Diodes BFS17N User Manual

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NPN RF TRANSISTOR IN SOT23

Features

• 3.2GHz unity gain for RF switching applications

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Mechanical Data

• Case: SOT23

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

e3

Applications

• RF switch

NEW PRODUCT

SOT23

Top View

B

Device symbol

C

E

C

E

Top View

Pin Out

B

BFS17N

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

BFS17NTA AEC-Q101 E1N 7 8 3,000

BFS17NQTA Automotive E1N 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com.

Marking Information

BFS17N

Document Number DS32160 Rev. 3 - 2

E1N

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E1N = Product type Marking Code

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BFS17N

Maximum Ratings (@T

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current

Thermal Characteristics (@T

Power Dissipation

Thermal Resistance, Junction to Ambient

NEW PRODUCT

Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

V

CBO

V

CEO

V

EBO

I

C

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

(Note 6) (Note 7) 350 (Note 6) (Note 7) 357

R R

T

J,TSTG

P

θJA

θJL

D

20 V 11 V

3 V

50 mA

310

403

350

-55 to +150

ESD Ratings (Note 9)

Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2 Electrostatic Discharge - Machine Model ESD MM 100 V A

Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition ;

7. Same as Note 6, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB

8. Thermal resistance from junction to solder-point (at the end of the leads).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Characteristic Symbol Value Unit JEDEC Class

mW

°C/W °C/W

°C

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Thermal Characteristics and Derating information

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BFS17N

NEW PRODUCT

0.4

0.3

0.2

0.1

0.0 0 255075100125150

Max Power D i ssi pa tion (W)

Temperature (°C)

Derat ing C urv e

10

Single Pulse. T

1

amb

=25°C

400 350 300 250

D=0.5

200 150

D=0.2

100

50

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

Transient Thermal Impedance

0.1

10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

Pulse Power Dissipation

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Document Number DS32160 Rev. 3 - 2

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BFS17N

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Static Forward Current Transfer Ratio (Note 10) Collector-Emitter Saturation Voltage (Note 10)

Transition Frequency (Note 10) Collector Output Capacitance (Note 10)

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

NEW PRODUCT

BFS17N

Document Number DS32160 Rev. 3 - 2

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat

f

T

C

−

ob

www.diodes.com

20 11

3

− −

56

− −

1.4 3.2

4 of 7

− −

0.5 µA

180

−

0.5 V

−

0.8 1.5 pF

V V V

−

GHz

IC = 10µA IC = 1mA IE = 10µA V

= 10V

CB

V

= 2V

EB

IC = 5mA, V

CE

= 10V

IC = 25mA, IB = 5mA

= 25mA, V

I

E

CE

= 5V,

f = 500MHz V

= 10V, f = 1MHz

CB

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BFS17N

Typical Electrical Characteristics (@T

200

150

100

hFE Gain

50

0

0.1 1 10 100

T=150°C

T=85°C

T=25°C

T=-55°C

IC Collector Curren t (mA)

NEW PRODUCT

1100 1000

900

T=25°C

T=-55°C

800

(V)

700

BE(ON)

600

V

500 400

0.1 1 10 100

T=150°C

IC Collector Current (mA)

= +25°C, unless otherwise specified.)

A

VCE=5V

0.06

0.05

0.04

0.03

0.02

0.01

Collector Current (A)

C

I

0.00

1.6

1.5

1.4

1.3

1.2

1.1

T=85°C

VCE=5V

Capacitance (pF)

1.0

EB

C

0.9

Ten base steps 100μA per step

012345678910

VCE (V)

Ta=25°C f=1MHz

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VEB Emitter-Bas e Vo l ta g e (V)

4

VCE=10V

1.4

3

Ta=25°C f=1MHz

1.2

2

fT (GHz)

1

Tamb=25°C f=500MHz

0

0.0 5.0 10.0 15.0 20.0 25.0 30.0

VCE=1V

IC Collector Current (mA)

BFS17N

Document Number DS32160 Rev. 3 - 2

VCE=5V

VCE=2V

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1.0

0.8

Capacitance (pF)

CB

C

0.6 0 5 10 15 20

VCB Collector-Base Voltage (V)

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

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C

B

K1

D

L

M

NEW PRODUCT

K

J

H

F

G

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

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Z

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Dim Min Max Typ

A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55 M 0.085 0.18 0.11

α

Dimensions Value (in mm)

SOT23

0° 8° -

All Dimensions in mm

Z 2.9 X 0.8 Y 0.9 C E

2.0

1.35

BFS17N

Document Number DS32160 Rev. 3 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

NEW PRODUCT

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the

final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

Diodes Incorporated

BFS17N

Document Number DS32160 Rev. 3 - 2

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