Features
• Fast Switching Speed
• Low Profile DFN Package (0.575mm typical thickness) is Much
Thinner than Conventional SOT Style Packages
• Thermally Efficient DFN Package Features 500mW Power
Dissipation Capability in a Compact 2.0 * 2.0mm Footprint
• Two “BAV99” Circuits In One Package
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Top View
DFN2020B-6
Bottom View
BAV99BRLP
SURFACE MOUNT SWITCHING DIODE ARRAY
Mechanical Data
• Case: DFN2020B-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: NiPdAu over Copper leadframe (Lead Free Plating).
Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram
• Weight: 0.006 grams (approximate)
C2
C1
A2
AC2
Pin 1 = A1 (anode 1, right below the
notch indication)
Pin 2 = C1 (cathode 1)
Pin 3 = AC2 (internally connected to
rectangular pad)
Pin 4 = A2 (anode 2)
Pin 5 = C2 (cathode 2)
Pin 6 = AC1 (internally connected to
the pad with a notch)
AC1
654
123
A1
Top View
Internal Schematic
Ordering Information (Note 3)
Part Number Case Packaging
BAV99BRLP-7 DFN2020B-6 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
BAV99BRLP
Document number: DS35317 Rev. 4 - 2
CK = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
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© Diodes Incorporated
July 2011
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
NEW PRODUCT
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
V
T
V
V
RRM
V
RWM
V
R(RMS
I
FM
I
FSM
P
R
, T
J
RM
R
D
JA
STG
BAV99BRLP
100 V
75 V
53 V
300 mA
3.0
2.0
A
0.5
500 mW
250
-65 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes: 4. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout.
5. Short duration pulse test used to minimize self-heating effect.
V
R
V
F
I
⎯
R
C
T
t
⎯
rr
75
⎯
⎯
⎯
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0 pF
4.0 ns
V
IR = 2.5μA
I
F
I
F
V
I
F
I
F
V
μA
μA
μA
nA
R
V
R
V
R
V
R
VR = 0, f = 1.0MHz
= IR = 10mA,
I
F
I
rr
= 1.0mA
= 10mA
= 50mA
= 150mA
= 75V
= 75V, TJ = 150°C
= 20V, TJ = 150°C
= 20V
= 0.1 x IR, RL = 100Ω
BAV99BRLP
Document number: DS35317 Rev. 4 - 2
2 of 4
www.diodes.com
July 2011
© Diodes Incorporated