Diodes BC847PN User Manual

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Page 1

COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363

Features

 Epitaxial Die Construction

 Two Internally Isolated NPN/PNP Transistors in One Package

 Ideal for Medium Power Amplification and Switching

 Ultra-Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. "Green" Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

SOT363

Top View

BC847PN

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin Finish. Solderable per

MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

Device Schematic

Top View

Ordering Information (Note 4 & 5)

Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel

BC847PN-7-F AEC-Q101 K7P 7 8 3,000

BC847PN-13-F AEC-Q101 K7P 13 8 10,000 BC847PN-7R-F AEC-Q101 K7P 7 8 3,000 BC847PNQ-7-F Automotive K7P 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

2010

2011 2012 2013 2014 2015

K7P

BC847PN

Document number: DS30278 Rev. 13 - 2

K7P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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2016 2017

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

OWER

PATIO

Absolute Maximum Ratings: NPN, BC847B Type (Q1) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current

V V V

CBO

CEO

EBO

IC ICM IEM

Absolute Maximum Ratings: PNP, BC857B Type (Q2) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current

V V V

CBO

CEO

EBO

IC ICM IEM

BC847PN

= +25°C unless otherwise specified.)

50 V 45 V

6 V 100 mA 200 mA 200 mA

= +25°C unless otherwise specified.)

-50 V

-45 V

-6 V

-100 mA

-200 mA

Thermal Characteristics – Total Device (@T

= +25°C unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation (Note 6) Total Device Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range

Note: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured

under still air conditions whilst operating in a steady-state.

TJ, T

STG

200 mW 625 °C/W

-65 to +150 °C

Thermal Characteristics – Total Device

250

200

N (mW)

150

DISSI

100

0 40 80 120 160 200

T , AMBIENT TEMPERATURE ( C)

Fig. 1, Power Derating Curve (Total Device)

BC847PN

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C CURRENT

CTO

R-EM

H P

ODUCT

Electrical Characteristics: NPN, BC847B Type (Q1) (@T

= +25°C unless otherwise specified.)

Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Collector-Cutoff Current

Gain Bandwidth Product

Collector-Base Capacitance

BV BV BV

hFE

CE(sat)

BE(sat)

BE(on)

CBO

CEO

EBO

CBO

50 — — V 45 — — V

6 — — V

200 290 450 —

—

580

—

— —

200

700 900

660

—

— —

100 300 — MHz

— 3.5 6.0 pF

250 600

— mV

700 720

5.0

Noise Figure NF — 2.0 10 dB

Note: 7. Short duration pulse test used to minimize self-heating effect.

1,000

100

0.5

I = 20

0.4

ITTE

0.3

IC = 100µA, IB = 0 IC = 10mA, IB = 0 IE = 100µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V

nA µA

VCB = 30V, TA = +150°C VCE = 5.0V, IC = 10mA,

f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA,

RG = 2.0kΩf = 1.0kHz, f = 200Hz

BC847PN

FE,

h D

I , COLLECTOR CURRENT (mA)

1.0 10 1000.10.01

Figure 2. Typical D C Current Gain vs. Collector Current

(BC847B Type)

f = 1MHz

ibo

CAPACITANCE (pF)

obo

V , REVERSE VOLTAGE (V)

Figure 4. Typical Capacitance Characteristics (BC847B Type)

0.2

LLE

SATURATION VOLTAGE (V)

0.1

0.1 1.0 10 100

Figure 3. Typical Collector-Emitter Saturation Voltage

1,000

T = 25CA°

I , COLLECTOR CURRENT (mA)

vs. Collector Current (BC847B Type)

T = 100CA°

T = 25 CA°

T = -50CA°

V = 10V

V =CE5V

V = CE2V

100

AIN-BANDWID

0.1 1.0 10 100 I , COLLECTOR CURRENT (mA)

Figure 5. Typical Gain-Bandwidth Product

vs. Collector Current (BC847B Type)

BC847PN

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ECTOR-EMITTE

PAC

PRO

T (M

Electrical Characteristics: PNP, BC857B Type (Q2) (@T

= +25°C unless otherwise specified.)

Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Collector-Cutoff Current

Gain Bandwidth Product

Collector-Base Capacitance

BV BV BV

hFE

CE(sat)

BE(sat)

BE(on)

CBO

CEO

EBO

CBO

-50 — — V

-45 — — V

-6 — — V

220 290 475 —

—

-600 — -650 — -750

— —

-75

-250

-700

-850 — -950

— —

100 200 — MHz

— 3 4.5 pF

-300

-650

-820

-15

-4.0

Noise Figure NF — — 10 dB

Note: 8. Short duration pulse test used to minimize self-heating effect.

-1,000

-0.5

= 10

-0.4

IC = -100µA, IB = 0 IC = -10mA, IB = 0 IE = -100µA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V

nA µA

VCB = -30V, TA = +150°C VCE = -5.0V, IC = -10mA,

f = 100MHz VCB = -10V, f = 1.0MHz VCE = -5V, IC = -200µA,

RG = 2.0kΩf = 1.0kHz, f = 200Hz

BC847PN

-100

-10

h , DC CURRENT GAIN

-1

-1 -10 -100 I , COLLECTOR CURRENT (mA)

Figure 6. Typical DC Current Gain vs. Collector Current

(BC857B Type)

f = 1MHz

E (pF)

ITA

Cibo

Cobo

-1,000

-0.3

T = 25°C

-0.2

OLL

SATURATION VOLTAGE (V)

-0.1

CE(SAT)

T = 150°C

-1-0.1 -10 -100

I , COLLECTOR CURRENT (mA)

Figure 7. Typical Collector-Emitter Saturation Voltage

vs. Collector Current (BC857B Type)

-1,000

Hz)

-100

NDWID

IN-B

T = -50°C

-1,000

-10

-1

V , REVERSE VOLTAGE (V)

Figure 8. Typical Capacitance Characteri stics (BC857B Type)

BC847PN

Document number: DS30278 Rev. 13 - 2

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I , COLLECTOR CURRENT (mA)

Figure 9. Typical Gain-Bandwidth Product

vs. Collector Current (BC857B Type)

-10

-100

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Page 5

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

B C

Dim Min Max Typ

A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ

F 0.40 0.45 0.425

H 1.80 2.20 2.15

J 0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.22 0.11

0° 8° -



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6 C1 1.9 C2 0.65

BC847PN

SOT363

BC847PN

Document number: DS30278 Rev. 13 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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BC847PN

Document number: DS30278 Rev. 13 - 2

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