA, IB = -15mA

V

IC = -500mA, IB = -50mA

IC = -150mA, IB = -15mA

V

IC = -500mA, IB = -50mA

VCB = -10V, f = 1.0MHz, IE = 0

VEB = -0.5V, f = 1.0MHz, IC = 0

kΩ

V

= -10V, IC = -1.0mA,

CE

f = 1.0kHz

⎯

μS

VCE = -10V, IC = -20mA,

MHz

f = 100MHz

VCC = -30V, IC = -150mA,
V

= -2.0V, IB1 = -15mA

BE(off)

VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA

= -1.0V

CE

= -2.0V

CE

= -0.4V

= -0.4V

Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element

@TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C

Gate-Body Leakage

BV

I

I

DSS

GSS

60 70

DSS

⎯ ⎯

⎯ ⎯

V

⎯

1.0
µA

500

±10 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance @ Tj = 25°C
@ Tj = 125°C

On-State Drain Current

Forward Transconductance

V

GS(th)

R

DS (ON)

I

D(ON)

gFS

1.0

⎯

3.2

⎯

4.4

0.5 1.0

80

⎯ ⎯

2.0 V

7.5

13.5

⎯

Ω

A

mS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

22 50 pF

⎯

11 25 pF

⎯

2.0 5.0 pF

⎯

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

DS30296 Rev. 9 - 2

www.diodes.com

t

D(ON)

t

D(OFF)

2 of 5

⎯

⎯

7.0 20 ns

11 20 ns

VGS = 0V, ID = 10μA

VDS = 60V, VGS = 0V

VGS = ±20V, VDS = 0V

VDS = VGS, ID =-250μA

VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

VGS = 10V, VDS = 7.5V

VDS =10V, ID = 0.2A

VDS = 25V, VGS = 0V
f = 1.0MHz

VDD = 30V, ID = 0.2A,
RL = 150Ω, V

GEN

= 10V, R

© Diodes Incorporated

= 25Ω

GEN

CTA2P1N