Diodes BSS84W User Manual

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P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

(BR)DSS

-50V

10Ω V

DS(ON)

= -5V

TA = +25°C

-130mA

Description

This MOSFET has been designed to minimize the on-state resistance (R making it ideal for high efficiency power management applications.

) and yet maintain superior switching performance,

DS(ON)

Applications

 General Purpose Interfacing Switch  Power Management Functions  Analog Switch

SOT323

Top View

Gate

Equivalent Circuit

Ordering Information (Note 4 & 5)

BSS84W

Features

 Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323  Case Material: Molded Plastic, "Green" Molding Compound, UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020C  Terminal Connections: See Diagram  Terminals: Solderable per MIL-STD-202, Method 208  Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Weight: 0.006 grams (approximate)

Drain

Source

Top View

Part Number Compliance Case Packaging

BSS84W-7-F Standard SOT323 3000 / Tape & Reel

BSS84WQ-7-F Automotive SOT323 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

BSS84W

Document number: DS30205 Rev. 15 - 2

K84

Shanghai A/T Site

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K84 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Drain-Gate Voltage (Note 6) Gate-Source Voltage Continuous Drain Current (Note 6) Continuous Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

V V V

IDM

TJ, T

DSS DGR GSS

θJA

STG

BSS84W

-50 V

20

-130 mA

-1 A

200 mW 625 °C/W

-55 to +150 °C

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

DSS

GSS

DSS

-50 -75

  

 

  



-1

-2

-100 10

VGS = 0V, ID = -250µA

µA

= -50V, VGS = 0V, TJ = +25°C

µA

= -50V, VGS = 0V, TJ = +125°C

= -25V, VGS = 0V, TJ = +25°C

VGS = 20V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance

DS(ON)

GS(th)

gFS

-0.8 -1.6 -2.0 V 

0.05

6 10 Ω

 

VDS = VGS, ID = -1mA VGS = -5V, ID = -0.1A

= -25V, ID = -0.1A

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Reverse Transfer Capacitance

     

iss

oss

rss

45 pF 25 pF 12 pF

VDS = -25V, V

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time Turn-Off Delay Time

Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

7. Short duration pulse test used to minimize self-heating effect.

BSS84W

Document number: DS30205 Rev. 15 - 2

D(ON)

D(OFF)

www.diodes.com

 

2 of 5

10 18

 

ns ns

= -30V, ID = -0.27A,

= 50Ω, V

GEN

= -10V

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P, P

OWER

PATIO

R, O

RAIN-SOUR

CE C

URR

CUR

RENT

250

200

(mW)

150

DISSI

100

50 75

T , AMBIENT TEMPERATURE (°C)

100 125

Fig. 1 Max Power Dissipation vs. Ambient Temperature

-1.0

150

175

200

-600

T = 25C

-500

(mA) E

-400

-300

-4.5V

-3.5V

-200

-100

-2-1 -5

V , DRAIN SOURCE (V)

-3

Fig. 2 Drain Source Current vs.Drain Source Voltage

V = -5V

-3.0V

-2.5V

-4

BSS84W

(A)

AIN

I, D



-0.8

-0.6

-0.4

-0.2

-0.0

T= -55C

T= 125C

-2 -3

-1

V , GATE-TO-SOURCE VOLTAGE (V)

-5

-4

Fig. 3 Drain Current vs. Gate Source Voltage

V = -10V

I = -0.13A

T= 25C

8 7



5 4 3

ON-RESISTANCE ( )

T = 125 C

DS(ON)

R , NORMALIZED DRAIN-SOURCE

-8-7-6

-1 V , GATE-SOURCE (V)

-2

T= 25C

-3

-4 -5

Fig. 4 On-R esistan ce vs. Gate- S ource Voltag e

25.0

20.0



E ( ) A

ESIS

15.0

10.0

V = -3V

V = -4V

V= -3.5V

V = -4.5V

V = -5V

V = -6V

DS(ON)

R , ON-RESISTANCE ( )

-50

-25 T , JUNCTION TEMPERATURE (°C)

75 150

100

125

Fig. 5 On-Resistance vs. Junction Temperature

BSS84W

Document number: DS30205 Rev. 15 - 2

www.diodes.com

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DS(ON)

5.0

0.0

-0.0

-0.2 -0.4 I , DRAIN-CURRENT (A)

V = -8V

V = -10V

-0.6 -0.8 1.0

Fig. 6 On- R esi s tance vs . D r ai n- C urrent

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

G H

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0

Dim Min Max Typ

A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D - - 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 0.95 L 0.25 0.40 0.30 M 0.10 0.18 0.11



SOT323

0° 8° -

All Dimensions in mm

BSS84W

Document number: DS30205 Rev. 15 - 2

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September 2013

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

BSS84W

Document number: DS30205 Rev. 15 - 2

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September 2013