Diodes BSP75G User Manual

BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch

Summary

Continuous drain source voltage VDS=60V

On-state resistance 550m

Nominal load current 1.4A (V

Clamping energy 550mJ

⍀

= 5V)

IN

Description

Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level power MOSFET intended as a general purpose switch.

Features

• Short circuit protection with auto restart

• Over-voltage protection (active clamp)

• Thermal shutdown with auto restart

• Over-current protection

• Input protection (ESD)

• High continuous current rating

Note:

The tab is connected to the drain pin, and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance.

SOT223

S

D

IN

• Load dump protection (actively protects load)

• Logic level input

Ordering information

Device Reel size

(inches)

BSP75GTA 7 12mm embossed 1,000

BSP75GTC 13 12mm embossed 4,000

Tape width

(mm)

Quantity per reel

Device marking

BSP75G

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Functional block diagram

Over voltage

protection

BSP75G

D

IN

Human body

ESD protection

Over current

protection

Over temperature

protection

Logic

dV/dt

limitation

S

Applications

• Especially suited for loads with a high in-rush current such as lamps and motors.

• All types of resistive, inductive and capacitive loads in switching applications.

•

␮C compatible power switch for 12V and 24V DC applications.

• Automotive rated.

• Replaces electromechanical relays and discrete circuits.

• Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry.

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BSP75G

Absolute maximum ratings

Parameter Symbol Limit Unit

Continuous drain-source voltage V

Drain-source voltage for short circuit protection V

DS(SC)

Continuous input voltage V

Peak input voltage V

Operating temperature range T

Storage temperature range T

Power dissipation at T

=25°C

A

Continuous drain current @ V

Pulsed drain current @ V

Continuous source current (body diode)

(a)

=10V; TA=25°C

IN

=5V; TA=25°C

IN

=10V I

IN

(a)

Pulsed source current (body diode) I

Unclamped single pulse inductive energy E

Load dump protection V

LoadDump

Electrostatic discharge (human body model) V

DS

60 V

36 V

IN

, -40 to +150 °C

j

stg

P

D

I

D

I

D

DM

I

S

AS

-0.2 ... +10 V

-0.2 ... +20 V

-55 to +150 °C

2.5 W

1.6 A

1.4 A

5A

3A

5A

550 mJ

80 V

ESD

4000 V

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 40/150/56

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

NOTES:

(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight

copper.

(b) For a device surface mounted on FR4 board and measured at t<=10s. (c) For a device mounted on FR4 board with the minimum copper required for electrical connections.

(a)

(b)

(c)

R

⍜JA

50 °C/W

24 °C/W

208 °C/W

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Characteristics

BSP75G

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BSP75G

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter Symbol Min. Typ. Max. Unit Conditions

Static characteristics

Drain-source clamp voltage V

Off-state drain current I

Input threshold voltage

(*)

Input current I

Static drain-source on-state

DS(AZ)

DSS

V

IN(th)

R

DS(on)

IN

resistance Static drain-source on-state

R

DS(on)

resistance

Current limit

(†)

I

D(LIM)

I

D(LIM)

Dynamic characteristics

Turn-on time (V

Turn-off time (V

Slew rate on (70 to 50% V

Slew rate off (50 to 70% V

Protection functions

Required input voltage for

to 90% ID)t

IN

to 90% ID)t

IN

)

DD

)dVDS/dt

DD

(‡)

on

off

-dVDS/dt

V

PROT

over temperature protection Thermal overload trip

T

JT

temperature Thermal hysteresis 10 °C

Unclamped single pulse

E

AS

inductive energy Tj=25°C Unclamped single pulse

E

AS

inductive energy Tj=150°C

Inverse diode

Source drain voltage V

NOTES:

(*) Protection features may operate outside spec for V (†) The drain current is limited to a reduced value when V (‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.

SD

60 70 75 V ID=10mA

0.1 3 ␮A V 315␮A V

=12V, VIN=0V

DS

=32V, VIN=0V

DS

12.1 VVDS=VGS, ID=1mA

0.7 1.2 mA VIN=+5V

1.5 2.7 mA VIN=+7V

47mAVIN=+10V

520 675 m⍀ V

385 550 m⍀ V

=+5V, ID=0.7A

IN

=+10V, ID=0.7A

IN

0.7 1.1 1.75 A VIN=+5V, VDS>5V

234AVIN=+10V, VDS>5V

2.2 10 ␮sRL=22⍀, VDD=12V,

V

=0 to +10V

IN

13 20 ␮sRL=22⍀, VDD=12V,

=+10V to 0V

V

IN

on

off

10 20 V/␮sRL=22⍀, VDD=12V,

=0 to +10V

V

IN

3.2 10 V/␮s R

=22⍀, VDD=12V,

L

=+10V to 0V

V

IN

4.5 V

150 175 °C

550 mJ I

200 mJ I

D(ISO)

1VIN=0V, -ID=1.4A

<4.5V.

IN

exceeds a safe level.

DS

=0.7A, VDD=32V

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Characteristics

BSP75G

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BSP75G

Intentionally left blank

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Package outline - SOT223

BSP75G

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC

A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC

b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287

b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146

C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -

D 6.30 6.70 0.248 0.264 - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Europe

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Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected]

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Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA

Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected]

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Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected]

Corporate Headquarters

Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom

Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected]

These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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