Page 1
Features
• Combines MMBT4403 type transistor with 2N7002 type
MOSFET
• Small Surface Mount Package
• NPN/P-Channel Complement Available: CTA2N1P
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
NEW P PRODODUCT T R UC
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: A80, See Page 5
• Ordering Information: See Page 5
• Weight: 0.006 grams (approximate)
CTA2P1NCTA2P1N
COMPLEX TRANSISTOR ARRAY
A
H
K
J
C
Q1
Q1
E
Q1
D
G
S
Q2
Q2
Q2
B
D
Q1
Q2
SOT-363
Dim Min Max
A 0.10 0.30
B C
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
⎯
0.10
K 0.90 1.00
M
L 0.25 0.40
M 0.10 0.25
L
F
α
All Dimens ons in mm i
0° 8°
Maximum Ratings, Total Device @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
R
Tj, T
Pd
θ
JA
STG
150 mW
833
-55 to +150
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
V
V
V
CBO
CEO
EBO
IC
-40 V
-40 V
-5.0 V
-600 mA
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage R
≤ 1.0MΩ V
GS
Gate-Source Voltage Continuous
Pulsed
V
DSS
DGR
V
GSS
Drain Current (Note 2) Continuous
Continuous @ 100°C
ID
Pulsed
Notes: 1. No purposefully added lead.
2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
60 V
60 V
±20
±40
115
73
800
DS30296 Rev. 9 - 2
1 of 5
www.diodes.com
°C/W
°C
V
mA
CTA2P1N
© Diodes Incorporated
Page 2
Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
IBL
hFE
V
CE(SAT)
V
BE(SAT)
Ccb
Ceb
hie
hre
hfe
hoe
fT
td
tr
ts
tf
-40
-40
-5.0
⎯
⎯
-100 nA
-100 nA
30
60
100
100
20
⎯
-0.75
⎯
-0.40
-0.75
-0.95
-1.30
⎯
⎯
1.5 15
0.1 8.0 x 10-4
60 500
1.0 100
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
300
⎯
8.5 pF
30 pF
⎯
15 ns
20 ns
225 ns
30 ns
V
IC = -100μA, IE = 0
V
IC = -1.0mA, IB = 0
V
IE = -100μA, IC = 0
V
= -35V, V
CE
V
CE
= -35V, V
EB(OFF)
EB(OFF)
IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
⎯
IC = -150mA, V
IC = -500mA, VCE = -2.0V
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
VCB = -10V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
kΩ
V
= -10V, IC = -1.0mA,
CE
f = 1.0kHz
⎯
μS
VCE = -10V, IC = -20mA,
MHz
f = 100MHz
VCC = -30V, IC = -150mA,
V
= -2.0V, IB1 = -15mA
BE(off)
VCC = -30V, IC = -150mA,
IB1 = IB2 = -15mA
= -1.0V
CE
= -2.0V
CE
= -0.4V
= -0.4V
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C
Gate-Body Leakage
BV
I
I
DSS
GSS
60 70
DSS
⎯ ⎯
⎯ ⎯
V
⎯
1.0
µA
500
±10 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj = 25°C
@ Tj = 125°C
On-State Drain Current
Forward Transconductance
V
GS(th)
R
DS (ON)
I
D(ON)
gFS
1.0
⎯
3.2
⎯
4.4
0.5 1.0
80
⎯ ⎯
2.0 V
7.5
13.5
⎯
Ω
A
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
22 50 pF
⎯
11 25 pF
⎯
2.0 5.0 pF
⎯
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
DS30296 Rev. 9 - 2
www.diodes.com
t
D(ON)
t
D(OFF)
2 of 5
⎯
⎯
7.0 20 ns
11 20 ns
VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID =-250μA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VDS = 25V, VGS = 0V
f = 1.0MHz
VDD = 30V, ID = 0.2A,
RL = 150Ω, V
GEN
= 10V, R
© Diodes Incorporated
= 25Ω
GEN
CTA2P1N
Page 3
CAPACITAN
C
p
F
C
O
CTO
R
T
T
R VOLTAG
C
O
CTO
R T
O
T
TER
T
TER VOLTAG
C C
URR
N
T
G
N
GAIN
N
D
D
T
H
P
RODUC
T
M
H
NEW PRODUCT
MMBT4403 Section
30
20
)
10
E (
5
1
-0.1
-1.0
-10
-30
REVERSE VOLTAGE (V)
Fig. 1 Typical Capacitance
0.5
I
C
= 10
I
B
0.4
EMI
0.3
T = 25°C
A
1.6
1.4
E (V)
1.2
1.0
E
0.8
-EMI
0.6
0.4
LLE
0.2
CE
V,
0
0.001 0.01
1.0
0.9
E (V)
0.8
0.7
I = 10mA
C
I = 1mA
C
I , BASE CURRENT (mA)
B
I = 100mA
C
I = 30mA
C
0.1
I = 300mA
1
C
10 100
Fig. 2 Typical Collector Saturation Region
V = 5V
CE
T = -50°C
A
T = 25°C
A
0.2
LLE
SATURATION VOLTAGE (V)
0.1
CE(SAT)
V,
0
110
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Collector Emitter Saturation Voltage
1,000
V = 5V
CE
T = 25°C
AI
100
A
E
10
FE
h, D
T = 150°C
A
100
vs. Collector Current
T = 150°C
A
T = -50°C
A
T = 50°C
A
1,000
0.6
0.5
T = 150°C
A
0.4
BE(ON)
V , BASE EMI
0.3
0.2
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Base-Emitter Voltage
vs. Collector Current
1,000
z)
(
100
WI
10
BA
T
f,
1
1
10
I , COLLECTOR CURRENT (mA)
C
100
Fig. 5 DC Current Gain vs. Collector Current
1,000
1
1
I , COLLECTOR CURRENT (mA)
C
10 100
Fig. 6 Gain Bandwidth Product vs. Collector Current
DS30296 Rev. 9 - 2
3 of 5
www.diodes.com
CTA2P1N
© Diodes Incorporated
Page 4
P, P
OWER
PATIO
D
RAIN-SOUR
CE CUR
REN
T
MMBT4403 Section (Continued)
200
150
N (mW)
100
DISSI
50
D
NEW PRODUCT
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Max Power Dissipation vs.
Ambient Temperature (Total Device)
1.0
V = 10V
GS
9.0V
8.0V
7.0V
0.8
(A)
0.6
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
0.4
0.2
D
I,
0
012
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 8 On-Region Characteristics (2N7002)
3.0
75
100 125
3
150
200
175
2N7002 Section
5.5V
5.0V
4
5
7
6
5
V = 5.0V
GS
4
3
V = 10V
GS
2
1
0
00.2
0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
Fig. 9 On-Resistance vs. Drain Current (2N7002)
6
T = 25 Cj°
5
2.5
2.0
4
I = 50mA
D
3
I = 500mA
D
2
1.5
V = 10V,
GS
I = 200mA
D
1.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERATURE ( C)
j
Fig. 10 On-Resistance vs. Junction Temperature (2N7002)
DS30296 Rev. 9 - 2
°
4 of 5
www.diodes.com
1
0
024681012141618
V , GATE TO SOURCE VOLTAGE (V)
GS
Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002)
© Diodes Incorporated
CTA2P1N
Page 5
GAT
OUR
C
O
T
G
A
A
2N7002 Section
10
9
8
E (V)
7
A
L
6
E V
5
4
E S
3
2
GS,
V
1
NEW PRODUCT
0
0 0.2 0.4 0.6 0.8
Fig. 12 Typical Transfer Characteristics (2N7002)
I , DRAIN CURRENT (A)
D
1
Ordering Information (Note 6)
Device
CTA2P1N-7-F SOT-363 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
(Continued)
Marking Information
Date Code Key
Year 2004 2005 2006 2007 2008 2009 2010 2011 2012
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Code R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
80
YM
IMPORTANT NOTICE
80 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
LIFE SUPPORT
DS30296 Rev. 9 - 2
5 of 5
www.diodes.com
CTA2P1N
© Diodes Incorporated
Loading...