Diodes BSS84V User Manual

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

V

(BR)DSS

-50V

R

10 @ V

DS(on) max

= -5V

GS

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch

NEW PRODUCT

 Power Management Functions

 Analog Switch

SOT563

TOP VIEW

I

D

TA = 25°C

-130mA

BSS84V

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT563

 Case Material: Molded Plastic, "Green" Molding

Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020C

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

D

2

S

2

TOP VIEW

Internal Schematic

S

G

1

1

D

G

1

2

e3

Ordering Information (Note 4)

Part Number Case Packaging

BSS84V-7 SOT563 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012

Code S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

BSS84V

Document number: DS30605 Rev. 9 - 2

K84 YM

K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September

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February 2013

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



)

)

)

)

BSS84V

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Drain-Gate Voltage (Note 5)
Gate-Source Voltage Continuous
Drain Current (Note 6) Continuous

V

DSS

V

DGR

V

GSS

ID

-50 V

-50 V

20

V

-130 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation
Thermal Resistance, Junction to Ambient

NEW PRODUCT

Operating and Storage Temperature Range

R

Tj, T

PD

θJA

STG

150 mW
833

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-50 -75













 



-1

-2

-100

50

V

VGS = 0V, ID = -250µA

µA

V

= -50V, VGS = 0V, TJ = +25C

DS

µA

V

= -50V, VGS = 0V, TJ = +125C

DS

nA

V

= -25V, VGS = 0V, TJ = +25C

DS

nA

VGS = 20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

R

DS (ON

GS(th

gFS

-0.8 -1.6 -2.0 V


0.05

2 10

 

VDS = VGS, ID = -1mA



VGS = -5V, ID = -0.100A

S

V

= -25V, ID = -0.1A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

iss

oss

rss

 
 
 

C

C

C

45 pF
25 pF
12 pF

VDS = -25V, V

= 0V, f = 1.0MHz

GS

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time

Notes: 5. RGS  20K.

6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

7. Short duration pulse test used to minimize self-heating effect.

t

D(ON

t

D(OFF





10
18




ns
ns

V

= -30V, ID = -0.27A,

DD

R

= 50, V

GEN

GS

= -10V

BSS84V

Document number: DS30605 Rev. 9 - 2

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P, P

O

R

PATIO

RAIN

CUR

REN

T

RAIN CUR

REN

T

R

R

RAIN C

U

R

R

N

T

NEW PRODUCT

BSS84V

250

200

150

N (mW)

(A)

-1.4

-1.2

-1.0

125

-0.8

100

DISSI

75

WE

50

D

25

0

25 50

0

T , AMBIENT TEMPERATURE (°C)

A

75

100

125

150

Fig. 1 Max Power Dissipation vs. Ambient Temperat ure

-1

175

-0.6

-0.4

D

I, D

-0.2

0

0 -0.5 -1 -1.5 -2.5-2-3 -3.5 -4 -4.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 Typical Output Characteristics

3.0

-5

V= -10V

(A)

-0.1

DS

-0.01

D

I, D

-0.001
0-1 -2-3-4-5

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 3 Typical Transfer Characteristics

8

7

6



5

4

2.5



2.0

1.5

1.0

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

0.5

0

-0.001 -0.1

Fig. 4 Static Drain-Source On- Resistance

-0.01

I , DRAIN CURRENT (A)

D

vs. Drain Current

-1

-1

(A)

E

-0.1

3

ON-RESISTANCE ( )

2

DS(ON)

R , STATIC DRAIN-SOURCE

1

0

0

-2

V , GATE-SOURCE VOLTAGE (V)

GS

-4

-8-6

-10

Fig. 5 Static Drain-Source On-Resistance vs.

Gate-Source Voltage

BSS84V

Document number: DS30605 Rev. 9 - 2

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SE D

-0.01

EVE

DR

I,

-0.001
0

V , BODY DIODE FORWARD VOLTAGE (V)

SD

-0.5

-1.0

Fig. 6 Reverse Drain Current vs.

Body Diode Forward Voltage

-1.5

February 2013

© Diodes Incorporated

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

B

C

M

L

NEW PRODUCT

K

D

G

H

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

BSS84V

Document number: DS30605 Rev. 9 - 2

G

Z

Y

X

C2

C2

C1

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Dim Min Max Typ

Dimensions Value (in mm)

Z 2.2
G 1.2
X 0.375
Y 0.5

C1
C2

SOT563

A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50

G 0.90 1.10 1.00

H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20

M 0.10 0.18 0.11

All Dimensions in mm

1.7

0.5

BSS84V

February 2013

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.

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NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

BSS84V

BSS84V

Document number: DS30605 Rev. 9 - 2

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