Diodes CTA2N1P User Manual

NEW PRODUCT

Features

• Combines MMBT4401 type transistor with BSS84 type
MOSFET

• Small Surface Mount Package

• PNP/N-Channel Complement Available: CTA2P1N

• Lead Free/RoHS Compliant (Note 2)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Marking Information: A03, See Page 6

• Ordering Information: See Page 6

• Weight: 0.006 grams (approximate)

CTA2N1P

COMPLEX TRANSISTOR ARRAY

A

A03

H

K

J

Q1

CQ1G

E

Q1

D

Q2

B

Q1

SOT-363

Dim Min Max

A 0.10 0.30

C

B

B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20

M

J

⎯

0.10

K 0.90 1.00

L

F

S

Q2

Q2

D

Q2

L 0.25 0.40
M 0.10 0.25
α

All Dimensions in mm

0°

8°

Maximum Ratings, Total Device @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range

R

Tj, T

Pd

θ

JA
STG

Maximum Ratings, Q1, MMBT4401 NPN Transistor Element @T

150 mW
833

-55 to +150

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous

V
V
V

CBO
CEO
EBO

IC

Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element @T

60 V
40 V

6.0 V

600 mA

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Drain-Gate Voltage R

≤ 1.0MΩ V

GS

Gate-Source Voltage Continuous
Drain Current Continuous

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

V

V

DSS
DGR
GSS

ID

-50 V

-50 V

±20 V

-130 mA

DS30295 Rev. 7 - 2 1 of 6

www.diodes.com

°C/W

°C

CTA2N1P

© Diodes Incorporated

NEW PRODUCT

Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element @T

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance

Current Gain-Bandwidth Product

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

IBL

hFE

V

CE(SAT)

V

BE(SAT)

Ccb
Ceb

hie

hre

hfe

hoe

fT

td
tr
ts
tf

60
40

6.0

⎯
⎯

20
40
80

100

40

⎯

0.75

0.40

0.75

0.95

⎯

⎯
⎯

1.0 15

0.1 8.0 x 10-4
40 500

1.0 30

250

⎯
⎯
⎯
⎯

⎯
⎯
⎯

V
V

V
100 nA
100 nA

⎯
⎯
⎯

⎯

300

⎯

V

1.2

V

6.5 pF
30 pF

kΩ

⎯
μS

⎯

MHz

15 ns
20 ns

225 ns

30 ns

= 25°C unless otherwise specified

A

IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
V

= 35V, V

CE

V

= 35V, V

CE

IC = 100µA, V

EB(OFF)
EB(OFF)

= 1.0V

CE

= 0.4V
= 0.4V

IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, V

CE

= 1.0V

IC = 500mA, VCE = 2.0V
IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0

V

= 10V, IC = 1.0mA,

CE

f = 1.0kHz

VCE = 10V, IC = 20mA,
f = 100MHz

VCC = 30V, IC = 150mA,
V

= 2.0V, IB1 = 15mA

BE(off)

VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA

Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

I

GSS

DSS

DSS

-50

⎯
⎯
⎯

⎯ ⎯

⎯ ⎯
⎯

-15

-60

⎯

-100

⎯

±10

V

µA
µA

nA
nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

GS(th)

R

DS (ON)

gFS

-0.8
⎯ ⎯

.05

-2.0 V

⎯

10

⎯ ⎯

Ω

S

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

C

oss

C

⎯ ⎯

iss

⎯ ⎯
⎯ ⎯

rss

45 pF
25 pF
12 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

t

D(ON)

t

D(OFF)

⎯
⎯

10
18

⎯
⎯

ns
ns

DS30295 Rev. 7 - 2 2 of 6

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= 25°C unless otherwise specified

A

VGS = 0V, ID = -250µA
V

= -50V, VGS = 0V, TJ = 25°C

DS

V

= -50V, VGS = 0V, TJ = 125°C

DS

V

= -25V, VGS = 0V, TJ = 25°C

DS

VGS = ±20V, V

DS

= 0V

VDS = VGS, ID = -1mA
VGS = -5V, ID = 0.100A
V

= -25V, ID = 0.1A

DS

VDS = -25V, V

GS

= 0V

f = 1.0MHz

V

= -30V, ID = -0.27A,

DD

R

= 50Ω, V

GEN

GS

= -10V

CTA2N1P

© Diodes Incorporated